GB1494518A - Heterostructure lasers - Google Patents
Heterostructure lasersInfo
- Publication number
- GB1494518A GB1494518A GB470175A GB470175A GB1494518A GB 1494518 A GB1494518 A GB 1494518A GB 470175 A GB470175 A GB 470175A GB 470175 A GB470175 A GB 470175A GB 1494518 A GB1494518 A GB 1494518A
- Authority
- GB
- United Kingdom
- Prior art keywords
- aluminium
- region
- gaas
- modified
- gaas region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 4
- 229910052782 aluminium Inorganic materials 0.000 abstract 4
- 239000004411 aluminium Substances 0.000 abstract 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB470175A GB1494518A (en) | 1975-02-04 | 1975-02-04 | Heterostructure lasers |
FR7602887A FR2300440A2 (fr) | 1975-02-04 | 1976-02-03 | Perfectionnements aux lasers a l'arseniure de gallium a injection |
BE2054803A BE838255R (fr) | 1975-02-04 | 1976-02-04 | Perfectionnements aux lasers a injection |
AU10836/76A AU501325B2 (en) | 1975-02-04 | 1976-02-04 | Heterostructure laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB470175A GB1494518A (en) | 1975-02-04 | 1975-02-04 | Heterostructure lasers |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1494518A true GB1494518A (en) | 1977-12-07 |
Family
ID=9782183
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB470175A Expired GB1494518A (en) | 1975-02-04 | 1975-02-04 | Heterostructure lasers |
Country Status (4)
Country | Link |
---|---|
AU (1) | AU501325B2 (enrdf_load_stackoverflow) |
BE (1) | BE838255R (enrdf_load_stackoverflow) |
FR (1) | FR2300440A2 (enrdf_load_stackoverflow) |
GB (1) | GB1494518A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2127218A (en) * | 1982-08-16 | 1984-04-04 | Omron Tateisi Electronics Co | Semiconductor laser |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2822146C2 (de) * | 1978-05-20 | 1982-11-25 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Heterostruktur-Halbleiterlaserdiode und Verfahren zur Herstellung einer Heterostruktur-Halbleiterdiode |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3163562A (en) * | 1961-08-10 | 1964-12-29 | Bell Telephone Labor Inc | Semiconductor device including differing energy band gap materials |
US3893044A (en) * | 1973-04-12 | 1975-07-01 | Ibm | Laser device having enclosed laser cavity |
FR2299730A1 (fr) * | 1975-01-31 | 1976-08-27 | Thomson Csf | Diodes electroluminescentes et leur procede de fabrication |
-
1975
- 1975-02-04 GB GB470175A patent/GB1494518A/en not_active Expired
-
1976
- 1976-02-03 FR FR7602887A patent/FR2300440A2/fr active Granted
- 1976-02-04 BE BE2054803A patent/BE838255R/xx active
- 1976-02-04 AU AU10836/76A patent/AU501325B2/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2127218A (en) * | 1982-08-16 | 1984-04-04 | Omron Tateisi Electronics Co | Semiconductor laser |
Also Published As
Publication number | Publication date |
---|---|
AU1083676A (en) | 1977-08-11 |
FR2300440B2 (enrdf_load_stackoverflow) | 1980-11-07 |
FR2300440A2 (fr) | 1976-09-03 |
AU501325B2 (en) | 1979-06-14 |
BE838255R (fr) | 1976-08-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed |