FR2335041A1 - Procede de production d'un transistor a effet de champ - Google Patents

Procede de production d'un transistor a effet de champ

Info

Publication number
FR2335041A1
FR2335041A1 FR7637401A FR7637401A FR2335041A1 FR 2335041 A1 FR2335041 A1 FR 2335041A1 FR 7637401 A FR7637401 A FR 7637401A FR 7637401 A FR7637401 A FR 7637401A FR 2335041 A1 FR2335041 A1 FR 2335041A1
Authority
FR
France
Prior art keywords
production
field
effect transistor
transistor
effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7637401A
Other languages
English (en)
Other versions
FR2335041B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of FR2335041A1 publication Critical patent/FR2335041A1/fr
Priority to CH1506677A priority Critical patent/CH617386A5/fr
Application granted granted Critical
Publication of FR2335041B1 publication Critical patent/FR2335041B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
    • H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
    • H01L29/66863—Lateral single gate transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • H01L29/8128—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate with recessed gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
FR7637401A 1975-12-12 1976-12-10 Procede de production d'un transistor a effet de champ Granted FR2335041A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CH1506677A CH617386A5 (en) 1976-12-10 1977-12-08 Method for manufacturing hollow bodies

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US64012475A 1975-12-12 1975-12-12

Publications (2)

Publication Number Publication Date
FR2335041A1 true FR2335041A1 (fr) 1977-07-08
FR2335041B1 FR2335041B1 (fr) 1980-08-14

Family

ID=24566939

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7637401A Granted FR2335041A1 (fr) 1975-12-12 1976-12-10 Procede de production d'un transistor a effet de champ

Country Status (2)

Country Link
FR (1) FR2335041A1 (fr)
GB (1) GB1563913A (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2482367A1 (fr) * 1980-05-07 1981-11-13 Cise Spa Procede de fabrication de transistors a effet de champ pour ondes micrometriques
EP0054998A1 (fr) * 1980-12-24 1982-06-30 Laboratoires D'electronique Et De Physique Appliquee L.E.P. Procédé de fabrication de transistors à effet de champ à grille auto-alignée et transistors ainsi obtenus
FR2558647A1 (fr) * 1984-01-23 1985-07-26 Labo Electronique Physique Transistor a effet de champ de type schottky pour applications hyperfrequences et procede de realisation permettant d'obtenir un tel transistor

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2133621B (en) * 1983-01-11 1987-02-04 Emi Ltd Junction field effect transistor
CN113053742B (zh) * 2021-03-12 2024-06-11 浙江集迈科微电子有限公司 GaN器件及制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2104704A1 (fr) * 1970-08-07 1972-04-21 Thomson Csf
US3898353A (en) * 1974-10-03 1975-08-05 Us Army Self aligned drain and gate field effect transistor
US3920861A (en) * 1972-12-18 1975-11-18 Rca Corp Method of making a semiconductor device
US3942186A (en) * 1973-10-09 1976-03-02 Westinghouse Electric Corporation High frequency, field-effect transistor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2104704A1 (fr) * 1970-08-07 1972-04-21 Thomson Csf
US3920861A (en) * 1972-12-18 1975-11-18 Rca Corp Method of making a semiconductor device
US3942186A (en) * 1973-10-09 1976-03-02 Westinghouse Electric Corporation High frequency, field-effect transistor
US3898353A (en) * 1974-10-03 1975-08-05 Us Army Self aligned drain and gate field effect transistor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2482367A1 (fr) * 1980-05-07 1981-11-13 Cise Spa Procede de fabrication de transistors a effet de champ pour ondes micrometriques
EP0054998A1 (fr) * 1980-12-24 1982-06-30 Laboratoires D'electronique Et De Physique Appliquee L.E.P. Procédé de fabrication de transistors à effet de champ à grille auto-alignée et transistors ainsi obtenus
FR2558647A1 (fr) * 1984-01-23 1985-07-26 Labo Electronique Physique Transistor a effet de champ de type schottky pour applications hyperfrequences et procede de realisation permettant d'obtenir un tel transistor
EP0152126A2 (fr) * 1984-01-23 1985-08-21 Laboratoires D'electronique Et De Physique Appliquee L.E.P. Transistor à effet de champ de type MESTEC pour applications hyperfréquences et procédé de réalisation permettant d'obtenir un tel transistor
EP0152126A3 (en) * 1984-01-23 1985-09-25 Laboratoires D'electronique Et De Physique Appliquee L.E.P. Mesfet field-effect transistors for hyperfrequency, applications and process for manufacturing such a transistor

Also Published As

Publication number Publication date
FR2335041B1 (fr) 1980-08-14
GB1563913A (en) 1980-04-02

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Legal Events

Date Code Title Description
ST Notification of lapse