JPS5129091A - - Google Patents

Info

Publication number
JPS5129091A
JPS5129091A JP49101966A JP10196674A JPS5129091A JP S5129091 A JPS5129091 A JP S5129091A JP 49101966 A JP49101966 A JP 49101966A JP 10196674 A JP10196674 A JP 10196674A JP S5129091 A JPS5129091 A JP S5129091A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP49101966A
Other languages
Japanese (ja)
Other versions
JPS5311828B2 (enrdf_load_stackoverflow
Inventor
Shigeo Okayama
Kyuzo Kawakatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP10196674A priority Critical patent/JPS5311828B2/ja
Priority to FR7527498A priority patent/FR2284186A1/fr
Publication of JPS5129091A publication Critical patent/JPS5129091A/ja
Priority to US05/687,690 priority patent/US4075488A/en
Publication of JPS5311828B2 publication Critical patent/JPS5311828B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
JP10196674A 1974-09-06 1974-09-06 Expired JPS5311828B2 (enrdf_load_stackoverflow)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP10196674A JPS5311828B2 (enrdf_load_stackoverflow) 1974-09-06 1974-09-06
FR7527498A FR2284186A1 (fr) 1974-09-06 1975-09-08 Appareil et procede pour former un modele de dessin desire sur un objet au moyen d'un faisceau de particules chargees
US05/687,690 US4075488A (en) 1974-09-06 1976-05-19 Pattern forming apparatus using quadrupole lenses

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10196674A JPS5311828B2 (enrdf_load_stackoverflow) 1974-09-06 1974-09-06

Publications (2)

Publication Number Publication Date
JPS5129091A true JPS5129091A (enrdf_load_stackoverflow) 1976-03-11
JPS5311828B2 JPS5311828B2 (enrdf_load_stackoverflow) 1978-04-25

Family

ID=14314598

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10196674A Expired JPS5311828B2 (enrdf_load_stackoverflow) 1974-09-06 1974-09-06

Country Status (2)

Country Link
JP (1) JPS5311828B2 (enrdf_load_stackoverflow)
FR (1) FR2284186A1 (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5360162A (en) * 1976-11-10 1978-05-30 Toshiba Corp Electron beam irradiation device
JPS54100665A (en) * 1977-12-23 1979-08-08 Anvar Ion implanting machine and method of controlling size of ion beam
JPS6091630A (ja) * 1983-10-25 1985-05-23 Matsushita Electric Ind Co Ltd 不純物拡散方法
JPS62208632A (ja) * 1986-01-31 1987-09-12 イ−エムエス・イオ−ネンミクロフアブリカチオンス・ジステ−メ・ゲゼルシヤフト・ミト・ベシユレンクテル・ハウツング イオン投影機用の装置
JP2006049267A (ja) * 2004-07-31 2006-02-16 Hynix Semiconductor Inc トランジスタパラメータを均一化するためのイオン注入装置及びそれを用いたイオン注入方法
JP2020535587A (ja) * 2017-09-29 2020-12-03 エーエスエムエル ネザーランズ ビー．ブイ． 荷電粒子ビーム検査のためのサンプルの予備帯電方法及び装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1100237A (en) * 1977-03-23 1981-04-28 Roger F.W. Pease Multiple electron beam exposure system

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6807439A (enrdf_load_stackoverflow) * 1968-05-27 1969-12-01

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5360162A (en) * 1976-11-10 1978-05-30 Toshiba Corp Electron beam irradiation device
JPS54100665A (en) * 1977-12-23 1979-08-08 Anvar Ion implanting machine and method of controlling size of ion beam
JPS6091630A (ja) * 1983-10-25 1985-05-23 Matsushita Electric Ind Co Ltd 不純物拡散方法
JPS62208632A (ja) * 1986-01-31 1987-09-12 イ−エムエス・イオ−ネンミクロフアブリカチオンス・ジステ−メ・ゲゼルシヤフト・ミト・ベシユレンクテル・ハウツング イオン投影機用の装置
JP2006049267A (ja) * 2004-07-31 2006-02-16 Hynix Semiconductor Inc トランジスタパラメータを均一化するためのイオン注入装置及びそれを用いたイオン注入方法
JP2020535587A (ja) * 2017-09-29 2020-12-03 エーエスエムエル ネザーランズ ビー．ブイ． 荷電粒子ビーム検査のためのサンプルの予備帯電方法及び装置
US11676792B2 (en) 2017-09-29 2023-06-13 Asml Netherlands, B.V Sample pre-charging methods and apparatuses for charged particle beam inspection
US12191109B2 (en) 2017-09-29 2025-01-07 Asml Netherlands B.V. Sample pre-charging methods and apparatuses for charged particle beam inspection

Also Published As

Publication number Publication date
FR2284186A1 (fr) 1976-04-02
FR2284186B1 (enrdf_load_stackoverflow) 1979-01-19
JPS5311828B2 (enrdf_load_stackoverflow) 1978-04-25

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