FR2300440B2 - - Google Patents

Info

Publication number
FR2300440B2
FR2300440B2 FR7602887A FR7602887A FR2300440B2 FR 2300440 B2 FR2300440 B2 FR 2300440B2 FR 7602887 A FR7602887 A FR 7602887A FR 7602887 A FR7602887 A FR 7602887A FR 2300440 B2 FR2300440 B2 FR 2300440B2
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7602887A
Other languages
French (fr)
Other versions
FR2300440A2 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Standard Electric Corp
Original Assignee
International Standard Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Standard Electric Corp filed Critical International Standard Electric Corp
Publication of FR2300440A2 publication Critical patent/FR2300440A2/fr
Application granted granted Critical
Publication of FR2300440B2 publication Critical patent/FR2300440B2/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
FR7602887A 1975-02-04 1976-02-03 Perfectionnements aux lasers a l'arseniure de gallium a injection Granted FR2300440A2 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB470175A GB1494518A (en) 1975-02-04 1975-02-04 Heterostructure lasers

Publications (2)

Publication Number Publication Date
FR2300440A2 FR2300440A2 (fr) 1976-09-03
FR2300440B2 true FR2300440B2 (enrdf_load_stackoverflow) 1980-11-07

Family

ID=9782183

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7602887A Granted FR2300440A2 (fr) 1975-02-04 1976-02-03 Perfectionnements aux lasers a l'arseniure de gallium a injection

Country Status (4)

Country Link
AU (1) AU501325B2 (enrdf_load_stackoverflow)
BE (1) BE838255R (enrdf_load_stackoverflow)
FR (1) FR2300440A2 (enrdf_load_stackoverflow)
GB (1) GB1494518A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2822146C2 (de) * 1978-05-20 1982-11-25 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Heterostruktur-Halbleiterlaserdiode und Verfahren zur Herstellung einer Heterostruktur-Halbleiterdiode
GB2127218B (en) * 1982-08-16 1986-05-21 Omron Tateisi Electronics Co Semiconductor laser

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3163562A (en) * 1961-08-10 1964-12-29 Bell Telephone Labor Inc Semiconductor device including differing energy band gap materials
US3893044A (en) * 1973-04-12 1975-07-01 Ibm Laser device having enclosed laser cavity
FR2299730A1 (fr) * 1975-01-31 1976-08-27 Thomson Csf Diodes electroluminescentes et leur procede de fabrication

Also Published As

Publication number Publication date
FR2300440A2 (fr) 1976-09-03
BE838255R (fr) 1976-08-04
GB1494518A (en) 1977-12-07
AU501325B2 (en) 1979-06-14
AU1083676A (en) 1977-08-11

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