FR2300440A2 - Perfectionnements aux lasers a l'arseniure de gallium a injection - Google Patents

Perfectionnements aux lasers a l'arseniure de gallium a injection

Info

Publication number
FR2300440A2
FR2300440A2 FR7602887A FR7602887A FR2300440A2 FR 2300440 A2 FR2300440 A2 FR 2300440A2 FR 7602887 A FR7602887 A FR 7602887A FR 7602887 A FR7602887 A FR 7602887A FR 2300440 A2 FR2300440 A2 FR 2300440A2
Authority
FR
France
Prior art keywords
gallium arsenide
injection laser
developments
laser developments
arsenide injection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7602887A
Other languages
English (en)
French (fr)
Other versions
FR2300440B2 (enrdf_load_stackoverflow
Inventor
George Horace Brooke Thompson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Standard Electric Corp
Original Assignee
International Standard Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Standard Electric Corp filed Critical International Standard Electric Corp
Publication of FR2300440A2 publication Critical patent/FR2300440A2/fr
Application granted granted Critical
Publication of FR2300440B2 publication Critical patent/FR2300440B2/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/20Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/20Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054Methods of obtaining the confinement
    • H01S5/2059Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
FR7602887A 1975-02-04 1976-02-03 Perfectionnements aux lasers a l'arseniure de gallium a injection Granted FR2300440A2 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB470175A GB1494518A (en) 1975-02-04 1975-02-04 Heterostructure lasers

Publications (2)

Publication Number Publication Date
FR2300440A2 true FR2300440A2 (fr) 1976-09-03
FR2300440B2 FR2300440B2 (enrdf_load_stackoverflow) 1980-11-07

Family

ID=9782183

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7602887A Granted FR2300440A2 (fr) 1975-02-04 1976-02-03 Perfectionnements aux lasers a l'arseniure de gallium a injection

Country Status (4)

Country Link
AU (1) AU501325B2 (enrdf_load_stackoverflow)
BE (1) BE838255R (enrdf_load_stackoverflow)
FR (1) FR2300440A2 (enrdf_load_stackoverflow)
GB (1) GB1494518A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2426348A1 (fr) * 1978-05-20 1979-12-14 Licentia Gmbh Laser a semi-conducteurs et procede de production d'un tel laser

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2127218B (en) * 1982-08-16 1986-05-21 Omron Tateisi Electronics Co Semiconductor laser

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3163562A (en) * 1961-08-10 1964-12-29 Bell Telephone Labor Inc Semiconductor device including differing energy band gap materials
FR2225855A1 (enrdf_load_stackoverflow) * 1973-04-12 1974-11-08 Ibm
FR2299730A1 (fr) * 1975-01-31 1976-08-27 Thomson Csf Diodes electroluminescentes et leur procede de fabrication

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3163562A (en) * 1961-08-10 1964-12-29 Bell Telephone Labor Inc Semiconductor device including differing energy band gap materials
FR2225855A1 (enrdf_load_stackoverflow) * 1973-04-12 1974-11-08 Ibm
FR2299730A1 (fr) * 1975-01-31 1976-08-27 Thomson Csf Diodes electroluminescentes et leur procede de fabrication

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2426348A1 (fr) * 1978-05-20 1979-12-14 Licentia Gmbh Laser a semi-conducteurs et procede de production d'un tel laser

Also Published As

Publication number Publication date
GB1494518A (en) 1977-12-07
AU1083676A (en) 1977-08-11
FR2300440B2 (enrdf_load_stackoverflow) 1980-11-07
AU501325B2 (en) 1979-06-14
BE838255R (fr) 1976-08-04

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