FR1077707A - Circuits bistables contenant des transistors - Google Patents

Circuits bistables contenant des transistors

Info

Publication number
FR1077707A
FR1077707A FR1077707DA FR1077707A FR 1077707 A FR1077707 A FR 1077707A FR 1077707D A FR1077707D A FR 1077707DA FR 1077707 A FR1077707 A FR 1077707A
Authority
FR
France
Prior art keywords
bistable circuits
circuits containing
containing transistors
transistors
bistable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of FR1077707A publication Critical patent/FR1077707A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/313—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/35—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
  • Control Of Electrical Variables (AREA)
  • Amplifiers (AREA)
FR1077707D 1952-07-22 1953-04-14 Circuits bistables contenant des transistors Expired FR1077707A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US300220A US2655609A (en) 1952-07-22 1952-07-22 Bistable circuits, including transistors

Publications (1)

Publication Number Publication Date
FR1077707A true FR1077707A (fr) 1954-11-10

Family

ID=23158200

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1077707D Expired FR1077707A (fr) 1952-07-22 1953-04-14 Circuits bistables contenant des transistors

Country Status (5)

Country Link
US (1) US2655609A (fr)
BE (1) BE521569A (fr)
DE (1) DE919125C (fr)
FR (1) FR1077707A (fr)
GB (1) GB753014A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1045459B (de) * 1956-02-27 1958-12-04 Westinghouse Electric Corp Astabile Kippschaltung mit zwei Transistoren zur Erzeugung von Impulsen
DE1058554B (de) * 1955-09-07 1959-06-04 Western Electric Co Bistabiler Multivibrator

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US2899571A (en) * 1959-08-11 Switching circuit
DE1075154B (de) * 1960-02-11 Standard Elektrik Lorenz Aktiengesellschaft, Stuttgart-Zufienhausen Polarisiertes elektronisches Relais zur Umwandlung einer Stcuerspannung in Doppelstromzeichen
US2899569A (en) * 1959-08-11 Diode circuits
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US2844739A (en) * 1953-07-01 1958-07-22 Rca Corp Sawtooth current wave generator
GB770200A (en) * 1953-07-24 1957-03-20 Rca Corp Temperature controlled semi-conductor bias circuit
DE975754C (de) * 1953-09-18 1963-06-12 Siemens Ag Anordnung zur Entdaempfung von UEbertragungsleitungen mittels negativer Widerstaendeunter Verwendung von Halbleiterverstaerkern
US2894150A (en) * 1953-10-07 1959-07-07 Avco Mfg Corp Transistor signal translating circuit
BE532755A (fr) * 1953-10-24
NL191906A (fr) * 1953-10-29
NL192335A (fr) * 1953-12-18
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GB771625A (en) * 1953-12-31 1957-04-03 Ibm Electric charge storage apparatus
US2884545A (en) * 1954-03-17 1959-04-28 Gen Precision Lab Inc Transistor protection circuit
US2900530A (en) * 1954-04-16 1959-08-18 Vitro Corp Of America Transistor protection circuitry
BE539180A (fr) * 1954-06-21
US2850694A (en) * 1954-07-07 1958-09-02 Bell Telephone Labor Inc Current supply apparatus for load voltage regulation
US3036226A (en) * 1958-12-15 1962-05-22 Ibm Negative resistance semiconductor circuit utilizing four-layer transistor
NL190623A (fr) * 1954-09-08
US2871378A (en) * 1954-09-24 1959-01-27 Rca Corp Stepwave generator
US2891172A (en) * 1954-09-30 1959-06-16 Ibm Switching circuits employing junction transistors
US2831113A (en) * 1954-10-14 1958-04-15 Bell Telephone Labor Inc Transistor relaxation circuits
US2901639A (en) * 1954-12-31 1959-08-25 Rca Corp Semi-conductor multivibrator circuit
US2825821A (en) * 1955-01-03 1958-03-04 Ibm Latch circuit
US2864062A (en) * 1955-02-15 1958-12-09 Gen Electric Negative resistance using transistors
US2820155A (en) * 1955-03-09 1958-01-14 Bell Telephone Labor Inc Negative impedance bistable signaloperated switch
US2853631A (en) * 1955-03-09 1958-09-23 Bell Telephone Labor Inc Signal-operated switch
US2926267A (en) * 1955-03-10 1960-02-23 Itt Direct-current transistor switching amplifier circuit
DE1025450B (de) * 1955-03-26 1958-03-06 Dr Phil Habil Oskar Vierling Untersetzerschaltung fuer periodische Impulse unter Verwendung einer mit zwei Flaechentransistoren gebildeten Kippschaltung
BE546329A (fr) * 1955-04-20
US2840728A (en) * 1955-04-26 1958-06-24 Bell Telephone Labor Inc Non-saturating transistor circuits
US2966979A (en) * 1955-05-11 1961-01-03 Clark Controller Co Transistor control systems
US3098158A (en) * 1955-06-06 1963-07-16 Thompson Ramo Wooldridge Inc Multivibrator circuits employing voltage break-down devices
US2831984A (en) * 1955-06-16 1958-04-22 Bell Telephone Labor Inc Crosspoint switching circuit
BE549248A (fr) * 1955-07-05
US3113217A (en) * 1955-08-03 1963-12-03 Sylvania Electric Prod Trigger circuits employing transistors of complementary characteristics
US2916636A (en) * 1955-08-09 1959-12-08 Thompson Ramo Wooldridge Inc Current feedback multivibrator utilizing transistors
US2916637A (en) * 1955-08-09 1959-12-08 Thompson Ramo Wooldridge Inc Multivibrator circuits with improved power-frequency capacity
US3011067A (en) * 1955-10-25 1961-11-28 Purdue Research Foundation Semiconductor rectifying device having non-rectifying electrodes
US2904641A (en) * 1955-11-29 1959-09-15 Itt Negative-impedance repeater using a transistor amplifier
US2841712A (en) * 1956-02-27 1958-07-01 Westinghouse Electric Corp Transistor sweep generator
US2840727A (en) * 1956-03-27 1958-06-24 Westinghouse Electric Corp Self-locking transistor switching circuit
DE1057173B (de) * 1956-03-27 1959-05-14 Westinghouse Electric Corp Selbstsperrender Transistorschaltkreis
US2887542A (en) * 1956-05-28 1959-05-19 Bell Telephone Labor Inc Non-saturating junction-transistor circuits
US2986651A (en) * 1956-08-09 1961-05-30 Philips Corp Trigger circuit-arrangement comprising two transistors
DE1141335B (de) * 1956-08-29 1962-12-20 Westinghouse Electric Corp Impulszaehler unter Verwendung eines Kondensators
US2945134A (en) * 1956-09-14 1960-07-12 Norman F Moody Bistable semiconductor circuit
GB821256A (en) * 1956-09-28 1959-10-07 Atomic Energy Authority Uk Improvements in or relating to transistor bistable circuits
US2980805A (en) * 1957-02-11 1961-04-18 Norman F Moody Two-state apparatus
US2990478A (en) * 1957-02-25 1961-06-27 Thompson Ramo Wooldridge Inc Anti-saturation circuits for transistor amplifiers
US2976428A (en) * 1957-04-04 1961-03-21 Avco Mfg Corp Digital system of mechanically and electrically compatible building blocks
US3046493A (en) * 1957-04-23 1962-07-24 Bell Telephone Labor Inc Transistor multivibrator circuit
NL112793C (fr) * 1957-04-23
BE564377A (fr) * 1957-04-23
US2924724A (en) * 1957-04-24 1960-02-09 Westinghouse Electric Corp Time delay circuits
US2896094A (en) * 1957-04-29 1959-07-21 Norman F Moody Monostable two-state apparatus
US3023406A (en) * 1957-04-29 1962-02-27 Baldwin Piano Co Optical encoder
US2993127A (en) * 1957-12-04 1961-07-18 Itt Transistor circuit having reverse base current supply means
US2994784A (en) * 1957-12-04 1961-08-01 Westinghouse Electric Corp Bistable control apparatus
US3019351A (en) * 1957-12-20 1962-01-30 Ibm Voltage level translating circuit using constant voltage portion of device characteristic
US2917714A (en) * 1957-12-23 1959-12-15 Honeywell Regulator Co Plural phase oscillator
DE1158106B (de) * 1957-12-27 1963-11-28 Ibm Deutschland Impulsverstaerker mit Transistoren
US3047667A (en) * 1958-02-24 1962-07-31 Bell Telephone Labor Inc Transistor crosspoint switching network
US3025415A (en) * 1958-03-24 1962-03-13 Ibm Bistable transistor circuit
DE1077706B (de) * 1958-03-29 1960-03-17 Siemens Ag Einrichtung zum Schalten und Steuern von Starkstromkreisen
NL122949C (fr) * 1958-06-25 1900-01-01
US3051850A (en) * 1958-10-02 1962-08-28 Bell Telephone Labor Inc Transistor multivibrator circuit with variable impedance operation stabilizing means
DE1225749B (de) * 1958-11-07 1966-09-29 Siemens Ag Programmsteuerung von Arbeitsmaschinen
US3300658A (en) * 1958-11-12 1967-01-24 Transitron Electronic Corp Semi-conductor amplifying device
US3121802A (en) * 1959-01-23 1964-02-18 Sylvania Electric Prod Multivibrator circuit employing transistors of complementary types
DE1163923B (de) * 1959-04-23 1964-02-27 Philips Nv Anordnung zur Stabilisierung von Speisespannungen
US3065360A (en) * 1959-05-19 1962-11-20 Lucio M Vallese Transistor thyratron circuit employing grounded-emitter silicon controlled rectifieror equivalent
DE1127399B (de) * 1959-12-30 1962-04-12 Siemens Ag UEber eine Diode bzw. ein Diodengatter gekoppelte Schalttransistoren
US3090873A (en) * 1960-06-21 1963-05-21 Bell Telephone Labor Inc Integrated semiconductor switching device
US3167724A (en) * 1960-12-28 1965-01-26 Lucio M Vallese Hook type transistor relaxation oscillator
BE622488A (fr) * 1961-09-15
US3210564A (en) * 1961-11-20 1965-10-05 Rca Corp Negative resistance circuits
US3277309A (en) * 1962-03-26 1966-10-04 Gen Time Corp Low drain pulse former
US3231758A (en) * 1962-12-12 1966-01-25 Singer Inc H R B Pulse gate
DE1221291B (de) * 1965-01-23 1966-07-21 Telefunken Patent UEberlastungsschutzeinrichtung fuer mehrstufige transistorisierte Verstaerker, insbesondere fuer Traegerfrequenz-Leitungsverstaerker
US3508081A (en) * 1966-08-17 1970-04-21 Honeywell Inc Circuit arrangement for supplying a current signal to one or two loads
YU43752B (en) * 1978-10-16 1989-12-31 Marko Petrovic Transistorized voltage limiter
DE2854000C2 (de) * 1978-12-14 1982-04-01 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., 8000 München Schaltungsanordnung für eine schaltbare Konstantstromquelle für Lichtsender
US7812404B2 (en) * 2005-05-09 2010-10-12 Sandisk 3D Llc Nonvolatile memory cell comprising a diode and a resistance-switching material
US7834338B2 (en) * 2005-11-23 2010-11-16 Sandisk 3D Llc Memory cell comprising nickel-cobalt oxide switching element
US7816659B2 (en) * 2005-11-23 2010-10-19 Sandisk 3D Llc Devices having reversible resistivity-switching metal oxide or nitride layer with added metal
US7875871B2 (en) * 2006-03-31 2011-01-25 Sandisk 3D Llc Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitride
US7829875B2 (en) 2006-03-31 2010-11-09 Sandisk 3D Llc Nonvolatile rewritable memory cell comprising a resistivity-switching oxide or nitride and an antifuse
US7808810B2 (en) * 2006-03-31 2010-10-05 Sandisk 3D Llc Multilevel nonvolatile memory cell comprising a resistivity-switching oxide or nitride and an antifuse
US7824956B2 (en) 2007-06-29 2010-11-02 Sandisk 3D Llc Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
US7902537B2 (en) * 2007-06-29 2011-03-08 Sandisk 3D Llc Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
US7846785B2 (en) * 2007-06-29 2010-12-07 Sandisk 3D Llc Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same
US8233308B2 (en) 2007-06-29 2012-07-31 Sandisk 3D Llc Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1058554B (de) * 1955-09-07 1959-06-04 Western Electric Co Bistabiler Multivibrator
DE1045459B (de) * 1956-02-27 1958-12-04 Westinghouse Electric Corp Astabile Kippschaltung mit zwei Transistoren zur Erzeugung von Impulsen

Also Published As

Publication number Publication date
GB753014A (en) 1956-07-18
US2655609A (en) 1953-10-13
DE919125C (de) 1954-10-14
BE521569A (fr) 1953-08-14

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