FR2299730A1 - Diodes electroluminescentes et leur procede de fabrication - Google Patents

Diodes electroluminescentes et leur procede de fabrication

Info

Publication number
FR2299730A1
FR2299730A1 FR7503102A FR7503102A FR2299730A1 FR 2299730 A1 FR2299730 A1 FR 2299730A1 FR 7503102 A FR7503102 A FR 7503102A FR 7503102 A FR7503102 A FR 7503102A FR 2299730 A1 FR2299730 A1 FR 2299730A1
Authority
FR
France
Prior art keywords
manufacturing process
electroluminescent diodes
electroluminescent
diodes
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7503102A
Other languages
English (en)
Other versions
FR2299730B1 (fr
Inventor
Baudouin De Cremoux
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7503102A priority Critical patent/FR2299730A1/fr
Priority to US05/652,284 priority patent/US4024559A/en
Priority to GB3410/76A priority patent/GB1526452A/en
Priority to DE2603316A priority patent/DE2603316C3/de
Priority to JP992976A priority patent/JPS51102591A/ja
Publication of FR2299730A1 publication Critical patent/FR2299730A1/fr
Application granted granted Critical
Publication of FR2299730B1 publication Critical patent/FR2299730B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
FR7503102A 1975-01-31 1975-01-31 Diodes electroluminescentes et leur procede de fabrication Granted FR2299730A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR7503102A FR2299730A1 (fr) 1975-01-31 1975-01-31 Diodes electroluminescentes et leur procede de fabrication
US05/652,284 US4024559A (en) 1975-01-31 1976-01-26 Electroluminescent diodes and a method of manufacturing same
GB3410/76A GB1526452A (en) 1975-01-31 1976-01-28 Electroluminescent diodes and a method of manufacturing same
DE2603316A DE2603316C3 (de) 1975-01-31 1976-01-29 Elektrolumineszierende Halbleiterdiode und Verfahren zu ihrer Herstellung
JP992976A JPS51102591A (fr) 1975-01-31 1976-01-31

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7503102A FR2299730A1 (fr) 1975-01-31 1975-01-31 Diodes electroluminescentes et leur procede de fabrication

Publications (2)

Publication Number Publication Date
FR2299730A1 true FR2299730A1 (fr) 1976-08-27
FR2299730B1 FR2299730B1 (fr) 1978-06-23

Family

ID=9150576

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7503102A Granted FR2299730A1 (fr) 1975-01-31 1975-01-31 Diodes electroluminescentes et leur procede de fabrication

Country Status (5)

Country Link
US (1) US4024559A (fr)
JP (1) JPS51102591A (fr)
DE (1) DE2603316C3 (fr)
FR (1) FR2299730A1 (fr)
GB (1) GB1526452A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2300440A2 (fr) * 1975-02-04 1976-09-03 Int Standard Electric Corp Perfectionnements aux lasers a l'arseniure de gallium a injection

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4376946A (en) * 1980-11-28 1983-03-15 Bell Telephone Laboratories, Incorporated Superluminescent LED with efficient coupling to optical waveguide
US4477824A (en) * 1982-03-04 1984-10-16 At&T Bell Laboratories Light emitting device for optical switching

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2110393A1 (fr) * 1970-10-13 1972-06-02 Int Standard Electric Corp
FR2225855A1 (fr) * 1973-04-12 1974-11-08 Ibm

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3812516A (en) * 1970-05-01 1974-05-21 Bell Telephone Labor Inc Spontaneously emitting hetero-structure junction diodes
JPS5148958B2 (fr) * 1973-01-10 1976-12-23
US3855607A (en) * 1973-05-29 1974-12-17 Rca Corp Semiconductor injection laser with reduced divergence of emitted beam
US3936855A (en) * 1974-08-08 1976-02-03 International Telephone And Telegraph Corporation Light-emitting diode fabrication process

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2110393A1 (fr) * 1970-10-13 1972-06-02 Int Standard Electric Corp
FR2225855A1 (fr) * 1973-04-12 1974-11-08 Ibm

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2300440A2 (fr) * 1975-02-04 1976-09-03 Int Standard Electric Corp Perfectionnements aux lasers a l'arseniure de gallium a injection

Also Published As

Publication number Publication date
US4024559A (en) 1977-05-17
DE2603316C3 (de) 1981-10-29
GB1526452A (en) 1978-09-27
DE2603316B2 (de) 1981-02-12
DE2603316A1 (de) 1976-08-05
JPS51102591A (fr) 1976-09-10
FR2299730B1 (fr) 1978-06-23

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Legal Events

Date Code Title Description
ST Notification of lapse