FI981959A - Menetelmä bariumia ja strontiumia sisältävien oksidiohutkalvojen kasvattamiseksi - Google Patents

Menetelmä bariumia ja strontiumia sisältävien oksidiohutkalvojen kasvattamiseksi Download PDF

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Publication number
FI981959A
FI981959A FI981959A FI981959A FI981959A FI 981959 A FI981959 A FI 981959A FI 981959 A FI981959 A FI 981959A FI 981959 A FI981959 A FI 981959A FI 981959 A FI981959 A FI 981959A
Authority
FI
Finland
Prior art keywords
strontium
thin films
oxide thin
films containing
growing oxide
Prior art date
Application number
FI981959A
Other languages
English (en)
Swedish (sv)
Other versions
FI108375B (fi
FI981959A0 (fi
Inventor
Markku Antero Leskelae
Mikko Kalervo Ritala
Timo Tapio Hatanpaeae
Timo Pekka Haenninen
Marko Juhani Vehkamaeki
Original Assignee
Mikrokemia Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mikrokemia Oy filed Critical Mikrokemia Oy
Priority to FI981959A priority Critical patent/FI108375B/fi
Publication of FI981959A0 publication Critical patent/FI981959A0/fi
Priority to JP2000570387A priority patent/JP4514337B6/ja
Priority to PCT/FI1999/000741 priority patent/WO2000015865A1/en
Priority to US09/787,062 priority patent/US7108747B1/en
Priority to KR1020017003180A priority patent/KR100556088B1/ko
Priority to AU57483/99A priority patent/AU5748399A/en
Publication of FI981959A publication Critical patent/FI981959A/fi
Application granted granted Critical
Publication of FI108375B publication Critical patent/FI108375B/fi
Priority to US11/864,677 priority patent/US8685165B2/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0436—Processes for depositing or forming copper oxide superconductor layers by chemical vapour deposition [CVD]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
  • Semiconductor Memories (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
FI981959A 1998-09-11 1998-09-11 Menetelmõ eristõvien oksidiohutkalvojen valmistamiseksi FI108375B (fi)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FI981959A FI108375B (fi) 1998-09-11 1998-09-11 Menetelmõ eristõvien oksidiohutkalvojen valmistamiseksi
JP2000570387A JP4514337B6 (ja) 1998-09-11 1999-09-13 バリウムとストロンチウムとを含有する酸化物薄膜を成長させる方法
PCT/FI1999/000741 WO2000015865A1 (en) 1998-09-11 1999-09-13 Method for growing oxide thin films containing barium and strontium
US09/787,062 US7108747B1 (en) 1998-09-11 1999-09-13 Method for growing oxide thin films containing barium and strontium
KR1020017003180A KR100556088B1 (ko) 1998-09-11 1999-09-13 바륨 및 스트론튬을 함유하는 산화 박막의 성장 방법
AU57483/99A AU5748399A (en) 1998-09-11 1999-09-13 Method for growing oxide thin films containing barium and strontium
US11/864,677 US8685165B2 (en) 1998-09-11 2007-09-28 Metal oxide films

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI981959 1998-09-11
FI981959A FI108375B (fi) 1998-09-11 1998-09-11 Menetelmõ eristõvien oksidiohutkalvojen valmistamiseksi

Publications (3)

Publication Number Publication Date
FI981959A0 FI981959A0 (fi) 1998-09-11
FI981959A true FI981959A (fi) 2000-03-12
FI108375B FI108375B (fi) 2002-01-15

Family

ID=8552472

Family Applications (1)

Application Number Title Priority Date Filing Date
FI981959A FI108375B (fi) 1998-09-11 1998-09-11 Menetelmõ eristõvien oksidiohutkalvojen valmistamiseksi

Country Status (5)

Country Link
US (1) US7108747B1 (fi)
KR (1) KR100556088B1 (fi)
AU (1) AU5748399A (fi)
FI (1) FI108375B (fi)
WO (1) WO2000015865A1 (fi)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6548424B2 (en) 2000-04-14 2003-04-15 Asm Microchemistry Oy Process for producing oxide thin films
US8383525B2 (en) 2008-04-25 2013-02-26 Asm America, Inc. Plasma-enhanced deposition process for forming a metal oxide thin film and related structures
US9905414B2 (en) 2000-09-28 2018-02-27 President And Fellows Of Harvard College Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide

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US6951804B2 (en) 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
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US6548424B2 (en) 2000-04-14 2003-04-15 Asm Microchemistry Oy Process for producing oxide thin films
US6777353B2 (en) 2000-04-14 2004-08-17 Asm Microchemistry Oy Process for producing oxide thin films
US7351658B2 (en) 2000-04-14 2008-04-01 Matti Putkonen Process for producing yttrium oxide thin films
US7754621B2 (en) 2000-04-14 2010-07-13 Asm International N.V. Process for producing zirconium oxide thin films
US7998883B2 (en) 2000-04-14 2011-08-16 Asm International N.V. Process for producing zirconium oxide thin films
US9905414B2 (en) 2000-09-28 2018-02-27 President And Fellows Of Harvard College Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide
US8383525B2 (en) 2008-04-25 2013-02-26 Asm America, Inc. Plasma-enhanced deposition process for forming a metal oxide thin film and related structures

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JP4514337B2 (ja) 2010-07-28
JP2002525426A (ja) 2002-08-13
WO2000015865A1 (en) 2000-03-23
FI108375B (fi) 2002-01-15
FI981959A0 (fi) 1998-09-11
US7108747B1 (en) 2006-09-19
AU5748399A (en) 2000-04-03

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