JPS52132680A - Method of restoring electric characteristics of semiconductor structure - Google Patents

Method of restoring electric characteristics of semiconductor structure

Info

Publication number
JPS52132680A
JPS52132680A JP3626977A JP3626977A JPS52132680A JP S52132680 A JPS52132680 A JP S52132680A JP 3626977 A JP3626977 A JP 3626977A JP 3626977 A JP3626977 A JP 3626977A JP S52132680 A JPS52132680 A JP S52132680A
Authority
JP
Japan
Prior art keywords
semiconductor structure
electric characteristics
restoring electric
restoring
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3626977A
Other languages
English (en)
Japanese (ja)
Inventor
Pin Maa Tsuo
Shio Rien Maa Uiriamu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS52132680A publication Critical patent/JPS52132680A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/326—Application of electric currents or fields, e.g. for electroforming
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/91—Controlling charging state at semiconductor-insulator interface

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP3626977A 1976-04-29 1977-04-01 Method of restoring electric characteristics of semiconductor structure Pending JPS52132680A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/681,368 US4013485A (en) 1976-04-29 1976-04-29 Process for eliminating undesirable charge centers in MIS devices

Publications (1)

Publication Number Publication Date
JPS52132680A true JPS52132680A (en) 1977-11-07

Family

ID=24734986

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3626977A Pending JPS52132680A (en) 1976-04-29 1977-04-01 Method of restoring electric characteristics of semiconductor structure

Country Status (4)

Country Link
US (1) US4013485A (enExample)
JP (1) JPS52132680A (enExample)
DE (1) DE2715982A1 (enExample)
FR (1) FR2366695A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59152618A (ja) * 1983-02-21 1984-08-31 Hitachi Ltd 加熱処理方法およびその装置
JPH01212445A (ja) * 1988-02-19 1989-08-25 Nippon Telegr & Teleph Corp <Ntt> ヘテロ接合界面電荷補償方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4113514A (en) * 1978-01-16 1978-09-12 Rca Corporation Method of passivating a semiconductor device by treatment with atomic hydrogen
US4224084A (en) * 1979-04-16 1980-09-23 Rca Corporation Method and structure for passivating a semiconductor device
US4303455A (en) * 1980-03-14 1981-12-01 Rockwell International Corporation Low temperature microwave annealing of semiconductor devices
GB2140202A (en) * 1983-05-16 1984-11-21 Philips Electronic Associated Methods of manufacturing semiconductor devices
DE3725346A1 (de) * 1987-07-30 1989-02-09 Nukem Gmbh Verfahren zur wiederverwendung von silizium-basismaterial einer metall-isolator-halbleiter-(mis)-inversionsschicht-solarzelle
US7067861B1 (en) 1998-11-25 2006-06-27 Micron Technology, Inc. Device and method for protecting against oxidation of a conductive layer in said device
US6303972B1 (en) * 1998-11-25 2001-10-16 Micron Technology, Inc. Device including a conductive layer protected against oxidation
US7053029B2 (en) * 2002-03-27 2006-05-30 Kimberly-Clark Worldwide, Inc. Use indicating soap
US7135423B2 (en) 2002-05-09 2006-11-14 Varian Semiconductor Equipment Associates, Inc Methods for forming low resistivity, ultrashallow junctions with low damage
US7402815B2 (en) * 2003-10-22 2008-07-22 Koninklijke Philips Electronics N.V. Method and apparatus for reversing performance degradation in semi-conductor detectors

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3533857A (en) * 1967-11-29 1970-10-13 Hughes Aircraft Co Method of restoring crystals damaged by irradiation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59152618A (ja) * 1983-02-21 1984-08-31 Hitachi Ltd 加熱処理方法およびその装置
JPH01212445A (ja) * 1988-02-19 1989-08-25 Nippon Telegr & Teleph Corp <Ntt> ヘテロ接合界面電荷補償方法

Also Published As

Publication number Publication date
FR2366695B1 (enExample) 1980-12-19
FR2366695A1 (fr) 1978-04-28
US4013485A (en) 1977-03-22
DE2715982A1 (de) 1977-11-17

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