FR2358058A1 - Dispositif semi-conducteur et circuit analogique constitue par le dispositif semi-conducteur - Google Patents

Dispositif semi-conducteur et circuit analogique constitue par le dispositif semi-conducteur

Info

Publication number
FR2358058A1
FR2358058A1 FR7708854A FR7708854A FR2358058A1 FR 2358058 A1 FR2358058 A1 FR 2358058A1 FR 7708854 A FR7708854 A FR 7708854A FR 7708854 A FR7708854 A FR 7708854A FR 2358058 A1 FR2358058 A1 FR 2358058A1
Authority
FR
France
Prior art keywords
region
type
semiconductor device
substrate
circuit constituted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7708854A
Other languages
English (en)
Other versions
FR2358058B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP50093763A external-priority patent/JPS5217778A/ja
Priority claimed from JP50093759A external-priority patent/JPS5217774A/ja
Priority claimed from JP50093760A external-priority patent/JPS5217775A/ja
Priority claimed from JP50093761A external-priority patent/JPS5217776A/ja
Priority claimed from JP50095637A external-priority patent/JPS5834940B2/ja
Priority claimed from JP50096478A external-priority patent/JPS5219985A/ja
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of FR2358058A1 publication Critical patent/FR2358058A1/fr
Application granted granted Critical
Publication of FR2358058B1 publication Critical patent/FR2358058B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/084—Diode-transistor logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H01L27/0237—Integrated injection logic structures [I2L] using vertical injector structures
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/091—Integrated injection logic or merged transistor logic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/087—I2L integrated injection logic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/088—J-Fet, i.e. junction field effect transistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/139—Schottky barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

L'invention concerne un dispositif semi-conducteur et un circuit logique constitué par ce dispositif. Il comporte un substrat du type P et une région noyée du type N dans le substrat; une région isolante du type N, entre la surface du substrat et la région noyée, délimite une région isolée du type P. Une première région du type N est formée dans la région isolée, sans être en contact avec la région isolante ni avec la région noyée, et une seconde région du type P est diffusée dans la première région du type N. Un élément logique est ainsi constitué avec un premier transistor PNP vertical et un second transistor NPN vertical. L'invention s'applique notamment à la réalisation de circuits logiques intégrés de forte densité, de faible consommation et fonctionnant dans une large plage de fréquences.
FR7708854A 1975-07-31 1977-03-24 Dispositif semi-conducteur et circuit analogique constitue par le dispositif semi-conducteur Granted FR2358058A1 (fr)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP50093763A JPS5217778A (en) 1975-07-31 1975-07-31 Semi-conductor device
JP50093759A JPS5217774A (en) 1975-07-31 1975-07-31 Semi-conductor device
JP50093760A JPS5217775A (en) 1975-07-31 1975-07-31 Semiconductor device
JP50093761A JPS5217776A (en) 1975-07-31 1975-07-31 Semi-conductor device
JP50095637A JPS5834940B2 (ja) 1975-08-06 1975-08-06 ハンドウタイソウチ
JP50096478A JPS5219985A (en) 1975-08-08 1975-08-08 Semiconductor device

Publications (2)

Publication Number Publication Date
FR2358058A1 true FR2358058A1 (fr) 1978-02-03
FR2358058B1 FR2358058B1 (fr) 1980-08-08

Family

ID=27551909

Family Applications (2)

Application Number Title Priority Date Filing Date
FR7623426A Granted FR2339957A1 (fr) 1975-07-31 1976-07-30 Dispositif semi-conducteur et circuit logique constitue par le dispositif semi-conducteur
FR7708854A Granted FR2358058A1 (fr) 1975-07-31 1977-03-24 Dispositif semi-conducteur et circuit analogique constitue par le dispositif semi-conducteur

Family Applications Before (1)

Application Number Title Priority Date Filing Date
FR7623426A Granted FR2339957A1 (fr) 1975-07-31 1976-07-30 Dispositif semi-conducteur et circuit logique constitue par le dispositif semi-conducteur

Country Status (4)

Country Link
US (1) US4260906A (fr)
DE (1) DE2634304C2 (fr)
FR (2) FR2339957A1 (fr)
GB (1) GB1558281A (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1558281A (en) * 1975-07-31 1979-12-19 Tokyo Shibaura Electric Co Semiconductor device and logic circuit constituted by the semiconductor device
FR2375722A1 (fr) * 1976-12-21 1978-07-21 Thomson Csf Element logique a faible consommation
US4204130A (en) * 1978-03-29 1980-05-20 International Business Machines Corporation Multicollector transistor logic circuit
DE3020609C2 (de) * 1979-05-31 1985-11-07 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Verfahren zum Herstellen einer integrierten Schaltung mit wenigstens einem I↑2↑L-Element
US4371792A (en) * 1980-07-24 1983-02-01 National Semiconductor Corporation High gain composite transistor
US4463369A (en) * 1981-06-15 1984-07-31 Rca Integrated circuit overload protection device
JPS58168255A (ja) * 1982-03-30 1983-10-04 Fujitsu Ltd 半導体装置
US5166094A (en) * 1984-09-14 1992-11-24 Fairchild Camera & Instrument Corp. Method of fabricating a base-coupled transistor logic
US4947230A (en) * 1984-09-14 1990-08-07 Fairchild Camera & Instrument Corp. Base-coupled transistor logic
IT1230025B (it) * 1988-10-28 1991-09-24 Sgs Thomson Microelectronics Dispositivo darlington con transistore di estrazione ed emettitore ultraleggero e relativo procedimento di fabbricazione
US4979001A (en) * 1989-06-30 1990-12-18 Micrel Incorporated Hidden zener diode structure in configurable integrated circuit

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3427511A (en) * 1965-03-17 1969-02-11 Rca Corp High frequency transistor structure with two-conductivity emitters
FR1504781A (fr) * 1966-10-28 1967-12-08 Csf Nouveau transistor pnp pour circuits intégrés
US3474308A (en) * 1966-12-13 1969-10-21 Texas Instruments Inc Monolithic circuits having matched complementary transistors,sub-epitaxial and surface resistors,and n and p channel field effect transistors
NL162511C (nl) * 1969-01-11 1980-05-16 Philips Nv Geintegreerde halfgeleiderschakeling met een laterale transistor en werkwijze voor het vervaardigen van de geintegreerde halfgeleiderschakeling.
DE2212168C2 (de) * 1972-03-14 1982-10-21 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierte Halbleiteranordnung
DE2262297C2 (de) * 1972-12-20 1985-11-28 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierbare, logisch verknüpfbare Halbleiterschaltungsanordnung mit I↑2↑L-Aufbau
JPS5017180A (fr) * 1973-06-13 1975-02-22
GB1558281A (en) * 1975-07-31 1979-12-19 Tokyo Shibaura Electric Co Semiconductor device and logic circuit constituted by the semiconductor device

Also Published As

Publication number Publication date
DE2634304C2 (de) 1981-11-26
FR2339957B1 (fr) 1982-03-19
FR2358058B1 (fr) 1980-08-08
GB1558281A (en) 1979-12-19
US4260906A (en) 1981-04-07
FR2339957A1 (fr) 1977-08-26
DE2634304A1 (de) 1977-02-10

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