FR1172044A - Procédé de fabrication de dispositifs semi-conducteurs - Google Patents

Procédé de fabrication de dispositifs semi-conducteurs

Info

Publication number
FR1172044A
FR1172044A FR1172044DA FR1172044A FR 1172044 A FR1172044 A FR 1172044A FR 1172044D A FR1172044D A FR 1172044DA FR 1172044 A FR1172044 A FR 1172044A
Authority
FR
France
Prior art keywords
semiconductor device
manufacturing process
device manufacturing
semiconductor
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US542131A external-priority patent/US2898247A/en
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of FR1172044A publication Critical patent/FR1172044A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C12/00—Solid state diffusion of at least one non-metal element other than silicon and at least one metal element or silicon into metallic material surfaces
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/80—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Bipolar Transistors (AREA)
  • Weting (AREA)
FR1172044D 1955-10-24 1956-10-23 Procédé de fabrication de dispositifs semi-conducteurs Expired FR1172044A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US542131A US2898247A (en) 1955-10-24 1955-10-24 Fabrication of diffused junction semi-conductor devices
US73984358A 1958-06-04 1958-06-04

Publications (1)

Publication Number Publication Date
FR1172044A true FR1172044A (fr) 1959-02-04

Family

ID=27066925

Family Applications (2)

Application Number Title Priority Date Filing Date
FR1172044D Expired FR1172044A (fr) 1955-10-24 1956-10-23 Procédé de fabrication de dispositifs semi-conducteurs
FR788222A Expired FR75143E (fr) 1955-10-24 1959-03-03 Procédé de fabrication de dispositifs semi-conducteurs

Family Applications After (1)

Application Number Title Priority Date Filing Date
FR788222A Expired FR75143E (fr) 1955-10-24 1959-03-03 Procédé de fabrication de dispositifs semi-conducteurs

Country Status (4)

Country Link
DE (2) DE1163458B (enrdf_load_stackoverflow)
FR (2) FR1172044A (enrdf_load_stackoverflow)
GB (2) GB844692A (enrdf_load_stackoverflow)
NL (2) NL109064C (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1130932B (de) * 1959-05-29 1962-06-07 Shockley Transistor Corp Verfahren zur Herstellung kleinflaechiger pn-UEbergaenge in Halbleiter-koerpern von einem Leitfaehigkeitstyp von Halbleiteranordnungen, z. B. Dioden oder Transistoren

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE509317A (enrdf_load_stackoverflow) * 1951-03-07 1900-01-01
DE885756C (de) * 1951-10-08 1953-06-25 Telefunken Gmbh Verfahren zur Herstellung von p- oder n-leitenden Schichten
US2823149A (en) * 1953-10-27 1958-02-11 Sprague Electric Co Process of forming barrier layers in crystalline bodies
DE1040697B (de) * 1955-03-30 1958-10-09 Siemens Ag Verfahren zur Dotierung von Halbleiterkoerpern

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1130932B (de) * 1959-05-29 1962-06-07 Shockley Transistor Corp Verfahren zur Herstellung kleinflaechiger pn-UEbergaenge in Halbleiter-koerpern von einem Leitfaehigkeitstyp von Halbleiteranordnungen, z. B. Dioden oder Transistoren

Also Published As

Publication number Publication date
GB843168A (en) 1960-08-04
DE1223814B (de) 1966-09-01
FR75143E (fr) 1961-03-13
GB844692A (en) 1960-08-17
DE1163458B (de) 1964-02-20
NL109064C (enrdf_load_stackoverflow)
NL211606A (enrdf_load_stackoverflow)

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