FR2316625A1 - Procede d'obtention d'image photoresistante negative - Google Patents
Procede d'obtention d'image photoresistante negativeInfo
- Publication number
- FR2316625A1 FR2316625A1 FR7613472A FR7613472A FR2316625A1 FR 2316625 A1 FR2316625 A1 FR 2316625A1 FR 7613472 A FR7613472 A FR 7613472A FR 7613472 A FR7613472 A FR 7613472A FR 2316625 A1 FR2316625 A1 FR 2316625A1
- Authority
- FR
- France
- Prior art keywords
- obtaining
- image
- photoresistant
- negative
- negative photoresistant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/085—Photosensitive compositions characterised by adhesion-promoting non-macromolecular additives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2529054A DE2529054C2 (de) | 1975-06-30 | 1975-06-30 | Verfahren zur Herstellung eines zur Vorlage negativen Resistbildes |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2316625A1 true FR2316625A1 (fr) | 1977-01-28 |
FR2316625B1 FR2316625B1 (fr) | 1978-05-19 |
Family
ID=5950258
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7613472A Granted FR2316625A1 (fr) | 1975-06-30 | 1976-04-29 | Procede d'obtention d'image photoresistante negative |
Country Status (6)
Country | Link |
---|---|
US (1) | US4104070A (fr) |
JP (1) | JPS526528A (fr) |
DE (1) | DE2529054C2 (fr) |
FR (1) | FR2316625A1 (fr) |
GB (1) | GB1489167A (fr) |
IT (1) | IT1063565B (fr) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0021719A2 (fr) * | 1979-06-18 | 1981-01-07 | Fujitsu Limited | Procédé pour la fabrication d'images résistantes négatives et images résistantes |
FR2468933A1 (fr) * | 1979-11-05 | 1981-05-08 | Hercules Inc | Compositions photopolymerisables pour photoresists et leurs applications |
EP0037708A2 (fr) * | 1980-04-02 | 1981-10-14 | Hitachi, Ltd. | Méthode pour former un patron |
EP0089041A1 (fr) * | 1982-03-16 | 1983-09-21 | E.I. Du Pont De Nemours And Company | Utilisation d'un élément photopolymérisable travaillant en négatif comme masque pour soudage |
EP0142639A2 (fr) * | 1983-09-27 | 1985-05-29 | International Business Machines Corporation | Procédé pour la formation d'images étroites sur des substrats semi-conducteurs |
EP0195106A1 (fr) * | 1985-03-22 | 1986-09-24 | Ibm Deutschland Gmbh | Procédé pour la fabrication d'un masque par décollement et son emploi |
FR2613848A1 (fr) * | 1987-04-11 | 1988-10-14 | Ciba Geigy Ag | Procede pour realiser des images |
EP0450869A2 (fr) * | 1990-04-03 | 1991-10-09 | Hewlett-Packard Company | Inversion d'image dans un photorésiste négatif pour l'UV lointain |
Families Citing this family (81)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5532088A (en) * | 1978-08-30 | 1980-03-06 | Fuji Photo Film Co Ltd | Photo mask forming method |
US4268602A (en) * | 1978-12-05 | 1981-05-19 | Toray Industries, Ltd. | Photosensitive O-quinone diazide containing composition |
DE2855723C2 (de) * | 1978-12-22 | 1985-11-28 | Ibm Deutschland Gmbh, 7000 Stuttgart | Verfahren zum Herstellen eines Negativmusters einer Vorlage aus einem Positivlack |
JPS5635130A (en) * | 1979-08-31 | 1981-04-07 | Fujitsu Ltd | Resist material and method for forming resist pattern |
JPS5636648A (en) * | 1979-09-03 | 1981-04-09 | Fuji Photo Film Co Ltd | Photosensitive material and pattern forming method using it |
JPS56140345A (en) * | 1980-04-02 | 1981-11-02 | Hitachi Ltd | Formation of pattern |
US4508813A (en) * | 1980-06-16 | 1985-04-02 | Fujitsu Limited | Method for producing negative resist images |
US4377633A (en) * | 1981-08-24 | 1983-03-22 | International Business Machines Corporation | Methods of simultaneous contact and metal lithography patterning |
US4491628A (en) * | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
DE3325023A1 (de) * | 1983-07-11 | 1985-01-24 | Hoechst Ag, 6230 Frankfurt | Verfahren zur herstellung negativer kopien mittels eines materials auf basis von 1,2-chinondiaziden |
DE3325022A1 (de) * | 1983-07-11 | 1985-01-24 | Hoechst Ag, 6230 Frankfurt | Verfahren zur herstellung negativer kopien mittels eines materials auf basis von 1,2-chinondiaziden |
IT1169682B (it) * | 1983-11-08 | 1987-06-03 | I M G Ind Materiali Grafici Sp | Composizione per fotoriproduzioni |
US4584763A (en) * | 1983-12-15 | 1986-04-29 | International Business Machines Corporation | One mask technique for substrate contacting in integrated circuits involving deep dielectric isolation |
US4564584A (en) * | 1983-12-30 | 1986-01-14 | Ibm Corporation | Photoresist lift-off process for fabricating semiconductor devices |
US4567132A (en) * | 1984-03-16 | 1986-01-28 | International Business Machines Corporation | Multi-level resist image reversal lithography process |
US4568631A (en) * | 1984-04-30 | 1986-02-04 | International Business Machines Corporation | Process for delineating photoresist lines at pattern edges only using image reversal composition with diazoquinone |
JPS615357A (ja) * | 1984-06-07 | 1986-01-11 | Fujitsu Ltd | デ−タ処理装置 |
US4702995A (en) * | 1984-08-24 | 1987-10-27 | Nec Corporation | Method of X-ray lithography |
GB2171530B (en) * | 1985-02-27 | 1989-06-28 | Imtec Products Inc | Method of producing reversed photoresist images by vapour diffusion |
US4885232A (en) * | 1985-03-11 | 1989-12-05 | Hoechst Celanese Corporation | High temperature post exposure baking treatment for positive photoresist compositions |
EP0195315B1 (fr) * | 1985-03-11 | 1989-10-25 | Hoechst Celanese Corporation | Procédé pour la fabrication de photoréserves structurées |
US4600683A (en) * | 1985-04-22 | 1986-07-15 | International Business Machines Corp. | Cross-linked polyalkenyl phenol based photoresist compositions |
JPS6235350A (ja) * | 1985-08-07 | 1987-02-16 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 像反転に有用な保存寿命の長いフオトレジスト |
US4931381A (en) * | 1985-08-12 | 1990-06-05 | Hoechst Celanese Corporation | Image reversal negative working O-quinone diazide and cross-linking compound containing photoresist process with thermal curing treatment |
US5256522A (en) * | 1985-08-12 | 1993-10-26 | Hoechst Celanese Corporation | Image reversal negative working O-naphthoquinone diazide and cross-linking compound containing photoresist process with thermal curing |
US5217840A (en) * | 1985-08-12 | 1993-06-08 | Hoechst Celanese Corporation | Image reversal negative working o-quinone diazide and cross-linking compound containing photoresist process with thermal curing treatment and element produced therefrom |
US4912018A (en) * | 1986-02-24 | 1990-03-27 | Hoechst Celanese Corporation | High resolution photoresist based on imide containing polymers |
US4835085A (en) * | 1986-10-17 | 1989-05-30 | Ciba-Geigy Corporation | 1,2-Naphthoquinone diazide sulfonyl ester compound with linking benzotriazole groups and light-sensitive composition with compound |
EP0288533A4 (fr) * | 1986-10-20 | 1989-02-06 | Macdermid Inc | Procede et systeme d'inversion d'image. |
DE3637717A1 (de) * | 1986-11-05 | 1988-05-11 | Hoechst Ag | Lichtempfindliches gemisch, dieses enthaltendes aufzeichnungsmaterial und verfahren zur herstellung von positiven oder negativen reliefkopien unter verwendung dieses materials |
US4869760A (en) * | 1987-01-28 | 1989-09-26 | Kayoh Technical Industry Co., Ltd. | Method for production of metallic sticker |
DE3711264A1 (de) * | 1987-04-03 | 1988-10-13 | Hoechst Ag | Lichtempfindliches gemisch und hieraus hergestelltes lichtempfindliches kopiermaterial |
DE3711263A1 (de) * | 1987-04-03 | 1988-10-13 | Hoechst Ag | Lichtempfindliches gemisch, daraus hergestelltes lichtempfindliches kopiermaterial und verfahren zur herstellung von druckformen |
US4775609A (en) * | 1987-05-18 | 1988-10-04 | Hoescht Celanese Corporation | Image reversal |
DE3716848A1 (de) * | 1987-05-20 | 1988-12-01 | Hoechst Ag | Verfahren zur bebilderung lichtempfindlichen materials |
US4771017A (en) * | 1987-06-23 | 1988-09-13 | Spire Corporation | Patterning process |
DE3725949A1 (de) * | 1987-08-05 | 1989-02-16 | Hoechst Ag | Lichtempfindliches gemisch, daraus hergestelltes lichtempfindliches kopiermaterial und verfahren zur herstellung von negativen reliefkopien |
JPS6478249A (en) * | 1987-09-18 | 1989-03-23 | Fuji Photo Film Co Ltd | Photosensitive material and image forming method |
US4885231A (en) * | 1988-05-06 | 1989-12-05 | Bell Communications Research, Inc. | Phase-shifted gratings by selective image reversal of photoresist |
US5407786A (en) * | 1988-08-09 | 1995-04-18 | Kabushiki Kaisha Toshiba | Method of forming a mask on a semiconductor substrate via photosensitive resin deposition, ammonia treatment and selective silylation |
US5286609A (en) * | 1988-11-01 | 1994-02-15 | Yamatoya & Co., Ltd. | Process for the formation of a negative resist pattern from a composition comprising a diazoquinone compound and an imidazole and having as a heat step the use of a hot water containing spray |
DE3837500A1 (de) * | 1988-11-04 | 1990-05-23 | Hoechst Ag | Neue, strahlungsempfindliche verbindungen, hiermit hergestelltes strahlungsempfindliches gemisch und aufzeichnungsmaterial |
DE3926776A1 (de) * | 1989-08-12 | 1991-02-14 | Hoechst Ag | Substituierte 1,2-naphthochinon-(2)-diazid-4-sulfonsaeuren, verfahren zu ihrer herstellung und ihre verwendung |
DE3926774A1 (de) * | 1989-08-12 | 1991-02-14 | Hoechst Ag | 7-hydroxy-1,2-naphthochinon -(2)-diazid-4-sulfonsaeure oder ihre salze, verfahren zu ihrer herstellung und ihre verwendung |
DE3940911A1 (de) * | 1989-12-12 | 1991-06-13 | Hoechst Ag | Verfahren zur herstellung negativer kopien |
DE4004719A1 (de) * | 1990-02-15 | 1991-08-22 | Hoechst Ag | Strahlungsempfindliches gemisch, hiermit hergestelltes strahlungsempfindliches aufzeichnungsmaterial und verfahren zur herstellung von reliefaufzeichnungen |
US5087547A (en) * | 1990-03-02 | 1992-02-11 | Union Carbide Chemicals & Plastics Technology Corporation | Dual-tone photoresist utilizing diazonaphthoquinone resin and carbodiimide stabilizer |
US5275913A (en) * | 1990-05-08 | 1994-01-04 | Industrial Technology Research Institute | Method for preparing resist patterns utilizing solvent development with subsequent resist pattern transfer, via a photo-hardening liquid adhesive, to a receiver substrate and oxygen reactive ion etching |
JP2544006B2 (ja) * | 1990-06-14 | 1996-10-16 | 株式会社東芝 | 半導体装置の製造方法 |
JPH0480758A (ja) * | 1990-07-23 | 1992-03-13 | Fuji Photo Film Co Ltd | 感光性組成物 |
US5364743A (en) * | 1990-12-21 | 1994-11-15 | Xerox Corporation | Process for fabrication of bubble jet using positive resist image reversal for lift off of passivation layer |
JP3016256B2 (ja) * | 1991-01-11 | 2000-03-06 | 日本ビクター株式会社 | 高密度記録ディスク用スタンパとその製造方法 |
US5240811A (en) * | 1991-04-15 | 1993-08-31 | Ocg Microelectronic Materials, Inc. | Photogenerated polycarbodiimides from poly(tetrazole-5-thiones) and use in the preparation of coatings and deep-UV photoresists |
US5304453A (en) * | 1991-07-11 | 1994-04-19 | Industrial Technology Research Institute | Method for preparing resist patterns through image layer transfer to a receiver substrate, via a photo-hardening organic liquid adhesive, with subsequent oxygen reactive ion etching |
IT1271298B (it) * | 1994-12-20 | 1997-05-27 | Alcatel Italia | Processo fotolitografico per contatto per la realizzazione di linee metalliche su un substrato |
JPH08213304A (ja) * | 1995-02-06 | 1996-08-20 | Toshiba Corp | レジストパタ−ンの形成方法 |
SG60011A1 (en) * | 1995-07-26 | 1999-02-22 | Tdk Corp | Resist pattern of t-shaped cross section its preparation and magnetoresistance thin film element |
EP0825927B1 (fr) | 1996-04-23 | 1999-08-11 | Kodak Polychrome Graphics Company Ltd. | Precurseur de plaque d'impression lithographique et son utilisation pour la generation d' images par la chaleur |
JP2002501669A (ja) | 1996-06-10 | 2002-01-15 | ホログラフィック リソグラフィー システムズ,インコーポレイティド | フォトレジスト中に選択された別個のパターンを記録する干渉リソグラフィーパターンを変調するプロセス |
KR20000016498A (ko) | 1996-06-10 | 2000-03-25 | 다니엘 제이. 설리반 | 생산환경을 위한 홀로그래픽 패터닝방법 및 공구 |
US6007968A (en) * | 1997-10-29 | 1999-12-28 | International Business Machines Corporation | Method for forming features using frequency doubling hybrid resist and device formed thereby |
TW460758B (en) | 1998-05-14 | 2001-10-21 | Holographic Lithography System | A holographic lithography system for generating an interference pattern suitable for selectively exposing a photosensitive material |
US6095882A (en) | 1999-02-12 | 2000-08-01 | Micron Technology, Inc. | Method for forming emitters for field emission displays |
US6303416B1 (en) | 1999-10-07 | 2001-10-16 | International Business Machines Corporation | Method to reduce plasma etch fluting |
US7167615B1 (en) | 1999-11-05 | 2007-01-23 | Board Of Regents, The University Of Texas System | Resonant waveguide-grating filters and sensors and methods for making and using same |
EP1153445B1 (fr) | 1999-11-29 | 2012-05-02 | TPO Displays Corp. | Méthode de fabrication d'un dispositif organique électroluminescent |
US6315916B1 (en) | 2000-05-08 | 2001-11-13 | Pisces-Print Image Sciences, Inc. | Chemical imaging of a lithographic printing plate |
US6691618B2 (en) | 2000-05-08 | 2004-02-17 | Pisces-Print Imaging Sciences, Inc. | Chemical imaging of a lithographic printing plate |
US20040154489A1 (en) * | 2000-05-08 | 2004-08-12 | Deutsch Albert S. | Chemical imaging of a lithographic printing plate |
US20040038152A1 (en) * | 2002-07-15 | 2004-02-26 | Goodin Jonathan W. | Method for making printing plate by inkjet deposition on positive-working media |
US7064824B2 (en) * | 2003-04-13 | 2006-06-20 | Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften E.V. | High spatial resoulution imaging and modification of structures |
JP2006522989A (ja) * | 2003-04-13 | 2006-10-05 | マックス−プランク−ゲゼルシャフト・ツーア・フェルデルング・デア・ヴィセンシャフテン・エー.ファウ. | 高い空間分解能の一定の構造部の製造 |
US7539115B2 (en) * | 2003-04-13 | 2009-05-26 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | Creating a permanent structure with high spatial resolution |
US20040207829A1 (en) * | 2003-04-17 | 2004-10-21 | Asml Netherlands, B.V. | Illuminator controlled tone reversal printing |
US6773869B1 (en) * | 2003-04-24 | 2004-08-10 | Lexmark International, Inc. | Inkjet printhead nozzle plate |
US7112489B1 (en) | 2004-12-03 | 2006-09-26 | Advanced Micro Devices, Inc. | Negative resist or dry develop process for forming middle of line implant layer |
US7241707B2 (en) * | 2005-02-17 | 2007-07-10 | Intel Corporation | Layered films formed by controlled phase segregation |
US20070082432A1 (en) * | 2005-09-06 | 2007-04-12 | Lee Wai M | Variable exposure photolithography |
US20120040288A1 (en) * | 2010-08-11 | 2012-02-16 | Microchem Corp. | Epoxy formulations with controllable photospeed |
EP2835687B1 (fr) | 2013-08-06 | 2017-03-15 | Ams Ag | Procédé de production d'une structure résistante avec paroi latérale dégagée |
US10520813B2 (en) * | 2016-12-15 | 2019-12-31 | Taiwan Semiconductor Manufacturing Co., Ltd | Extreme ultraviolet photoresist with high-efficiency electron transfer |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1342789A (fr) * | 1961-07-28 | 1963-11-15 | Kalle Ag | Procédé de développement avec inversion à l'aide de couches photosensibles renfermant des combinaisons diazoïques |
FR2171724A5 (fr) * | 1972-02-03 | 1973-09-21 | Buckbee Mears Co |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE500222A (fr) * | 1949-07-23 | |||
NL280959A (fr) * | 1961-07-28 | |||
DE1224147B (de) * | 1963-08-23 | 1966-09-01 | Kalle Ag | Verfahren zur Umkehrentwicklung von Diazo-verbindungen enthaltenden Kopierschichten |
US3759711A (en) * | 1970-09-16 | 1973-09-18 | Eastman Kodak Co | Er compositions and elements nitrogen linked apperding quinone diazide light sensitive vinyl polym |
BE789196A (fr) * | 1971-09-25 | 1973-03-22 | Kalle Ag | Matiere a copier photosensible |
US3827908A (en) * | 1972-12-11 | 1974-08-06 | Ibm | Method for improving photoresist adherence |
US3873313A (en) * | 1973-05-21 | 1975-03-25 | Ibm | Process for forming a resist mask |
-
1975
- 1975-06-30 DE DE2529054A patent/DE2529054C2/de not_active Expired
-
1976
- 1976-04-29 FR FR7613472A patent/FR2316625A1/fr active Granted
- 1976-05-03 US US05/682,804 patent/US4104070A/en not_active Expired - Lifetime
- 1976-05-24 GB GB21375/76A patent/GB1489167A/en not_active Expired
- 1976-06-04 IT IT23939/76A patent/IT1063565B/it active
- 1976-06-09 JP JP51066664A patent/JPS526528A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1342789A (fr) * | 1961-07-28 | 1963-11-15 | Kalle Ag | Procédé de développement avec inversion à l'aide de couches photosensibles renfermant des combinaisons diazoïques |
FR2171724A5 (fr) * | 1972-02-03 | 1973-09-21 | Buckbee Mears Co |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0021719A2 (fr) * | 1979-06-18 | 1981-01-07 | Fujitsu Limited | Procédé pour la fabrication d'images résistantes négatives et images résistantes |
EP0021719A3 (en) * | 1979-06-18 | 1981-10-14 | Fujitsu Limited | Method for producing negative resist images, and resist images |
FR2468933A1 (fr) * | 1979-11-05 | 1981-05-08 | Hercules Inc | Compositions photopolymerisables pour photoresists et leurs applications |
EP0037708A2 (fr) * | 1980-04-02 | 1981-10-14 | Hitachi, Ltd. | Méthode pour former un patron |
EP0037708A3 (en) * | 1980-04-02 | 1982-06-02 | Hitachi, Ltd. | Method of forming patterns |
EP0089041A1 (fr) * | 1982-03-16 | 1983-09-21 | E.I. Du Pont De Nemours And Company | Utilisation d'un élément photopolymérisable travaillant en négatif comme masque pour soudage |
EP0142639A2 (fr) * | 1983-09-27 | 1985-05-29 | International Business Machines Corporation | Procédé pour la formation d'images étroites sur des substrats semi-conducteurs |
EP0142639A3 (fr) * | 1983-09-27 | 1989-03-08 | International Business Machines Corporation | Procédé pour la formation d'images étroites sur des substrats semi-conducteurs |
EP0195106A1 (fr) * | 1985-03-22 | 1986-09-24 | Ibm Deutschland Gmbh | Procédé pour la fabrication d'un masque par décollement et son emploi |
FR2613848A1 (fr) * | 1987-04-11 | 1988-10-14 | Ciba Geigy Ag | Procede pour realiser des images |
BE1002863A3 (fr) * | 1987-04-11 | 1991-07-09 | Ciba Geigy | Procede pour realiser des images. |
EP0450869A2 (fr) * | 1990-04-03 | 1991-10-09 | Hewlett-Packard Company | Inversion d'image dans un photorésiste négatif pour l'UV lointain |
EP0450869A3 (en) * | 1990-04-03 | 1992-01-29 | Hewlett-Packard Company | Image reversal in a negative deep ultraviolet photoresist |
Also Published As
Publication number | Publication date |
---|---|
DE2529054C2 (de) | 1982-04-29 |
JPS526528A (en) | 1977-01-19 |
FR2316625B1 (fr) | 1978-05-19 |
US4104070A (en) | 1978-08-01 |
JPS548304B2 (fr) | 1979-04-14 |
GB1489167A (en) | 1977-10-19 |
DE2529054A1 (de) | 1977-06-30 |
IT1063565B (it) | 1985-02-11 |
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