FR1498863A - Procédés de pulvérisation cathodique pour le dépôt de pellicules minces - Google Patents
Procédés de pulvérisation cathodique pour le dépôt de pellicules mincesInfo
- Publication number
- FR1498863A FR1498863A FR8112A FR06008112A FR1498863A FR 1498863 A FR1498863 A FR 1498863A FR 8112 A FR8112 A FR 8112A FR 06008112 A FR06008112 A FR 06008112A FR 1498863 A FR1498863 A FR 1498863A
- Authority
- FR
- France
- Prior art keywords
- deposition
- thin films
- sputtering processes
- sputtering
- processes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000151 deposition Methods 0.000 title 1
- 230000008021 deposition Effects 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 238000004544 sputter deposition Methods 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/36—Gas-filled discharge tubes for cleaning surfaces while plating with ions of materials introduced into the discharge, e.g. introduced by evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
- H01C17/12—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Toxicology (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US507729A US3400066A (en) | 1965-11-15 | 1965-11-15 | Sputtering processes for depositing thin films of controlled thickness |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1498863A true FR1498863A (fr) | 1967-10-20 |
Family
ID=24019872
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8112A Expired FR1498863A (fr) | 1965-11-15 | 1966-11-02 | Procédés de pulvérisation cathodique pour le dépôt de pellicules minces |
Country Status (9)
Country | Link |
---|---|
US (1) | US3400066A (fr) |
BE (1) | BE688958A (fr) |
CH (1) | CH455441A (fr) |
DE (1) | DE1515308B2 (fr) |
ES (1) | ES333127A1 (fr) |
FR (1) | FR1498863A (fr) |
GB (1) | GB1091267A (fr) |
NL (1) | NL152029B (fr) |
SE (1) | SE330302B (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2569000A1 (fr) * | 1984-08-10 | 1986-02-14 | Centre Nat Rech Scient | Procede et appareils pour le controle in situ de l'epaisseur de couches ultraminces deposees par pulverisation ionique |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1474973A (fr) * | 1966-02-16 | 1967-03-31 | Radiotechnique Coprim Rtc | Procédé de fabrication d'une couche de contact pour dispositifs semi-conducteurs et produits obtenus |
US3506556A (en) * | 1968-02-28 | 1970-04-14 | Ppg Industries Inc | Sputtering of metal oxide films in the presence of hydrogen and oxygen |
DE2126887C3 (de) * | 1971-05-29 | 1981-11-19 | Ibm Deutschland Gmbh, 7000 Stuttgart | Niederschlagen magnetisierbarer Schichten durch Kathodenzerstäubung |
US3912612A (en) * | 1972-07-14 | 1975-10-14 | Westinghouse Electric Corp | Method for making thin film superconductors |
US4021277A (en) * | 1972-12-07 | 1977-05-03 | Sprague Electric Company | Method of forming thin film resistor |
US3856647A (en) * | 1973-05-15 | 1974-12-24 | Ibm | Multi-layer control or stress in thin films |
US4043888A (en) * | 1973-07-30 | 1977-08-23 | Westinghouse Electric Corporation | Superconductive thin films having transition temperature substantially above the bulk materials |
US3866041A (en) * | 1973-10-23 | 1975-02-11 | Allis Chalmers | Method and apparatus for evaluating the gas content of materials |
USRE29947E (en) * | 1974-02-12 | 1979-03-27 | U.S. Philips Corporation | Semiconductor pattern delineation by sputter etching process |
NL7401859A (nl) * | 1974-02-12 | 1975-08-14 | Philips Nv | Werkwijze voor het vervaardigen van een patroon en of meer lagen op een ondergrond door selijk verwijderen van deze laag of lagen sputteretsen en voorwerpen, in het bijzon- alfgeleiderinrichtingen, vervaardigd met ssing van deze werkwijze. |
US4129848A (en) * | 1975-09-03 | 1978-12-12 | Raytheon Company | Platinum film resistor device |
US4204935A (en) * | 1976-02-10 | 1980-05-27 | Resista Fabrik Elektrischer Widerstande G.M.B.H. | Thin-film resistor and process for the production thereof |
US4205299A (en) * | 1976-02-10 | 1980-05-27 | Jurgen Forster | Thin film resistor |
US4169032A (en) * | 1978-05-24 | 1979-09-25 | International Business Machines Corporation | Method of making a thin film thermal print head |
US4310380A (en) * | 1980-04-07 | 1982-01-12 | Bell Telephone Laboratories, Incorporated | Plasma etching of silicon |
DE3107914A1 (de) * | 1981-03-02 | 1982-09-16 | Leybold-Heraeus GmbH, 5000 Köln | Verfahren und vorrichtung zum beschichten von formteilen durch katodenzerstaeubung |
CA1155798A (fr) * | 1981-03-30 | 1983-10-25 | Shmuel Maniv | Methode et dispositif de deposition par reaction |
DE3426795A1 (de) * | 1984-07-20 | 1986-01-23 | Battelle-Institut E.V., 6000 Frankfurt | Verfahren zur herstellung von hochverschleissfesten titannitrid-schichten |
JPH02217467A (ja) * | 1989-02-17 | 1990-08-30 | Pioneer Electron Corp | 対向ターゲット型スパッタリング装置 |
US5182420A (en) * | 1989-04-25 | 1993-01-26 | Cray Research, Inc. | Method of fabricating metallized chip carriers from wafer-shaped substrates |
US4949453A (en) * | 1989-06-15 | 1990-08-21 | Cray Research, Inc. | Method of making a chip carrier with terminating resistive elements |
US5258576A (en) * | 1989-06-15 | 1993-11-02 | Cray Research, Inc. | Integrated circuit chip carrier lid |
USRE34395E (en) * | 1989-06-15 | 1993-10-05 | Cray Research, Inc. | Method of making a chip carrier with terminating resistive elements |
US5122620A (en) * | 1989-06-15 | 1992-06-16 | Cray Research Inc. | Chip carrier with terminating resistive elements |
US5039570A (en) * | 1990-04-12 | 1991-08-13 | Planar Circuit Technologies, Inc. | Resistive laminate for printed circuit boards, method and apparatus for forming the same |
US6703666B1 (en) * | 1999-07-14 | 2004-03-09 | Agere Systems Inc. | Thin film resistor device and a method of manufacture therefor |
CN112259455B (zh) * | 2020-10-19 | 2024-01-26 | 扬州扬杰电子科技股份有限公司 | 一种改善带钝化层结构的Ag面产品金属残留的方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3336154A (en) * | 1963-12-20 | 1967-08-15 | Sperry Rand Corp | Testing apparatus and method |
-
1965
- 1965-11-15 US US507729A patent/US3400066A/en not_active Expired - Lifetime
-
1966
- 1966-10-17 GB GB46274/66A patent/GB1091267A/en not_active Expired
- 1966-10-27 BE BE688958D patent/BE688958A/xx unknown
- 1966-11-02 FR FR8112A patent/FR1498863A/fr not_active Expired
- 1966-11-07 ES ES0333127A patent/ES333127A1/es not_active Expired
- 1966-11-12 DE DE1515308A patent/DE1515308B2/de not_active Withdrawn
- 1966-11-14 NL NL666615992A patent/NL152029B/xx unknown
- 1966-11-15 SE SE15633/66A patent/SE330302B/xx unknown
- 1966-11-15 CH CH1639666A patent/CH455441A/de unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2569000A1 (fr) * | 1984-08-10 | 1986-02-14 | Centre Nat Rech Scient | Procede et appareils pour le controle in situ de l'epaisseur de couches ultraminces deposees par pulverisation ionique |
Also Published As
Publication number | Publication date |
---|---|
NL6615992A (fr) | 1967-05-16 |
ES333127A1 (es) | 1967-12-01 |
BE688958A (fr) | 1967-03-31 |
CH455441A (de) | 1968-07-15 |
SE330302B (fr) | 1970-11-09 |
DE1515308A1 (de) | 1969-09-11 |
GB1091267A (en) | 1967-11-15 |
US3400066A (en) | 1968-09-03 |
DE1515308B2 (de) | 1975-03-27 |
NL152029B (nl) | 1977-01-17 |
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