FR2212647B1 - - Google Patents
Info
- Publication number
- FR2212647B1 FR2212647B1 FR7342443A FR7342443A FR2212647B1 FR 2212647 B1 FR2212647 B1 FR 2212647B1 FR 7342443 A FR7342443 A FR 7342443A FR 7342443 A FR7342443 A FR 7342443A FR 2212647 B1 FR2212647 B1 FR 2212647B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/681—Floating-gate IGFETs having only two programming levels
- H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
- H10D30/686—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection using hot carriers produced by avalanche breakdown of PN junctions, e.g. floating gate avalanche injection MOS [FAMOS]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US31942572A | 1972-12-29 | 1972-12-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2212647A1 FR2212647A1 (enExample) | 1974-07-26 |
| FR2212647B1 true FR2212647B1 (enExample) | 1977-09-30 |
Family
ID=23242185
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7342443A Expired FR2212647B1 (enExample) | 1972-12-29 | 1973-11-20 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3797000A (enExample) |
| JP (1) | JPS525234B2 (enExample) |
| CA (1) | CA1019441A (enExample) |
| DE (1) | DE2356275C2 (enExample) |
| FR (1) | FR2212647B1 (enExample) |
| GB (1) | GB1445450A (enExample) |
| IT (1) | IT1001098B (enExample) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4004159A (en) * | 1973-05-18 | 1977-01-18 | Sanyo Electric Co., Ltd. | Electrically reprogrammable nonvolatile floating gate semi-conductor memory device and method of operation |
| US4123771A (en) * | 1973-09-21 | 1978-10-31 | Tokyo Shibaura Electric Co., Ltd. | Nonvolatile semiconductor memory |
| US3838405A (en) * | 1973-10-03 | 1974-09-24 | Ibm | Non-volatile diode cross point memory array |
| DE2643987C2 (de) * | 1974-09-20 | 1984-03-29 | Siemens AG, 1000 Berlin und 8000 München | n-Kanal-Speicher-FET |
| DE2643932C2 (de) * | 1974-09-20 | 1984-02-16 | Siemens AG, 1000 Berlin und 8000 München | n-Kanal-Speicher-FET |
| DE2505824C3 (de) * | 1975-02-12 | 1982-04-15 | Siemens AG, 1000 Berlin und 8000 München | n-Kanal-Speicher-FET |
| DE2513207C2 (de) * | 1974-09-20 | 1982-07-01 | Siemens AG, 1000 Berlin und 8000 München | n-Kanal-Speicher-FET |
| DE2445137C3 (de) * | 1974-09-20 | 1981-02-26 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Betrieb eines n-Kanal-Speicher-FET, n-Kanal-Speicher-FET zur Ausübung des Verfahrens und Anwendung des Verfahrens auf die n-Kanal-Speicher-FETs einer Speichermatrix |
| DE2525062C2 (de) | 1975-06-05 | 1983-02-17 | Siemens AG, 1000 Berlin und 8000 München | Matrixanordnung aus n-Kanal-Speicher-FET |
| DE2505816C3 (de) * | 1974-09-20 | 1982-04-22 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Betrieb eines n-Kanal-Speicher-FET, n-Kanal-Speicher-FET zur Ausübung des Verfahrens und Anwendung des Verfahrens auf die n-Kanal-Speicher-FETs einer Speichermatrix |
| DE2812049C2 (de) * | 1974-09-20 | 1982-05-27 | Siemens AG, 1000 Berlin und 8000 München | n-Kanal-Speicher-FET |
| DE2638730C2 (de) * | 1974-09-20 | 1982-10-28 | Siemens AG, 1000 Berlin und 8000 München | n-Kanal-Speicher-FET, Verfahren zum Entladen des Speichergate des n-Kanal-Speicher-FET und Verwendung des n-Kanal-Speicher-FET |
| DE2560220C2 (de) * | 1975-03-25 | 1982-11-25 | Siemens AG, 1000 Berlin und 8000 München | n-Kanal-Speicher-FET |
| FR2307357A1 (fr) * | 1975-04-11 | 1976-11-05 | Thomson Csf | Structure monolithique de stockage de charges electriques, procede de mise en charge de cette structure et composants electroniques d'application |
| US4115914A (en) * | 1976-03-26 | 1978-09-26 | Hughes Aircraft Company | Electrically erasable non-volatile semiconductor memory |
| US4127900A (en) * | 1976-10-29 | 1978-11-28 | Massachusetts Institute Of Technology | Reading capacitor memories with a variable voltage ramp |
| US4161039A (en) * | 1976-12-15 | 1979-07-10 | Siemens Aktiengesellschaft | N-Channel storage FET |
| US4099196A (en) * | 1977-06-29 | 1978-07-04 | Intel Corporation | Triple layer polysilicon cell |
| US4145702A (en) * | 1977-07-05 | 1979-03-20 | Burroughs Corporation | Electrically programmable read-only-memory device |
| US4250206A (en) * | 1978-12-11 | 1981-02-10 | Texas Instruments Incorporated | Method of making non-volatile semiconductor memory elements |
| US5106772A (en) * | 1990-01-09 | 1992-04-21 | Intel Corporation | Method for improving the electrical erase characteristics of floating gate memory cells by immediately depositing a protective polysilicon layer following growth of the tunnel or gate oxide |
| JP3878681B2 (ja) | 1995-06-15 | 2007-02-07 | 株式会社ルネサステクノロジ | 不揮発性半導体記憶装置 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3500142A (en) * | 1967-06-05 | 1970-03-10 | Bell Telephone Labor Inc | Field effect semiconductor apparatus with memory involving entrapment of charge carriers |
| DE2201028C3 (de) * | 1971-01-15 | 1981-07-09 | Intel Corp., Mountain View, Calif. | Verfahren zum Betrieb eines Feldeffekttransistors und Feldeffekttransistor zur Ausübung dieses Verfahrens |
-
1972
- 1972-12-29 US US00319425A patent/US3797000A/en not_active Expired - Lifetime
-
1973
- 1973-11-10 DE DE2356275A patent/DE2356275C2/de not_active Expired
- 1973-11-15 JP JP12782573A patent/JPS525234B2/ja not_active Expired
- 1973-11-16 CA CA186,057A patent/CA1019441A/en not_active Expired
- 1973-11-20 FR FR7342443A patent/FR2212647B1/fr not_active Expired
- 1973-11-28 IT IT41017/73A patent/IT1001098B/it active
- 1973-11-29 GB GB5536073A patent/GB1445450A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| IT1001098B (it) | 1976-04-20 |
| DE2356275A1 (de) | 1974-07-04 |
| CA1019441A (en) | 1977-10-18 |
| JPS525234B2 (enExample) | 1977-02-10 |
| GB1445450A (en) | 1976-08-11 |
| FR2212647A1 (enExample) | 1974-07-26 |
| JPS4998974A (enExample) | 1974-09-19 |
| US3797000A (en) | 1974-03-12 |
| DE2356275C2 (de) | 1984-10-04 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |