GB844692A - Improvements in the formation of junctions in semiconductor bodies - Google Patents
Improvements in the formation of junctions in semiconductor bodiesInfo
- Publication number
- GB844692A GB844692A GB32157/56A GB3215756A GB844692A GB 844692 A GB844692 A GB 844692A GB 32157/56 A GB32157/56 A GB 32157/56A GB 3215756 A GB3215756 A GB 3215756A GB 844692 A GB844692 A GB 844692A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- impurity
- depth
- semi
- vapour
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 230000015572 biosynthetic process Effects 0.000 title abstract 2
- 239000010410 layer Substances 0.000 abstract 12
- 239000012535 impurity Substances 0.000 abstract 7
- 239000000463 material Substances 0.000 abstract 5
- 230000035515 penetration Effects 0.000 abstract 3
- 229910052785 arsenic Inorganic materials 0.000 abstract 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 229910052738 indium Inorganic materials 0.000 abstract 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- 239000012190 activator Substances 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
- 238000007738 vacuum evaporation Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C12/00—Solid state diffusion of at least one non-metal element other than silicon and at least one metal element or silicon into metallic material surfaces
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/80—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Bipolar Transistors (AREA)
- Weting (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US542131A US2898247A (en) | 1955-10-24 | 1955-10-24 | Fabrication of diffused junction semi-conductor devices |
| US73984358A | 1958-06-04 | 1958-06-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB844692A true GB844692A (en) | 1960-08-17 |
Family
ID=27066925
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB32157/56A Expired GB844692A (en) | 1955-10-24 | 1956-10-22 | Improvements in the formation of junctions in semiconductor bodies |
| GB7337/59A Expired GB843168A (en) | 1955-10-24 | 1959-03-03 | Improvements in methods of producing semiconductor bodies for transistors and the like |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB7337/59A Expired GB843168A (en) | 1955-10-24 | 1959-03-03 | Improvements in methods of producing semiconductor bodies for transistors and the like |
Country Status (4)
| Country | Link |
|---|---|
| DE (2) | DE1163458B (enrdf_load_stackoverflow) |
| FR (2) | FR1172044A (enrdf_load_stackoverflow) |
| GB (2) | GB844692A (enrdf_load_stackoverflow) |
| NL (2) | NL211606A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2937114A (en) * | 1959-05-29 | 1960-05-17 | Shockley Transistor Corp | Semiconductive device and method |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE509317A (enrdf_load_stackoverflow) * | 1951-03-07 | 1900-01-01 | ||
| DE885756C (de) * | 1951-10-08 | 1953-06-25 | Telefunken Gmbh | Verfahren zur Herstellung von p- oder n-leitenden Schichten |
| US2823149A (en) * | 1953-10-27 | 1958-02-11 | Sprague Electric Co | Process of forming barrier layers in crystalline bodies |
| DE1040697B (de) * | 1955-03-30 | 1958-10-09 | Siemens Ag | Verfahren zur Dotierung von Halbleiterkoerpern |
-
0
- NL NL109064D patent/NL109064C/xx active
- NL NL211606D patent/NL211606A/xx unknown
-
1956
- 1956-10-18 DE DEI12339A patent/DE1163458B/de active Pending
- 1956-10-22 GB GB32157/56A patent/GB844692A/en not_active Expired
- 1956-10-23 FR FR1172044D patent/FR1172044A/fr not_active Expired
-
1959
- 1959-03-03 GB GB7337/59A patent/GB843168A/en not_active Expired
- 1959-03-03 FR FR788222A patent/FR75143E/fr not_active Expired
- 1959-03-03 DE DEJ16099A patent/DE1223814B/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR1172044A (fr) | 1959-02-04 |
| GB843168A (en) | 1960-08-04 |
| FR75143E (fr) | 1961-03-13 |
| DE1163458B (de) | 1964-02-20 |
| DE1223814B (de) | 1966-09-01 |
| NL211606A (enrdf_load_stackoverflow) | |
| NL109064C (enrdf_load_stackoverflow) |
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