FR2080967A1 - Diffusion-doped semiconductors - Google Patents

Diffusion-doped semiconductors

Info

Publication number
FR2080967A1
FR2080967A1 FR7103654A FR7103654A FR2080967A1 FR 2080967 A1 FR2080967 A1 FR 2080967A1 FR 7103654 A FR7103654 A FR 7103654A FR 7103654 A FR7103654 A FR 7103654A FR 2080967 A1 FR2080967 A1 FR 2080967A1
Authority
FR
France
Prior art keywords
diffusion
temp
doped semiconductors
working
doping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7103654A
Other languages
French (fr)
Other versions
FR2080967B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2080967A1 publication Critical patent/FR2080967A1/en
Application granted granted Critical
Publication of FR2080967B1 publication Critical patent/FR2080967B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Zones having a practically constant defect concentration across their thickness and a steep gradient at the zone junctions are formed in a semiconductor body by doping it with impurities in an amount acceptable at the diffusion temp. but exceeding the solubility limit at the working temp. so that the excess impurity amount becomes electrically inactive at the working temp. This method is especially suitable for the manufacture of transistor for computers, which must have a high frequency limit and sufficient amplification.
FR7103654A 1970-02-09 1971-01-27 Diffusion-doped semiconductors Granted FR2080967A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US975470A 1970-02-09 1970-02-09

Publications (2)

Publication Number Publication Date
FR2080967A1 true FR2080967A1 (en) 1971-11-26
FR2080967B1 FR2080967B1 (en) 1976-05-28

Family

ID=21739503

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7103654A Granted FR2080967A1 (en) 1970-02-09 1971-01-27 Diffusion-doped semiconductors

Country Status (3)

Country Link
JP (1) JPS4840298B1 (en)
DE (1) DE2102865A1 (en)
FR (1) FR2080967A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51126096U (en) * 1975-04-07 1976-10-12
JPS6086325U (en) * 1983-11-22 1985-06-14 ピジヨン株式会社 plug-in toilet bowl

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1377877A (en) * 1962-12-20 1964-11-06 Westinghouse Electric Corp Semiconductor switching device
FR1551367A (en) * 1966-12-30 1968-12-27

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1377877A (en) * 1962-12-20 1964-11-06 Westinghouse Electric Corp Semiconductor switching device
FR1551367A (en) * 1966-12-30 1968-12-27

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
(REVUE INTERNATIONALE"SOLID-STATE ELECTRONICS"VOLUME 10,AOUT 1967,"GLEICHZEITIGE DIFFUSION VON GA UND AS IN SILIZIUM AUS EINER CAAS-QUELLE"W.MONCH,PAGES 745-751. *
*REVUE JAPONAISE"SUPPLEMENT TO THE JOURNAL OF THE JAPAN SOCIETY OF APPLIED PHYSICS"VOLUME 39,1970) *
GA UND AS IN SILIZIUM AUS EINER CAAS-QUELLE"W.MONCH,PAGES 745-751. *
REVUE INTERNATIONALE"SOLID-STATE ELECTRONICS"VOLUME 10,AOUT 1967,"GLEICHZEITIGE DIFFUSION VON *
REVUE JAPONAISE"SUPPLEMENT *
TO THE JOURNAL OF THE JAPAN SOCIETY OF APPLIED PHYSICS"VOLUME 39,1970) *

Also Published As

Publication number Publication date
DE2102865A1 (en) 1971-08-26
FR2080967B1 (en) 1976-05-28
JPS4840298B1 (en) 1973-11-29

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Legal Events

Date Code Title Description
ST Notification of lapse