FR2366695A1 - Procede permettant de reparer les dommages causes par les radiations aux dispositifs mis - Google Patents
Procede permettant de reparer les dommages causes par les radiations aux dispositifs misInfo
- Publication number
- FR2366695A1 FR2366695A1 FR7705186A FR7705186A FR2366695A1 FR 2366695 A1 FR2366695 A1 FR 2366695A1 FR 7705186 A FR7705186 A FR 7705186A FR 7705186 A FR7705186 A FR 7705186A FR 2366695 A1 FR2366695 A1 FR 2366695A1
- Authority
- FR
- France
- Prior art keywords
- devices
- radiation
- procedure
- damage caused
- repairing damage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title abstract 2
- 230000005855 radiation Effects 0.000 title abstract 2
- 239000003990 capacitor Substances 0.000 abstract 1
- 230000005669 field effect Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 230000007935 neutral effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/326—Application of electric currents or fields, e.g. for electroforming
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/91—Controlling charging state at semiconductor-insulator interface
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Non-Volatile Memory (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/681,368 US4013485A (en) | 1976-04-29 | 1976-04-29 | Process for eliminating undesirable charge centers in MIS devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2366695A1 true FR2366695A1 (fr) | 1978-04-28 |
| FR2366695B1 FR2366695B1 (enExample) | 1980-12-19 |
Family
ID=24734986
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7705186A Granted FR2366695A1 (fr) | 1976-04-29 | 1977-02-18 | Procede permettant de reparer les dommages causes par les radiations aux dispositifs mis |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4013485A (enExample) |
| JP (1) | JPS52132680A (enExample) |
| DE (1) | DE2715982A1 (enExample) |
| FR (1) | FR2366695A1 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4113514A (en) * | 1978-01-16 | 1978-09-12 | Rca Corporation | Method of passivating a semiconductor device by treatment with atomic hydrogen |
| US4224084A (en) * | 1979-04-16 | 1980-09-23 | Rca Corporation | Method and structure for passivating a semiconductor device |
| US4303455A (en) * | 1980-03-14 | 1981-12-01 | Rockwell International Corporation | Low temperature microwave annealing of semiconductor devices |
| JPH0669027B2 (ja) * | 1983-02-21 | 1994-08-31 | 株式会社日立製作所 | 半導体ウエハの薄膜形成方法 |
| GB2140202A (en) * | 1983-05-16 | 1984-11-21 | Philips Electronic Associated | Methods of manufacturing semiconductor devices |
| DE3725346A1 (de) * | 1987-07-30 | 1989-02-09 | Nukem Gmbh | Verfahren zur wiederverwendung von silizium-basismaterial einer metall-isolator-halbleiter-(mis)-inversionsschicht-solarzelle |
| JPH01212445A (ja) * | 1988-02-19 | 1989-08-25 | Nippon Telegr & Teleph Corp <Ntt> | ヘテロ接合界面電荷補償方法 |
| US7067861B1 (en) | 1998-11-25 | 2006-06-27 | Micron Technology, Inc. | Device and method for protecting against oxidation of a conductive layer in said device |
| US6303972B1 (en) * | 1998-11-25 | 2001-10-16 | Micron Technology, Inc. | Device including a conductive layer protected against oxidation |
| US7053029B2 (en) * | 2002-03-27 | 2006-05-30 | Kimberly-Clark Worldwide, Inc. | Use indicating soap |
| US7135423B2 (en) | 2002-05-09 | 2006-11-14 | Varian Semiconductor Equipment Associates, Inc | Methods for forming low resistivity, ultrashallow junctions with low damage |
| US7402815B2 (en) * | 2003-10-22 | 2008-07-22 | Koninklijke Philips Electronics N.V. | Method and apparatus for reversing performance degradation in semi-conductor detectors |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3533857A (en) * | 1967-11-29 | 1970-10-13 | Hughes Aircraft Co | Method of restoring crystals damaged by irradiation |
-
1976
- 1976-04-29 US US05/681,368 patent/US4013485A/en not_active Expired - Lifetime
-
1977
- 1977-02-18 FR FR7705186A patent/FR2366695A1/fr active Granted
- 1977-04-01 JP JP3626977A patent/JPS52132680A/ja active Pending
- 1977-04-09 DE DE19772715982 patent/DE2715982A1/de not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| FR2366695B1 (enExample) | 1980-12-19 |
| JPS52132680A (en) | 1977-11-07 |
| US4013485A (en) | 1977-03-22 |
| DE2715982A1 (de) | 1977-11-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |