JPS561570A - Semiconductor switching device - Google Patents
Semiconductor switching deviceInfo
- Publication number
- JPS561570A JPS561570A JP7598479A JP7598479A JPS561570A JP S561570 A JPS561570 A JP S561570A JP 7598479 A JP7598479 A JP 7598479A JP 7598479 A JP7598479 A JP 7598479A JP S561570 A JPS561570 A JP S561570A
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- electrodes
- forming
- switching device
- groups
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 2
- 230000006870 function Effects 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 230000000737 periodic effect Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052959 stibnite Inorganic materials 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78681—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te
Abstract
PURPOSE:To provide a semiconductor switching device which has a switching function with a simple construction by forming a compound semiconductor layer made of metals of the Groups V and VI in the Periodic Table on an insulating substrate, forming source and drain electrodes thereon, and forming a gate electrode through an insulating layer in the intermediate therebetween. CONSTITUTION:A compound semiconductor layer 32 made of Sb2S3 represented by the metal of the Groups V2 and VI3 in the Periodic Table is formed on an insulating substrate 31, and aluminum source and drain electrodes 34 and 35 are ohmically coated at predetermined interval on the surface 33. Then, an SiO2 insulating layer 36 is formed over from between the electrodes 34 and 35 to partial surface of the electrode, and a gate electrode 37 made of aluminum is mounted thereon. In this manner, a voltage is applied to the gate electrode 37 to produce switching function between the other electrodes 34 and 35 for memory operation to be adapted for a semiconductor logic circuit or a memory circuit or the like.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7598479A JPS561570A (en) | 1979-06-15 | 1979-06-15 | Semiconductor switching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7598479A JPS561570A (en) | 1979-06-15 | 1979-06-15 | Semiconductor switching device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS561570A true JPS561570A (en) | 1981-01-09 |
Family
ID=13592028
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7598479A Pending JPS561570A (en) | 1979-06-15 | 1979-06-15 | Semiconductor switching device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS561570A (en) |
-
1979
- 1979-06-15 JP JP7598479A patent/JPS561570A/en active Pending
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