JPS5332682A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5332682A
JPS5332682A JP10663876A JP10663876A JPS5332682A JP S5332682 A JPS5332682 A JP S5332682A JP 10663876 A JP10663876 A JP 10663876A JP 10663876 A JP10663876 A JP 10663876A JP S5332682 A JPS5332682 A JP S5332682A
Authority
JP
Japan
Prior art keywords
semiconductor device
substrate
source
resistor
apply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10663876A
Other languages
Japanese (ja)
Inventor
Mitsuaki Ishikawa
Fujio Masuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10663876A priority Critical patent/JPS5332682A/en
Publication of JPS5332682A publication Critical patent/JPS5332682A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H01L27/0738—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with resistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To apply a desired potential difference between source and substrate by integrally providing a resistor between the source and substrate and making use of the voltage drop thereof.
JP10663876A 1976-09-08 1976-09-08 Semiconductor device Pending JPS5332682A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10663876A JPS5332682A (en) 1976-09-08 1976-09-08 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10663876A JPS5332682A (en) 1976-09-08 1976-09-08 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5332682A true JPS5332682A (en) 1978-03-28

Family

ID=14438648

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10663876A Pending JPS5332682A (en) 1976-09-08 1976-09-08 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5332682A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54139496A (en) * 1978-04-21 1979-10-29 Hitachi Ltd Mos semiconductor load element
EP0025155A2 (en) * 1979-08-29 1981-03-18 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54139496A (en) * 1978-04-21 1979-10-29 Hitachi Ltd Mos semiconductor load element
EP0025155A2 (en) * 1979-08-29 1981-03-18 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device

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