FR2356595A1 - Procede de fabrication de bioxyde de silicium amorphe exempt d'ions metalliques, susceptible d'etre utilise comme agent de polissage - Google Patents

Procede de fabrication de bioxyde de silicium amorphe exempt d'ions metalliques, susceptible d'etre utilise comme agent de polissage

Info

Publication number
FR2356595A1
FR2356595A1 FR7717616A FR7717616A FR2356595A1 FR 2356595 A1 FR2356595 A1 FR 2356595A1 FR 7717616 A FR7717616 A FR 7717616A FR 7717616 A FR7717616 A FR 7717616A FR 2356595 A1 FR2356595 A1 FR 2356595A1
Authority
FR
France
Prior art keywords
manufacture
free
polishing agent
metal ion
water
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7717616A
Other languages
English (en)
Other versions
FR2356595B1 (fr
Inventor
Friedrich W Schwerdt
Hans-Heinz Steinbeck
Friedrich C Brunner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2356595A1 publication Critical patent/FR2356595A1/fr
Application granted granted Critical
Publication of FR2356595B1 publication Critical patent/FR2356595B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Silicon Compounds (AREA)

Abstract

Procédé de fabrication de bioxyde de silicium amorphe exempt d'ions métalliques, susceptible d'être utilisé comme agent de polissage. Ce procédé est caractérisé par les étapes suivantes : préparation d'un mélange contenant une amine organique en excès, un hydroxybenzène, de l'eau et un silicium très pur que l'on fait bouillir sous reflux avec des bulles d'air purifié, rinçage du précipité de bioxyde de silicium par de l'eau et de l'alcool et séchage en utilisant un procédé connu. Application à la fabrication de dispositifs à semi-conducteurs et plus particulièrement au polissage des tranches.
FR7717616A 1976-07-02 1977-06-02 Procede de fabrication de bioxyde de silicium amorphe exempt d'ions metalliques, susceptible d'etre utilise comme agent de polissage Granted FR2356595A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2629709A DE2629709C2 (de) 1976-07-02 1976-07-02 Verfahren zur Herstellung eines metallionenfreien amorphen Siliciumdioxids und daraus hergestelltes Poliermittel zum mechanischen Polieren von Halbleiteroberflächen

Publications (2)

Publication Number Publication Date
FR2356595A1 true FR2356595A1 (fr) 1978-01-27
FR2356595B1 FR2356595B1 (fr) 1979-03-09

Family

ID=5982012

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7717616A Granted FR2356595A1 (fr) 1976-07-02 1977-06-02 Procede de fabrication de bioxyde de silicium amorphe exempt d'ions metalliques, susceptible d'etre utilise comme agent de polissage

Country Status (7)

Country Link
US (1) US4117093A (fr)
JP (1) JPS535098A (fr)
CA (1) CA1106143A (fr)
DE (1) DE2629709C2 (fr)
FR (1) FR2356595A1 (fr)
GB (1) GB1540798A (fr)
IT (1) IT1114887B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0137289A2 (fr) * 1983-08-31 1985-04-17 E.I. Du Pont De Nemours And Company Procédé pour la préparation de polymorphe de silice à partir de silicium

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4421527A (en) * 1977-12-20 1983-12-20 J. M. Huber Corporation High fluoride compatibility dentifrice abrasives and compositions
US4169337A (en) * 1978-03-30 1979-10-02 Nalco Chemical Company Process for polishing semi-conductor materials
AT391122B (de) * 1978-05-24 1990-08-27 Grace W R & Co Verfahren zur herstellung eines siliciumdioxidhydrogels
DE2909930C2 (de) * 1979-03-14 1984-05-10 Basf Ag, 6700 Ludwigshafen Neue kristalline SiO↓2↓-Modifikation und Verfahren zu ihrer Herstellung
JPS5845050B2 (ja) * 1979-12-28 1983-10-06 富士通株式会社 バス集中監視方式
JPS5696310A (en) * 1979-12-28 1981-08-04 Fujitsu Ltd Centralized control system of bus
JPS6244855A (ja) * 1985-08-22 1987-02-26 Panafacom Ltd メモリ・アクセス制御方式
JPH0686144U (ja) * 1991-10-01 1994-12-13 株式会社ピーエフユー メモリ・アクセス制御装置
US5391258A (en) * 1993-05-26 1995-02-21 Rodel, Inc. Compositions and methods for polishing
FR2761629B1 (fr) * 1997-04-07 1999-06-18 Hoechst France Nouveau procede de polissage mecano-chimique de couches de materiaux semi-conducteurs a base de polysilicium ou d'oxyde de silicium dope
US6322600B1 (en) 1997-04-23 2001-11-27 Advanced Technology Materials, Inc. Planarization compositions and methods for removing interlayer dielectric films
DE10060343A1 (de) * 2000-12-04 2002-06-06 Bayer Ag Polierslurry für das chemisch-mechanische Polieren von Metall- und Dielektrikastrukturen
US7001827B2 (en) * 2003-04-15 2006-02-21 International Business Machines Corporation Semiconductor wafer front side protection
JP5972660B2 (ja) * 2012-03-28 2016-08-17 株式会社アドマテックス コロイドシリカの製造方法及びｃｍｐ用スラリーの製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2744001A (en) * 1950-09-08 1956-05-01 Rare Earths Inc Polishing material and method of making same
NL106490C (fr) * 1955-12-22
US3208823A (en) * 1958-10-20 1965-09-28 Philadelphia Quartz Co Finely divided silica product and its method of preparation
US3715842A (en) * 1970-07-02 1973-02-13 Tizon Chem Corp Silica polishing compositions having a reduced tendency to scratch silicon and germanium surfaces
US3922393A (en) * 1974-07-02 1975-11-25 Du Pont Process for polishing silicon and germanium semiconductor materials

