GB1494518A - Heterostructure lasers - Google Patents
Heterostructure lasersInfo
- Publication number
- GB1494518A GB1494518A GB470175A GB470175A GB1494518A GB 1494518 A GB1494518 A GB 1494518A GB 470175 A GB470175 A GB 470175A GB 470175 A GB470175 A GB 470175A GB 1494518 A GB1494518 A GB 1494518A
- Authority
- GB
- United Kingdom
- Prior art keywords
- aluminium
- region
- gaas
- modified
- gaas region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 4
- 229910052782 aluminium Inorganic materials 0.000 abstract 4
- 239000004411 aluminium Substances 0.000 abstract 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB470175A GB1494518A (en) | 1975-02-04 | 1975-02-04 | Heterostructure lasers |
| FR7602887A FR2300440A2 (fr) | 1975-02-04 | 1976-02-03 | Perfectionnements aux lasers a l'arseniure de gallium a injection |
| BE2054803A BE838255R (fr) | 1975-02-04 | 1976-02-04 | Perfectionnements aux lasers a injection |
| AU10836/76A AU501325B2 (en) | 1975-02-04 | 1976-02-04 | Heterostructure laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB470175A GB1494518A (en) | 1975-02-04 | 1975-02-04 | Heterostructure lasers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1494518A true GB1494518A (en) | 1977-12-07 |
Family
ID=9782183
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB470175A Expired GB1494518A (en) | 1975-02-04 | 1975-02-04 | Heterostructure lasers |
Country Status (4)
| Country | Link |
|---|---|
| AU (1) | AU501325B2 (enrdf_load_stackoverflow) |
| BE (1) | BE838255R (enrdf_load_stackoverflow) |
| FR (1) | FR2300440A2 (enrdf_load_stackoverflow) |
| GB (1) | GB1494518A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2127218A (en) * | 1982-08-16 | 1984-04-04 | Omron Tateisi Electronics Co | Semiconductor laser |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2822146C2 (de) * | 1978-05-20 | 1982-11-25 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Heterostruktur-Halbleiterlaserdiode und Verfahren zur Herstellung einer Heterostruktur-Halbleiterdiode |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3163562A (en) * | 1961-08-10 | 1964-12-29 | Bell Telephone Labor Inc | Semiconductor device including differing energy band gap materials |
| US3893044A (en) * | 1973-04-12 | 1975-07-01 | Ibm | Laser device having enclosed laser cavity |
| FR2299730A1 (fr) * | 1975-01-31 | 1976-08-27 | Thomson Csf | Diodes electroluminescentes et leur procede de fabrication |
-
1975
- 1975-02-04 GB GB470175A patent/GB1494518A/en not_active Expired
-
1976
- 1976-02-03 FR FR7602887A patent/FR2300440A2/fr active Granted
- 1976-02-04 BE BE2054803A patent/BE838255R/xx active
- 1976-02-04 AU AU10836/76A patent/AU501325B2/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2127218A (en) * | 1982-08-16 | 1984-04-04 | Omron Tateisi Electronics Co | Semiconductor laser |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2300440B2 (enrdf_load_stackoverflow) | 1980-11-07 |
| FR2300440A2 (fr) | 1976-09-03 |
| AU501325B2 (en) | 1979-06-14 |
| AU1083676A (en) | 1977-08-11 |
| BE838255R (fr) | 1976-08-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1273284A (en) | Improvements in or relating to injection lasers | |
| Alferov et al. | Investigation of the influence of the AlAs-GaAs heterostructure parameters on the laser threshold current and the realization of continuous emission at room temperature | |
| IE35940L (en) | Semiconductor injection lasers | |
| GB940520A (en) | Improvements in semiconductor devices | |
| GB1494518A (en) | Heterostructure lasers | |
| GB1329496A (en) | Inverse transistor | |
| GB1482424A (en) | Electro-luminescent semiconductor diodes | |
| ES354654A1 (es) | Metodo para la difusion de cinc en arseniuro de gelio. | |
| GB1385634A (en) | Gaa1as lasers | |
| GB1383960A (en) | Semiconductor laser | |
| GB1448606A (en) | Semiconductor luminescence diodes | |
| GB985382A (en) | Improvements in or relating to tunnel diodes | |
| GB969530A (en) | A tunnel diode | |
| GB980338A (en) | An improved quantum mechanical tunneling semiconductor device | |
| GB1339564A (en) | Semiconductor iii-v material | |
| Solov'eva et al. | The Electrical Properties of Gallium Arsenide Doped With Isovalent Additions(GaAs: Sb, GaAs: In) | |
| GB1319852A (en) | Semi-conductor device | |
| JPS5366384A (en) | Thyristor | |
| JPS5543883A (en) | High-output photodiode | |
| KR900011085A (ko) | InP/GaInAsp 레이저 다이오드 및 그의 제조방법 | |
| MILLER et al. | Heterojunction materials and characteristics(molecular structure study of gallium arsenides aluminum compounds heterojunction devices)[Final Report, 1 Mar. 1978- 28 Feb. 1979] | |
| GB1526898A (en) | Production of epitaxial layers on monocrystalline substrates | |
| GB1474846A (en) | Semiconductor opto-electronic coupling elements | |
| JPS5227354A (en) | Impurity diffusion method for iii-v group compound semiconductor region | |
| JPS5263088A (en) | Production of gaas light emitting diode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed |