IT1230025B - Dispositivo darlington con transistore di estrazione ed emettitore ultraleggero e relativo procedimento di fabbricazione - Google Patents

Dispositivo darlington con transistore di estrazione ed emettitore ultraleggero e relativo procedimento di fabbricazione

Info

Publication number
IT1230025B
IT1230025B IT8806621A IT662188A IT1230025B IT 1230025 B IT1230025 B IT 1230025B IT 8806621 A IT8806621 A IT 8806621A IT 662188 A IT662188 A IT 662188A IT 1230025 B IT1230025 B IT 1230025B
Authority
IT
Italy
Prior art keywords
ultralight
emitter
manufacturing procedure
related manufacturing
extraction transistor
Prior art date
Application number
IT8806621A
Other languages
English (en)
Other versions
IT8806621A0 (it
Inventor
Ballaro' David
Patti Alfonso
Ferla Giuseppe
Frisina Ferruccio
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Priority to IT8806621A priority Critical patent/IT1230025B/it
Publication of IT8806621A0 publication Critical patent/IT8806621A0/it
Priority to US07/425,981 priority patent/US5083182A/en
Priority to DE68918390T priority patent/DE68918390T2/de
Priority to EP89202707A priority patent/EP0366213B1/en
Priority to JP1280003A priority patent/JPH02170568A/ja
Application granted granted Critical
Publication of IT1230025B publication Critical patent/IT1230025B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
IT8806621A 1988-10-28 1988-10-28 Dispositivo darlington con transistore di estrazione ed emettitore ultraleggero e relativo procedimento di fabbricazione IT1230025B (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IT8806621A IT1230025B (it) 1988-10-28 1988-10-28 Dispositivo darlington con transistore di estrazione ed emettitore ultraleggero e relativo procedimento di fabbricazione
US07/425,981 US5083182A (en) 1988-10-28 1989-10-24 Darlington device with an ultra-lightweight emitter speed-up transistor
DE68918390T DE68918390T2 (de) 1988-10-28 1989-10-26 Darlingtonschaltungsanordnung mit einem Beschleunigungstransistor, der einen ultraleichten Emitter aufweist, und ein zugehöriges Herstellungsverfahren.
EP89202707A EP0366213B1 (en) 1988-10-28 1989-10-26 Darlington device with an ultra-light weight emitter speed-up transistor, and relative manufacturing method
JP1280003A JPH02170568A (ja) 1988-10-28 1989-10-30 ダーリントン装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8806621A IT1230025B (it) 1988-10-28 1988-10-28 Dispositivo darlington con transistore di estrazione ed emettitore ultraleggero e relativo procedimento di fabbricazione

Publications (2)

Publication Number Publication Date
IT8806621A0 IT8806621A0 (it) 1988-10-28
IT1230025B true IT1230025B (it) 1991-09-24

Family

ID=11121535

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8806621A IT1230025B (it) 1988-10-28 1988-10-28 Dispositivo darlington con transistore di estrazione ed emettitore ultraleggero e relativo procedimento di fabbricazione

Country Status (5)

Country Link
US (1) US5083182A (it)
EP (1) EP0366213B1 (it)
JP (1) JPH02170568A (it)
DE (1) DE68918390T2 (it)
IT (1) IT1230025B (it)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012085677A1 (en) * 2010-12-20 2012-06-28 Diodes Zetex Semiconductors Limited Complementary darlington emitter follower with improved switching speed and improved cross-over control and increased output voltage

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1558281A (en) * 1975-07-31 1979-12-19 Tokyo Shibaura Electric Co Semiconductor device and logic circuit constituted by the semiconductor device
FR2377706A1 (fr) * 1977-01-12 1978-08-11 Radiotechnique Compelec Dispositif semi-conducteur integre du type darlington et son procede de fabrication
US4159915A (en) * 1977-10-25 1979-07-03 International Business Machines Corporation Method for fabrication vertical NPN and PNP structures utilizing ion-implantation
JPS6070756A (ja) * 1983-09-26 1985-04-22 Nec Corp モノリシツクダ−リントントランジスタ
JPS62274624A (ja) * 1986-05-22 1987-11-28 Mitsubishi Electric Corp 半導体装置の製造方法
JPS63157462A (ja) * 1986-12-20 1988-06-30 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
DE68918390T2 (de) 1995-03-02
US5083182A (en) 1992-01-21
JPH02170568A (ja) 1990-07-02
EP0366213B1 (en) 1994-09-21
IT8806621A0 (it) 1988-10-28
DE68918390D1 (de) 1994-10-27
EP0366213A1 (en) 1990-05-02

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Effective date: 19971030