JPH0140494B2 - - Google Patents

Info

Publication number
JPH0140494B2
JPH0140494B2 JP17267580A JP17267580A JPH0140494B2 JP H0140494 B2 JPH0140494 B2 JP H0140494B2 JP 17267580 A JP17267580 A JP 17267580A JP 17267580 A JP17267580 A JP 17267580A JP H0140494 B2 JPH0140494 B2 JP H0140494B2
Authority
JP
Japan
Prior art keywords
charged beam
exposed
wafer
pattern
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP17267580A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5796525A (en
Inventor
Toshihiko Osada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17267580A priority Critical patent/JPS5796525A/ja
Publication of JPS5796525A publication Critical patent/JPS5796525A/ja
Publication of JPH0140494B2 publication Critical patent/JPH0140494B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/026Means for avoiding or neutralising unwanted electrical charges on tube components

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
JP17267580A 1980-12-09 1980-12-09 Method of charged beam exposure Granted JPS5796525A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17267580A JPS5796525A (en) 1980-12-09 1980-12-09 Method of charged beam exposure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17267580A JPS5796525A (en) 1980-12-09 1980-12-09 Method of charged beam exposure

Publications (2)

Publication Number Publication Date
JPS5796525A JPS5796525A (en) 1982-06-15
JPH0140494B2 true JPH0140494B2 (enrdf_load_stackoverflow) 1989-08-29

Family

ID=15946279

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17267580A Granted JPS5796525A (en) 1980-12-09 1980-12-09 Method of charged beam exposure

Country Status (1)

Country Link
JP (1) JPS5796525A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6258620A (ja) * 1985-09-09 1987-03-14 Nippon Telegr & Teleph Corp <Ntt> 荷電ビ−ム装置

Also Published As

Publication number Publication date
JPS5796525A (en) 1982-06-15

Similar Documents

Publication Publication Date Title
KR950014607B1 (ko) 반사마스크 및 이를 사용한 하전빔노광장치
US6750571B2 (en) Magnetically shielded linear motors, and stage apparatus comprising same
JP2005039254A (ja) 超高および超低運動イオン・エネルギーによるターゲットのイオン照射
JP2578093B2 (ja) 電子像投影装置
US3614423A (en) Charged particle pattern imaging and exposure system
US4546258A (en) Charged particle beam apparatus
US5112724A (en) Lithographic method
JPH0140494B2 (enrdf_load_stackoverflow)
US6455863B1 (en) Apparatus and method for forming a charged particle beam of arbitrary shape
US6608317B1 (en) Charged-particle-beam (CPB)-optical systems with improved shielding against stray magnetic fields, and CPB microlithography apparatus comprising same
EP0009049B1 (en) Apparatus and method for fabricating microminiature devices
EP0035556B1 (en) Electron beam system
US7189981B2 (en) Electromagnetic focusing method for electron-beam lithography system
FR2284186A1 (fr) Appareil et procede pour former un modele de dessin desire sur un objet au moyen d&#39;un faisceau de particules chargees
JP2001284239A (ja) 荷電粒子線露光装置、及び半導体デバイスの製造方法
US4647523A (en) Production of a resist image
Polasko et al. Low energy electron beam lithography
JP2001284205A (ja) 荷電粒子ビーム描画装置
EP0069728A1 (en) Parallel charged particle beam exposure system
Weidenmüller et al. Stencil masks for high energy ion projection
JPS59163745A (ja) イオン打込み装置
JPH056337B2 (enrdf_load_stackoverflow)
JP2595566B2 (ja) 荷電粒子ビーム露光装置
JPH056336B2 (enrdf_load_stackoverflow)
JPH04171810A (ja) 荷電ビーム描画装置