GB844692A - Improvements in the formation of junctions in semiconductor bodies - Google Patents
Improvements in the formation of junctions in semiconductor bodiesInfo
- Publication number
- GB844692A GB844692A GB3215756A GB3215756A GB844692A GB 844692 A GB844692 A GB 844692A GB 3215756 A GB3215756 A GB 3215756A GB 3215756 A GB3215756 A GB 3215756A GB 844692 A GB844692 A GB 844692A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- impurity
- depth
- semi
- vapour
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 230000015572 biosynthetic process Effects 0.000 title abstract 2
- 239000010410 layer Substances 0.000 abstract 12
- 239000012535 impurity Substances 0.000 abstract 7
- 239000000463 material Substances 0.000 abstract 5
- 230000035515 penetration Effects 0.000 abstract 3
- 229910052785 arsenic Inorganic materials 0.000 abstract 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 229910052738 indium Inorganic materials 0.000 abstract 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- 239000012190 activator Substances 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
- 238000007738 vacuum evaporation Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C12/00—Solid state diffusion of at least one non-metal element other than silicon and at least one metal element or silicon into metallic material surfaces
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/80—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Weting (AREA)
Abstract
844,692. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORPORATION. Oct. 22, 1956 [Oct. 24, 1955], No. 32157/56. Class 37. A method of making a semi-conductor device comprises the following steps; coating a surface of a semi-conductor, body with a layer of material which reacts chemically or physically with an activator impurity; heating the coated body in a vapour containing the impurity to react the impurity and layer material and to diffuse the impurity into the body to a depth which is greater beneath the layer; and then removing material from the body to a depth exceeding the depth of penetration of impurity on areas not covered by the layer but less than the penetration depth under the layer. In the embodiment indium layers 2, 3 are deposited, e.g. by vacuum evaporation through a mask, on to opposite faces of a P type germanium wafer containing indium or gallium, and the wafer then heated for 10 hours at 800‹ C. in a reducing atmosphere containing 10<SP>16</SP>-10<SP>18</SP> atoms/cc. of arsenic. As a result of this treatment an N type arsenic doped layer of the form shown in Fig. 1 is produced. A surface layer of uniform thickness is then removed from the wafer by abrading or chemical or electolytic etching to expose the P type material as shown in Fig. 2 leaving islands 6, 5 of N type material which serve as emitter and collector zones in the finished transistor. Base emitter, and collector connections 8, 7, 9 are then soldered to the body as shown. A PNP transistor is made by a similar method but using an element from Group V for the layer, and a vapour comprising an element from Group III. The greater depth of diffusion beneath the layer is thought to be due to the fact that the concentration of impurity atoms is greater in the layer than in the surrounding atmosphere and to the intimate contact between the layer and semi-conductor. The impurity vapour pressure must be well below the equilibrium vapour pressure to prevent formation of a molten surface alloy in the uncoated regions which would increase the penetration in these regions. To permit accurate control of the junction areas the layer or the product of its reaction with the vapour should remains solid during the diffusion process.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US542131A US2898247A (en) | 1955-10-24 | 1955-10-24 | Fabrication of diffused junction semi-conductor devices |
| US73984358A | 1958-06-04 | 1958-06-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB844692A true GB844692A (en) | 1960-08-17 |
Family
ID=27066925
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3215756A Expired GB844692A (en) | 1955-10-24 | 1956-10-22 | Improvements in the formation of junctions in semiconductor bodies |
| GB733759A Expired GB843168A (en) | 1955-10-24 | 1959-03-03 | Improvements in methods of producing semiconductor bodies for transistors and the like |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB733759A Expired GB843168A (en) | 1955-10-24 | 1959-03-03 | Improvements in methods of producing semiconductor bodies for transistors and the like |
Country Status (4)
| Country | Link |
|---|---|
| DE (2) | DE1163458B (en) |
| FR (2) | FR1172044A (en) |
| GB (2) | GB844692A (en) |
| NL (2) | NL211606A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2937114A (en) * | 1959-05-29 | 1960-05-17 | Shockley Transistor Corp | Semiconductive device and method |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL99536C (en) * | 1951-03-07 | 1900-01-01 | ||
| DE885756C (en) * | 1951-10-08 | 1953-06-25 | Telefunken Gmbh | Process for the production of p- or n-conducting layers |
| US2823149A (en) * | 1953-10-27 | 1958-02-11 | Sprague Electric Co | Process of forming barrier layers in crystalline bodies |
| DE1040697B (en) * | 1955-03-30 | 1958-10-09 | Siemens Ag | Method for doping semiconductor bodies |
-
0
- NL NL109064D patent/NL109064C/xx active
- NL NL211606D patent/NL211606A/xx unknown
-
1956
- 1956-10-18 DE DEI12339A patent/DE1163458B/en active Pending
- 1956-10-22 GB GB3215756A patent/GB844692A/en not_active Expired
- 1956-10-23 FR FR1172044D patent/FR1172044A/en not_active Expired
-
1959
- 1959-03-03 DE DEJ16099A patent/DE1223814B/en active Pending
- 1959-03-03 GB GB733759A patent/GB843168A/en not_active Expired
- 1959-03-03 FR FR788222A patent/FR75143E/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB843168A (en) | 1960-08-04 |
| FR1172044A (en) | 1959-02-04 |
| NL211606A (en) | |
| FR75143E (en) | 1961-03-13 |
| DE1223814B (en) | 1966-09-01 |
| NL109064C (en) | |
| DE1163458B (en) | 1964-02-20 |
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