FR2279222A1 - Procede pour doper une couche semiconductrice - Google Patents

Procede pour doper une couche semiconductrice

Info

Publication number
FR2279222A1
FR2279222A1 FR7521062A FR7521062A FR2279222A1 FR 2279222 A1 FR2279222 A1 FR 2279222A1 FR 7521062 A FR7521062 A FR 7521062A FR 7521062 A FR7521062 A FR 7521062A FR 2279222 A1 FR2279222 A1 FR 2279222A1
Authority
FR
France
Prior art keywords
doping
semiconductor layer
semiconductor
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7521062A
Other languages
English (en)
French (fr)
Other versions
FR2279222B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of FR2279222A1 publication Critical patent/FR2279222A1/fr
Application granted granted Critical
Publication of FR2279222B1 publication Critical patent/FR2279222B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/20—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices for inducing a nuclear reaction transmuting chemical elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/165—Transmutation doping
FR7521062A 1974-07-15 1975-07-04 Procede pour doper une couche semiconductrice Granted FR2279222A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2433991A DE2433991A1 (de) 1974-07-15 1974-07-15 Verfahren zum dotieren einer halbleiterschicht

Publications (2)

Publication Number Publication Date
FR2279222A1 true FR2279222A1 (fr) 1976-02-13
FR2279222B1 FR2279222B1 (enExample) 1979-04-06

Family

ID=5920613

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7521062A Granted FR2279222A1 (fr) 1974-07-15 1975-07-04 Procede pour doper une couche semiconductrice

Country Status (6)

Country Link
US (1) US3967982A (enExample)
JP (1) JPS5140074A (enExample)
BE (1) BE831381A (enExample)
DE (1) DE2433991A1 (enExample)
FR (1) FR2279222A1 (enExample)
IT (1) IT1039205B (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2552621C3 (de) * 1975-11-24 1979-09-13 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von n-dotierten Siliciumeinkristallen mit in radialer Richtung tellerförmigem Profil des spezifischen Widerstandes
US4277307A (en) * 1977-10-17 1981-07-07 Siemens Aktiengesellschaft Method of restoring Si crystal lattice order after neutron irradiation
DE2753488C2 (de) * 1977-12-01 1986-06-19 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung von n-dotiertem Silicium durch Neutronenbestrahlung
US4278475A (en) * 1979-01-04 1981-07-14 Westinghouse Electric Corp. Forming of contoured irradiated regions in materials such as semiconductor bodies by nuclear radiation
US4348351A (en) * 1980-04-21 1982-09-07 Monsanto Company Method for producing neutron doped silicon having controlled dopant variation
DE3044723C2 (de) * 1980-11-27 1984-01-26 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung eines mit einer niederohmigen aktiven Halbleiterschicht versehenen hochohmigen Substratkörpers
JPS57210635A (en) * 1981-06-19 1982-12-24 Tokyo Daigaku Manufacture of semiconductor device
US4526624A (en) * 1982-07-02 1985-07-02 California Institute Of Technology Enhanced adhesion of films to semiconductors or metals by high energy bombardment
DE3511363A1 (de) * 1985-03-28 1986-10-09 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von bereichen mit einstellbarer, gleichfoermiger dotierung in siliziumkristallscheiben durch neutronenbestrahlung sowie verwendung dieses verfahrens zur herstellung von leistungsthyristoren
DE3714357C2 (de) * 1986-04-30 1994-02-03 Toshiba Ceramics Co Siliciumwafer und Verfahren zu dessen Herstellung und Siliziumwafer-Auswahleinrichtung
DE3942387A1 (de) * 1989-12-21 1991-06-27 Florian Fischer Transportsystem, insbesondere zum transportieren von siliziumeinkristallen durch das becken eines forschungsreaktors
US5212100A (en) * 1991-12-04 1993-05-18 Texas Instruments Incorporated P-well CMOS process using neutron activated doped N-/N+ silicon substrates
TW330318B (en) * 1997-01-28 1998-04-21 Ind Tech Res Inst The BJT device and its producing method
US6372041B1 (en) 1999-01-08 2002-04-16 Gan Semiconductor Inc. Method and apparatus for single crystal gallium nitride (GaN) bulk synthesis
WO2001004940A1 (en) * 1999-07-13 2001-01-18 Gan Semiconductor, Inc. Method for doping gallium nitride (gan) substrates and the resulting doped gan substrate
GB9916370D0 (en) * 1999-07-14 1999-09-15 Koninkl Philips Electronics Nv Manufacture of semiconductor devices and material
US9887087B1 (en) * 2014-07-08 2018-02-06 Michael Keith Fuller Semiconductor and other materials by thermal neutron transmutation

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1194374A (enExample) * 1957-04-12 1959-11-09
DE1948884B2 (de) * 1969-09-27 1971-09-30 Verfahren zum beseitigen von inversionsschichten

Also Published As

Publication number Publication date
JPS5140074A (enExample) 1976-04-03
IT1039205B (it) 1979-12-10
DE2433991A1 (de) 1976-02-05
BE831381A (fr) 1975-11-03
US3967982A (en) 1976-07-06
FR2279222B1 (enExample) 1979-04-06

Similar Documents

Publication Publication Date Title
BE826941A (fr) Procede pour deposer selectivement une couche de verre sur des dispositifs semi-conducteurs
IT955649B (it) Metodo per la fabbricazione di un dispositivo semiconduttore
RO70907A (ro) Procedeu pentru obtinerea n-fosfonometilglicinei
BE831381A (fr) Procede de dopage d'une couche de semi-conducteur
FR2277114A1 (fr) Procede de formation d'une couche metallique sur un polyimide
IT1022419B (it) Metodo per orbare secondo una deter minata configurazione uno strato di ossido contenente silicio su un substrato
FR2276692A1 (fr) Procede de fabrication de dispositifs semiconducteurs
FR2284192A1 (fr) Structure a semi-conducteur et procede pour sa fabrication
IT1026142B (it) Procedimento per produrre strati di carburo di silicio su un sostrato di silicio
BE775498A (fr) Procede pour fabriquer un generateur thermo-electrique
FR2276690A1 (fr) Substrat isolant portant une couche mince semi-conductrice monocristalline et procede pour sa fabrication
BE792614A (fr) Procede de realisation d'une couche d'oxyde sur un semi-conducteur
BR7408804D0 (pt) Metodo de fabricacao de um dispositivo semicondutor
BE785287A (fr) Procede de fabrication des conducteurs-poutres pour dispositifssemiconducteurs
FR2316732A1 (fr) Procede pour former des regions dielectriquement isolees dans un substrat semi-conducteur
FR2281646A1 (fr) Procede pour fabriquer un dispositif composite monolithique a semiconducteurs
IT977622B (it) Procedimento per produrre su un substrato uno strato a disegno di vetro fosfolicico particolarmente in applicazione a dispositivi semi conduttori
BE832374A (fr) Dispositif de contact pour une structure plane electroconductrice et procede pour la fabrication de ce dispositif
IT952392B (it) Perfezionamento nei dispositivi a semi conduttore per micro onde
AU463388B2 (en) Method for making semiconductor devices including base sheet resistivity determining step
CA958819A (en) Apparatus for aligning a mask with respect to a semiconductor substrate
FR2330147A1 (fr) Procede pour fabriquer un dispositif a semi-conducteurs
BE783938A (fr) Procede pour eliminer les proeminences sur une surface de semi-conducteur
IT1001108B (it) Metodo per realizzare sottili pellicole semiconduttrici amorfe
BE846378A (fr) Procede de fabrication de silicium a dopage

Legal Events

Date Code Title Description
ST Notification of lapse