FR2284188A1 - PROCESS FOR THE MANUFACTURING OF FIELD-EFFECT TRANSISTORS - Google Patents

PROCESS FOR THE MANUFACTURING OF FIELD-EFFECT TRANSISTORS

Info

Publication number
FR2284188A1
FR2284188A1 FR7527177A FR7527177A FR2284188A1 FR 2284188 A1 FR2284188 A1 FR 2284188A1 FR 7527177 A FR7527177 A FR 7527177A FR 7527177 A FR7527177 A FR 7527177A FR 2284188 A1 FR2284188 A1 FR 2284188A1
Authority
FR
France
Prior art keywords
manufacturing
field
effect transistors
transistors
effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7527177A
Other languages
French (fr)
Other versions
FR2284188B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of FR2284188A1 publication Critical patent/FR2284188A1/en
Application granted granted Critical
Publication of FR2284188B1 publication Critical patent/FR2284188B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • H01L29/8083—Vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Thin Film Transistor (AREA)
FR7527177A 1974-09-04 1975-09-04 PROCESS FOR THE MANUFACTURING OF FIELD-EFFECT TRANSISTORS Granted FR2284188A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10155474A JPS5128762A (en) 1974-09-04 1974-09-04 TATEGATASETSUGODENKAIKOKAHANDOTAISOCHI NO SEIZOHOHO

Publications (2)

Publication Number Publication Date
FR2284188A1 true FR2284188A1 (en) 1976-04-02
FR2284188B1 FR2284188B1 (en) 1978-12-08

Family

ID=14303626

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7527177A Granted FR2284188A1 (en) 1974-09-04 1975-09-04 PROCESS FOR THE MANUFACTURING OF FIELD-EFFECT TRANSISTORS

Country Status (4)

Country Link
JP (1) JPS5128762A (en)
DE (1) DE2539026C2 (en)
FR (1) FR2284188A1 (en)
GB (1) GB1525733A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51105277A (en) * 1975-03-12 1976-09-17 Mitsubishi Electric Corp Handotaisochino seizohoho

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2103520A1 (en) * 1970-08-26 1972-04-14 Western Electric Co

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6504750A (en) * 1964-04-15 1965-10-18
GB1279395A (en) * 1968-10-11 1972-06-28 Nat Res Dev Improvements relating to field effect transistors
CA975088A (en) * 1972-04-20 1975-09-23 Ncr Corporation Four layer switching device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2103520A1 (en) * 1970-08-26 1972-04-14 Western Electric Co

Also Published As

Publication number Publication date
DE2539026A1 (en) 1976-03-25
JPS5128762A (en) 1976-03-11
FR2284188B1 (en) 1978-12-08
GB1525733A (en) 1978-09-20
DE2539026C2 (en) 1982-05-19

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Legal Events

Date Code Title Description
CD Change of name or company name