FR2284188A1 - Procede pour la fabrication de transistors a effet de champ - Google Patents
Procede pour la fabrication de transistors a effet de champInfo
- Publication number
- FR2284188A1 FR2284188A1 FR7527177A FR7527177A FR2284188A1 FR 2284188 A1 FR2284188 A1 FR 2284188A1 FR 7527177 A FR7527177 A FR 7527177A FR 7527177 A FR7527177 A FR 7527177A FR 2284188 A1 FR2284188 A1 FR 2284188A1
- Authority
- FR
- France
- Prior art keywords
- manufacturing
- field
- effect transistors
- transistors
- effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/83—FETs having PN junction gate electrodes
- H10D30/831—Vertical FETs having PN junction gate electrodes
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP49101554A JPS5128762A (enrdf_load_stackoverflow) | 1974-09-04 | 1974-09-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2284188A1 true FR2284188A1 (fr) | 1976-04-02 |
FR2284188B1 FR2284188B1 (enrdf_load_stackoverflow) | 1978-12-08 |
Family
ID=14303626
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7527177A Granted FR2284188A1 (fr) | 1974-09-04 | 1975-09-04 | Procede pour la fabrication de transistors a effet de champ |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS5128762A (enrdf_load_stackoverflow) |
DE (1) | DE2539026C2 (enrdf_load_stackoverflow) |
FR (1) | FR2284188A1 (enrdf_load_stackoverflow) |
GB (1) | GB1525733A (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51105277A (en) * | 1975-03-12 | 1976-09-17 | Mitsubishi Electric Corp | Handotaisochino seizohoho |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2103520A1 (enrdf_load_stackoverflow) * | 1970-08-26 | 1972-04-14 | Western Electric Co |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL6504750A (enrdf_load_stackoverflow) * | 1964-04-15 | 1965-10-18 | ||
GB1279395A (en) * | 1968-10-11 | 1972-06-28 | Nat Res Dev | Improvements relating to field effect transistors |
CA975088A (en) * | 1972-04-20 | 1975-09-23 | Ncr Corporation | Four layer switching device |
-
1974
- 1974-09-04 JP JP49101554A patent/JPS5128762A/ja active Pending
-
1975
- 1975-08-29 GB GB35691/75A patent/GB1525733A/en not_active Expired
- 1975-09-02 DE DE2539026A patent/DE2539026C2/de not_active Expired
- 1975-09-04 FR FR7527177A patent/FR2284188A1/fr active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2103520A1 (enrdf_load_stackoverflow) * | 1970-08-26 | 1972-04-14 | Western Electric Co |
Also Published As
Publication number | Publication date |
---|---|
DE2539026A1 (de) | 1976-03-25 |
JPS5128762A (enrdf_load_stackoverflow) | 1976-03-11 |
DE2539026C2 (de) | 1982-05-19 |
FR2284188B1 (enrdf_load_stackoverflow) | 1978-12-08 |
GB1525733A (en) | 1978-09-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
BE853547A (fr) | Procede de fabrication de transistors a effet de champ | |
FR2276692A1 (fr) | Procede de fabrication de dispositifs semiconducteurs | |
BE832839A (fr) | Structure a semi-conducteur et procede pour sa fabrication | |
BE834965A (fr) | Procede pour fabriquer un dispositif semiconducteur et dispositif ainsi obtenu | |
FR2286505A1 (fr) | Procede de fabrication de structures semi-conductrices integrees | |
FR2275880A1 (fr) | Procede perfectionne pour la fabrication d'une structure a transistors a effet de champ a porte isolee | |
FR2339954A1 (fr) | Procede de fabrication de dispositifs mos | |
FR2274990A1 (fr) | Procede de fabrication de cassettes pour magnetophones et cassettes obtenues par ce procede | |
FR2301922A1 (fr) | Procede pour fabriquer un transistor commande en inverse | |
BE835288A (fr) | Procede de fabrication de transistors a effet de champ perfectionnes | |
FR2302499A1 (fr) | Procede pour la fabrication de revete | |
BE785287A (fr) | Procede de fabrication des conducteurs-poutres pour dispositifssemiconducteurs | |
BE780695A (fr) | Procede de fabrication d'un transistor a effet de champ | |
FR2297574A1 (fr) | Procede de fabrication de sucreries | |
BE786889A (fr) | Procede de fabrication de dispositifs a semi-conducteurs | |
FR2312116A1 (fr) | Procede pour fabriquer des composants a semi-conducteurs | |
BE824681A (fr) | Procede de fabrication de 7-amino-cephemes | |
BE836023A (fr) | Procede de fabrication d'aminucomposes | |
BE835413A (fr) | Procede de fabrication de nitronaphtalenes | |
BE824125A (fr) | Procede pour la fabrication continue de carboxymethylcellulose | |
FR2332801A1 (fr) | Procede de fabrication de dispositifs semi-conducteurs | |
BE824966A (fr) | Procede ameliore de fabrication d'acrylamidee | |
FR2298189A1 (fr) | Procede pour fabriquer des dispositifs semicon | |
FR2284188A1 (fr) | Procede pour la fabrication de transistors a effet de champ | |
FR2335041A1 (fr) | Procede de production d'un transistor a effet de champ |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
CD | Change of name or company name |