Classifications

• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03F—AMPLIFIERS
  • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
  • H03F3/34—Dc amplifiers in which all stages are dc-coupled
  • H03F3/343—Dc amplifiers in which all stages are dc-coupled with semiconductor devices only
  • H03F3/3432—Dc amplifiers in which all stages are dc-coupled with semiconductor devices only with bipolar transistors
  • H03F3/3435—Dc amplifiers in which all stages are dc-coupled with semiconductor devices only with bipolar transistors using Darlington amplifiers
  • H03F3/3437—Dc amplifiers in which all stages are dc-coupled with semiconductor devices only with bipolar transistors using Darlington amplifiers with complementary transistors
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
  • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
  • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
  • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
  • H01L27/0688—Integrated circuits having a three-dimensional layout
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03F—AMPLIFIERS
  • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
  • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
  • H03F3/14—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with amplifying devices having more than three electrodes or more than two PN junctions

Applications Claiming Priority (1)

Publications (1)

Family

ID=19784007

Family Applications (1)

Country Status (6)

Families Citing this family (15)

Family Cites Families (9)

• 0
  • BE BE526156D patent/BE526156A/xx unknown
• 1954
  • 1954-01-29 GB GB2769/54A patent/GB765568A/en not_active Expired
  • 1954-01-30 DE DEN8375A patent/DE949422C/de not_active Expired
  • 1954-02-01 FR FR1092163D patent/FR1092163A/fr not_active Expired
  • 1954-02-01 US US407560A patent/US2874232A/en not_active Expired - Lifetime
  • 1954-02-01 CH CH321681D patent/CH321681A/de unknown

Also Published As

Similar Documents