FR1452523A - Procédé de dépôt de pellicules par projection cathodique - Google Patents

Procédé de dépôt de pellicules par projection cathodique

Info

Publication number
FR1452523A
FR1452523A FR37093A FR37093A FR1452523A FR 1452523 A FR1452523 A FR 1452523A FR 37093 A FR37093 A FR 37093A FR 37093 A FR37093 A FR 37093A FR 1452523 A FR1452523 A FR 1452523A
Authority
FR
France
Prior art keywords
deposition process
film deposition
projection film
cathodic
cathodic projection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR37093A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TRW Semiconductors Inc
Original Assignee
TRW Semiconductors Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TRW Semiconductors Inc filed Critical TRW Semiconductors Inc
Priority to FR37093A priority Critical patent/FR1452523A/fr
Application granted granted Critical
Publication of FR1452523A publication Critical patent/FR1452523A/fr
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
FR37093A 1965-11-03 1965-11-03 Procédé de dépôt de pellicules par projection cathodique Expired FR1452523A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR37093A FR1452523A (fr) 1965-11-03 1965-11-03 Procédé de dépôt de pellicules par projection cathodique

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR37093A FR1452523A (fr) 1965-11-03 1965-11-03 Procédé de dépôt de pellicules par projection cathodique

Publications (1)

Publication Number Publication Date
FR1452523A true FR1452523A (fr) 1966-02-25

Family

ID=8591718

Family Applications (1)

Application Number Title Priority Date Filing Date
FR37093A Expired FR1452523A (fr) 1965-11-03 1965-11-03 Procédé de dépôt de pellicules par projection cathodique

Country Status (1)

Country Link
FR (1) FR1452523A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3507766A (en) * 1968-01-19 1970-04-21 Texas Instruments Inc Method of forming a heterogeneous composite insulating layer of silicon dioxide in multilevel integrated circuits

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3507766A (en) * 1968-01-19 1970-04-21 Texas Instruments Inc Method of forming a heterogeneous composite insulating layer of silicon dioxide in multilevel integrated circuits

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