JPS5128762A - TATEGATASETSUGODENKAIKOKAHANDOTAISOCHI NO SEIZOHOHO - Google Patents
TATEGATASETSUGODENKAIKOKAHANDOTAISOCHI NO SEIZOHOHOInfo
- Publication number
- JPS5128762A JPS5128762A JP10155474A JP10155474A JPS5128762A JP S5128762 A JPS5128762 A JP S5128762A JP 10155474 A JP10155474 A JP 10155474A JP 10155474 A JP10155474 A JP 10155474A JP S5128762 A JPS5128762 A JP S5128762A
- Authority
- JP
- Japan
- Prior art keywords
- tategatasetsugodenkaikokahandotaisochi
- seizohoho
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
- H01L29/8083—Vertical transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
- Thin Film Transistor (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10155474A JPS5128762A (en) | 1974-09-04 | 1974-09-04 | TATEGATASETSUGODENKAIKOKAHANDOTAISOCHI NO SEIZOHOHO |
GB3569175A GB1525733A (en) | 1974-09-04 | 1975-08-29 | Junction field effect transistors |
DE19752539026 DE2539026C2 (en) | 1974-09-04 | 1975-09-02 | A method of manufacturing a vertical type junction field effect transistor |
FR7527177A FR2284188A1 (en) | 1974-09-04 | 1975-09-04 | PROCESS FOR THE MANUFACTURING OF FIELD-EFFECT TRANSISTORS |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10155474A JPS5128762A (en) | 1974-09-04 | 1974-09-04 | TATEGATASETSUGODENKAIKOKAHANDOTAISOCHI NO SEIZOHOHO |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5128762A true JPS5128762A (en) | 1976-03-11 |
Family
ID=14303626
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10155474A Pending JPS5128762A (en) | 1974-09-04 | 1974-09-04 | TATEGATASETSUGODENKAIKOKAHANDOTAISOCHI NO SEIZOHOHO |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS5128762A (en) |
DE (1) | DE2539026C2 (en) |
FR (1) | FR2284188A1 (en) |
GB (1) | GB1525733A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51105277A (en) * | 1975-03-12 | 1976-09-17 | Mitsubishi Electric Corp | Handotaisochino seizohoho |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1102164A (en) * | 1964-04-15 | 1968-02-07 | Texas Instruments Inc | Selective impurity diffusion |
GB1279395A (en) * | 1968-10-11 | 1972-06-28 | Nat Res Dev | Improvements relating to field effect transistors |
US3730787A (en) * | 1970-08-26 | 1973-05-01 | Bell Telephone Labor Inc | Method of fabricating semiconductor integrated circuits using deposited doped oxides as a source of dopant impurities |
CA975088A (en) * | 1972-04-20 | 1975-09-23 | Ncr Corporation | Four layer switching device |
-
1974
- 1974-09-04 JP JP10155474A patent/JPS5128762A/en active Pending
-
1975
- 1975-08-29 GB GB3569175A patent/GB1525733A/en not_active Expired
- 1975-09-02 DE DE19752539026 patent/DE2539026C2/en not_active Expired
- 1975-09-04 FR FR7527177A patent/FR2284188A1/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51105277A (en) * | 1975-03-12 | 1976-09-17 | Mitsubishi Electric Corp | Handotaisochino seizohoho |
Also Published As
Publication number | Publication date |
---|---|
DE2539026C2 (en) | 1982-05-19 |
GB1525733A (en) | 1978-09-20 |
FR2284188A1 (en) | 1976-04-02 |
FR2284188B1 (en) | 1978-12-08 |
DE2539026A1 (en) | 1976-03-25 |
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JPS5128762A (en) | TATEGATASETSUGODENKAIKOKAHANDOTAISOCHI NO SEIZOHOHO |