FR2284186A1 - Appareil et procede pour former un modele de dessin desire sur un objet au moyen d'un faisceau de particules chargees - Google Patents

Appareil et procede pour former un modele de dessin desire sur un objet au moyen d'un faisceau de particules chargees

Info

Publication number
FR2284186A1
FR2284186A1 FR7527498A FR7527498A FR2284186A1 FR 2284186 A1 FR2284186 A1 FR 2284186A1 FR 7527498 A FR7527498 A FR 7527498A FR 7527498 A FR7527498 A FR 7527498A FR 2284186 A1 FR2284186 A1 FR 2284186A1
Authority
FR
France
Prior art keywords
lens system
semiconductors
charged particle
esp
forming patterns
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7527498A
Other languages
English (en)
French (fr)
Other versions
FR2284186B1 (enrdf_load_stackoverflow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Publication of FR2284186A1 publication Critical patent/FR2284186A1/fr
Application granted granted Critical
Publication of FR2284186B1 publication Critical patent/FR2284186B1/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002Details
    • H01J37/3007Electron or ion-optical systems

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
FR7527498A 1974-09-06 1975-09-08 Appareil et procede pour former un modele de dessin desire sur un objet au moyen d'un faisceau de particules chargees Granted FR2284186A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10196674A JPS5311828B2 (enrdf_load_stackoverflow) 1974-09-06 1974-09-06

Publications (2)

Publication Number Publication Date
FR2284186A1 true FR2284186A1 (fr) 1976-04-02
FR2284186B1 FR2284186B1 (enrdf_load_stackoverflow) 1979-01-19

Family

ID=14314598

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7527498A Granted FR2284186A1 (fr) 1974-09-06 1975-09-08 Appareil et procede pour former un modele de dessin desire sur un objet au moyen d'un faisceau de particules chargees

Country Status (2)

Country Link
JP (1) JPS5311828B2 (enrdf_load_stackoverflow)
FR (1) FR2284186A1 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2385222A1 (fr) * 1977-03-23 1978-10-20 Western Electric Co Procede et dispositif d'exposition par faisceau d'electrons

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5360162A (en) * 1976-11-10 1978-05-30 Toshiba Corp Electron beam irradiation device
FR2412939A1 (fr) * 1977-12-23 1979-07-20 Anvar Implanteur d'ions a fort courant
JPS6091630A (ja) * 1983-10-25 1985-05-23 Matsushita Electric Ind Co Ltd 不純物拡散方法
AT388628B (de) * 1986-01-31 1989-08-10 Ims Ionen Mikrofab Syst Einrichtung fuer projektionsgeraete
KR100538813B1 (ko) * 2004-07-31 2005-12-23 주식회사 하이닉스반도체 트랜지스터 파라미터의 균일도 확보를 위한 이온주입 장치및 그를 이용한 이온주입 방법
JP7442441B2 (ja) * 2017-09-29 2024-03-04 エーエスエムエル ネザーランズ ビー.ブイ. 荷電粒子ビーム検査のためのサンプルの予備帯電方法及び装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1926849A1 (de) * 1968-05-27 1969-12-11 Tno Vorrichtung zur Registrierung mit Elektronenstrahlen

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1926849A1 (de) * 1968-05-27 1969-12-11 Tno Vorrichtung zur Registrierung mit Elektronenstrahlen

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
DE1926849G LATERAL DIFFUSION", S.A. ROOSILD ET AL., PAGES 1059-1060.(DTO) *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2385222A1 (fr) * 1977-03-23 1978-10-20 Western Electric Co Procede et dispositif d'exposition par faisceau d'electrons

Also Published As

Publication number Publication date
FR2284186B1 (enrdf_load_stackoverflow) 1979-01-19
JPS5311828B2 (enrdf_load_stackoverflow) 1978-04-25
JPS5129091A (enrdf_load_stackoverflow) 1976-03-11

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Legal Events

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