FR2284188B1 - - Google Patents

Info

Publication number
FR2284188B1
FR2284188B1 FR7527177A FR7527177A FR2284188B1 FR 2284188 B1 FR2284188 B1 FR 2284188B1 FR 7527177 A FR7527177 A FR 7527177A FR 7527177 A FR7527177 A FR 7527177A FR 2284188 B1 FR2284188 B1 FR 2284188B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7527177A
Other languages
French (fr)
Other versions
FR2284188A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of FR2284188A1 publication Critical patent/FR2284188A1/fr
Application granted granted Critical
Publication of FR2284188B1 publication Critical patent/FR2284188B1/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/80FETs having rectifying junction gate electrodes
    • H10D30/83FETs having PN junction gate electrodes
    • H10D30/831Vertical FETs having PN junction gate electrodes
FR7527177A 1974-09-04 1975-09-04 Procede pour la fabrication de transistors a effet de champ Granted FR2284188A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP49101554A JPS5128762A (enrdf_load_stackoverflow) 1974-09-04 1974-09-04

Publications (2)

Publication Number Publication Date
FR2284188A1 FR2284188A1 (fr) 1976-04-02
FR2284188B1 true FR2284188B1 (enrdf_load_stackoverflow) 1978-12-08

Family

ID=14303626

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7527177A Granted FR2284188A1 (fr) 1974-09-04 1975-09-04 Procede pour la fabrication de transistors a effet de champ

Country Status (4)

Country Link
JP (1) JPS5128762A (enrdf_load_stackoverflow)
DE (1) DE2539026C2 (enrdf_load_stackoverflow)
FR (1) FR2284188A1 (enrdf_load_stackoverflow)
GB (1) GB1525733A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51105277A (en) * 1975-03-12 1976-09-17 Mitsubishi Electric Corp Handotaisochino seizohoho

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6504750A (enrdf_load_stackoverflow) * 1964-04-15 1965-10-18
GB1279395A (en) * 1968-10-11 1972-06-28 Nat Res Dev Improvements relating to field effect transistors
US3730787A (en) * 1970-08-26 1973-05-01 Bell Telephone Labor Inc Method of fabricating semiconductor integrated circuits using deposited doped oxides as a source of dopant impurities
CA975088A (en) * 1972-04-20 1975-09-23 Ncr Corporation Four layer switching device

Also Published As

Publication number Publication date
DE2539026A1 (de) 1976-03-25
FR2284188A1 (fr) 1976-04-02
JPS5128762A (enrdf_load_stackoverflow) 1976-03-11
DE2539026C2 (de) 1982-05-19
GB1525733A (en) 1978-09-20

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