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0137289A2 (fr) * 1983-08-31 1985-04-17 E.I. Du Pont De Nemours And Company Procédé pour la préparation de polymorphe de silice à partir de silicium
EP0137289A3 (fr) * 1983-08-31 1988-07-27 E.I. Du Pont De Nemours And Company Procédé pour la préparation de polymorphe de silice à partir de silicium

Also Published As

Publication number Publication date
JPS5551845B2 (fr) 1980-12-26
DE2629709A1 (de) 1978-01-05
FR2356595B1 (fr) 1979-03-09
JPS535098A (en) 1978-01-18
CA1106143A (fr) 1981-08-04
DE2629709C2 (de) 1982-06-03
IT1114887B (it) 1986-01-27
GB1540798A (en) 1979-02-14
US4117093A (en) 1978-09-26

Similar Documents

Publication Publication Date Title
FR2356595A1 (fr) Procede de fabrication de bioxyde de silicium amorphe exempt d'ions metalliques, susceptible d'etre utilise comme agent de polissage
US3940506A (en) Selective plasma etching and deposition
JPS6039176A (ja) エッチング剤組成物
KR960005828A (ko) 연마제 및 그것을 이용한 연마 방법
KR930008971A (ko) 반도체 장치의 층간 절연막 형성방법
US20190040317A1 (en) WET ETCHING COMPOSITION FOR SUBSTRATE HAVING SiN LAYER AND Si LAYER AND WET ETCHING METHOD USING SAME
KR860700269A (ko) 개선된 실리콘 옥시니트리드 재료의 증착방법
JP2000058505A (ja) シリコンからのＳｉＯ２／金属の気相除去
Bansal et al. Polarographic and optical pulse radiolysis study of the radicals formed by hydroxyl radical attack on imidazole and related compounds in aqueous solutions
JP2692707B2 (ja) トリフルオロ酢酸及びその誘導体を使用するプラズマエッチング法
US2740699A (en) Surface processing
BR8203729A (pt) Processo para a fabricacao de epoxidos
FR2393006A1 (fr) Procede de purification de l'urokinase
Saguinsin et al. The chemistry of aqueous nitrogen trichloride
Maruyama et al. Relative Rate of Hydrogen Abstraction by the Triplet State of Phenanthraquinone
CA1080442A (fr) Elimination de l'hydrogene arsenie
JPH03268327A (ja) 窒化シリコン膜のエッチング方法
US2935781A (en) Manufacture of germanium translators
GB1573208A (en) Surface treating agent adapted for intermediate products of a semiconductor device
IT994153B (it) Mordenzatura di semiconduttori del gruppo iii v
WO2000067312A1 (fr) Procede d'elimination de defauts de corps en silicium par attaque selective
FR2444692A1 (fr) Procede pour attaquer la surface d'un substrat de caprolactame en vue de la formation d'un depot chimique
Vankerckhoven et al. Effect of additives on the removal efficiency of photoresist by ozone/DI-water processes: Experimental study
JPH04114428A (ja) 洗浄法
RU2495512C2 (ru) Способ очистки поверхности полупроводниковых пластин

Legal Events

Date Code Title Description
ST Notification of lapse