JPS5128762A - TATEGATASETSUGODENKAIKOKAHANDOTAISOCHI NO SEIZOHOHO - Google Patents

TATEGATASETSUGODENKAIKOKAHANDOTAISOCHI NO SEIZOHOHO

Info

Publication number
JPS5128762A
JPS5128762A JP10155474A JP10155474A JPS5128762A JP S5128762 A JPS5128762 A JP S5128762A JP 10155474 A JP10155474 A JP 10155474A JP 10155474 A JP10155474 A JP 10155474A JP S5128762 A JPS5128762 A JP S5128762A
Authority
JP
Japan
Prior art keywords
tategatasetsugodenkaikokahandotaisochi
seizohoho
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10155474A
Other languages
Japanese (ja)
Inventor
Noboru Fuse
Kenichi Muramoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP10155474A priority Critical patent/JPS5128762A/en
Priority to GB3569175A priority patent/GB1525733A/en
Priority to DE19752539026 priority patent/DE2539026C2/en
Priority to FR7527177A priority patent/FR2284188A1/en
Publication of JPS5128762A publication Critical patent/JPS5128762A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • H01L29/8083—Vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Thin Film Transistor (AREA)
JP10155474A 1974-09-04 1974-09-04 TATEGATASETSUGODENKAIKOKAHANDOTAISOCHI NO SEIZOHOHO Pending JPS5128762A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP10155474A JPS5128762A (en) 1974-09-04 1974-09-04 TATEGATASETSUGODENKAIKOKAHANDOTAISOCHI NO SEIZOHOHO
GB3569175A GB1525733A (en) 1974-09-04 1975-08-29 Junction field effect transistors
DE19752539026 DE2539026C2 (en) 1974-09-04 1975-09-02 A method of manufacturing a vertical type junction field effect transistor
FR7527177A FR2284188A1 (en) 1974-09-04 1975-09-04 PROCESS FOR THE MANUFACTURING OF FIELD-EFFECT TRANSISTORS

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10155474A JPS5128762A (en) 1974-09-04 1974-09-04 TATEGATASETSUGODENKAIKOKAHANDOTAISOCHI NO SEIZOHOHO

Publications (1)

Publication Number Publication Date
JPS5128762A true JPS5128762A (en) 1976-03-11

Family

ID=14303626

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10155474A Pending JPS5128762A (en) 1974-09-04 1974-09-04 TATEGATASETSUGODENKAIKOKAHANDOTAISOCHI NO SEIZOHOHO

Country Status (4)

Country Link
JP (1) JPS5128762A (en)
DE (1) DE2539026C2 (en)
FR (1) FR2284188A1 (en)
GB (1) GB1525733A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51105277A (en) * 1975-03-12 1976-09-17 Mitsubishi Electric Corp Handotaisochino seizohoho

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1514807B2 (en) * 1964-04-15 1971-09-02 Texas Instruments Inc., Dallas. Tex. (V.St.A.) METHOD OF MANUFACTURING A PLANAR SEMICONDUCTOR ARRANGEMENT
GB1279395A (en) * 1968-10-11 1972-06-28 Nat Res Dev Improvements relating to field effect transistors
US3730787A (en) * 1970-08-26 1973-05-01 Bell Telephone Labor Inc Method of fabricating semiconductor integrated circuits using deposited doped oxides as a source of dopant impurities
CA975088A (en) * 1972-04-20 1975-09-23 Ncr Corporation Four layer switching device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51105277A (en) * 1975-03-12 1976-09-17 Mitsubishi Electric Corp Handotaisochino seizohoho

Also Published As

Publication number Publication date
DE2539026A1 (en) 1976-03-25
DE2539026C2 (en) 1982-05-19
GB1525733A (en) 1978-09-20
FR2284188A1 (en) 1976-04-02
FR2284188B1 (en) 1978-12-08

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