FR2269175A1 - Capacitive semiconductor memory circuit - with silicon oxide layer on doped silicon substrate covered by insulating layer - Google Patents
Capacitive semiconductor memory circuit - with silicon oxide layer on doped silicon substrate covered by insulating layerInfo
- Publication number
- FR2269175A1 FR2269175A1 FR7512802A FR7512802A FR2269175A1 FR 2269175 A1 FR2269175 A1 FR 2269175A1 FR 7512802 A FR7512802 A FR 7512802A FR 7512802 A FR7512802 A FR 7512802A FR 2269175 A1 FR2269175 A1 FR 2269175A1
- Authority
- FR
- France
- Prior art keywords
- layer
- silicon oxide
- semiconductor memory
- memory circuit
- oxide layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 title abstract 4
- 229910052814 silicon oxide Inorganic materials 0.000 title abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 239000003990 capacitor Substances 0.000 abstract 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- PBZHKWVYRQRZQC-UHFFFAOYSA-N [Si+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O Chemical compound [Si+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O PBZHKWVYRQRZQC-UHFFFAOYSA-N 0.000 abstract 1
- 229920001296 polysiloxane Polymers 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors with potential-jump barrier or surface barrier
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19742420370 DE2420370A1 (de) | 1974-04-26 | 1974-04-26 | Speicherschaltung mit mnos-elementen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR2269175A1 true FR2269175A1 (en) | 1975-11-21 |
Family
ID=5914101
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7512802A Withdrawn FR2269175A1 (en) | 1974-04-26 | 1975-04-24 | Capacitive semiconductor memory circuit - with silicon oxide layer on doped silicon substrate covered by insulating layer |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS50155180A (fr) |
| BE (1) | BE828444A (fr) |
| DE (1) | DE2420370A1 (fr) |
| FR (1) | FR2269175A1 (fr) |
| IT (1) | IT1037412B (fr) |
| NL (1) | NL7504970A (fr) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5938655B2 (ja) * | 1979-05-14 | 1984-09-18 | 日本放送協会 | 半導体デイスクメモリ装置 |
| GB2072417B (en) * | 1980-03-19 | 1983-12-14 | Plessey Co Ltd | Semiconductor memory element |
-
1974
- 1974-04-26 DE DE19742420370 patent/DE2420370A1/de active Pending
-
1975
- 1975-04-18 IT IT2247875A patent/IT1037412B/it active
- 1975-04-24 JP JP50050178A patent/JPS50155180A/ja active Pending
- 1975-04-24 FR FR7512802A patent/FR2269175A1/fr not_active Withdrawn
- 1975-04-25 BE BE155826A patent/BE828444A/fr unknown
- 1975-04-25 NL NL7504970A patent/NL7504970A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| NL7504970A (nl) | 1975-10-28 |
| DE2420370A1 (de) | 1975-11-06 |
| BE828444A (fr) | 1975-08-18 |
| JPS50155180A (fr) | 1975-12-15 |
| IT1037412B (it) | 1979-11-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |