FR2254107A1 - Thyristor with surface emitter layer - has several sections over emitter-base pn-junction with different impurity concentrations - Google Patents

Thyristor with surface emitter layer - has several sections over emitter-base pn-junction with different impurity concentrations

Info

Publication number
FR2254107A1
FR2254107A1 FR7439650A FR7439650A FR2254107A1 FR 2254107 A1 FR2254107 A1 FR 2254107A1 FR 7439650 A FR7439650 A FR 7439650A FR 7439650 A FR7439650 A FR 7439650A FR 2254107 A1 FR2254107 A1 FR 2254107A1
Authority
FR
France
Prior art keywords
junction
thyristor
base layer
base
impurity concentrations
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7439650A
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ABB Norden Holding AB
Original Assignee
ASEA AB
Allmanna Svenska Elektriska AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASEA AB, Allmanna Svenska Elektriska AB filed Critical ASEA AB
Publication of FR2254107A1 publication Critical patent/FR2254107A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/192—Base regions of thyristors
    • H10D62/206—Cathode base regions of thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/148—Cathode regions of thyristors

Landscapes

  • Thyristors (AREA)
FR7439650A 1973-12-05 1974-12-04 Thyristor with surface emitter layer - has several sections over emitter-base pn-junction with different impurity concentrations Withdrawn FR2254107A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE7316408A SE378479B (enrdf_load_stackoverflow) 1973-12-05 1973-12-05

Publications (1)

Publication Number Publication Date
FR2254107A1 true FR2254107A1 (en) 1975-07-04

Family

ID=20319280

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7439650A Withdrawn FR2254107A1 (en) 1973-12-05 1974-12-04 Thyristor with surface emitter layer - has several sections over emitter-base pn-junction with different impurity concentrations

Country Status (3)

Country Link
DE (1) DE2455283A1 (enrdf_load_stackoverflow)
FR (1) FR2254107A1 (enrdf_load_stackoverflow)
SE (1) SE378479B (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2339256A1 (fr) * 1976-01-22 1977-08-19 Westinghouse Electric Corp Redresseur a commutation inverse
EP0544397A1 (en) * 1991-11-27 1993-06-02 Texas Instruments Incorporated A PNPN semiconductor device
RU2176296C2 (ru) * 1997-03-28 2001-11-27 Сосьете Насьональ Д'Этюд е де Конструксьон де Мотор Д'Авиасьон Способ изготовления кольцевых волокнистых каркасов, в частности, для получения изделий из композитного материала

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2339256A1 (fr) * 1976-01-22 1977-08-19 Westinghouse Electric Corp Redresseur a commutation inverse
EP0544397A1 (en) * 1991-11-27 1993-06-02 Texas Instruments Incorporated A PNPN semiconductor device
RU2176296C2 (ru) * 1997-03-28 2001-11-27 Сосьете Насьональ Д'Этюд е де Конструксьон де Мотор Д'Авиасьон Способ изготовления кольцевых волокнистых каркасов, в частности, для получения изделий из композитного материала

Also Published As

Publication number Publication date
DE2455283A1 (de) 1975-06-12
SE7316408L (enrdf_load_stackoverflow) 1975-06-06
SE378479B (enrdf_load_stackoverflow) 1975-09-01

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Legal Events

Date Code Title Description
RE Withdrawal of published application