FI940099A0 - Sinkkioksidia oleva pietsosähköinen kiteinen kalvo - Google Patents
Sinkkioksidia oleva pietsosähköinen kiteinen kalvoInfo
- Publication number
- FI940099A0 FI940099A0 FI940099A FI940099A FI940099A0 FI 940099 A0 FI940099 A0 FI 940099A0 FI 940099 A FI940099 A FI 940099A FI 940099 A FI940099 A FI 940099A FI 940099 A0 FI940099 A0 FI 940099A0
- Authority
- FI
- Finland
- Prior art keywords
- zinc oxide
- crystalline film
- piezoelectric crystalline
- piezoelectric
- film
- Prior art date
Links
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title 2
- 239000011787 zinc oxide Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP536593A JP3198691B2 (ja) | 1993-01-14 | 1993-01-14 | 酸化亜鉛圧電結晶膜 |
Publications (3)
Publication Number | Publication Date |
---|---|
FI940099A0 true FI940099A0 (fi) | 1994-01-10 |
FI940099A FI940099A (fi) | 1994-07-15 |
FI111573B FI111573B (fi) | 2003-08-15 |
Family
ID=11609146
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FI940099A FI111573B (fi) | 1993-01-14 | 1994-01-10 | Pietsosähköinen sinkkioksidikidekalvo ja menetelmä sen muodostamiseksi |
Country Status (5)
Country | Link |
---|---|
US (1) | US5432397A (fi) |
EP (1) | EP0608059B1 (fi) |
JP (1) | JP3198691B2 (fi) |
DE (1) | DE69423525T2 (fi) |
FI (1) | FI111573B (fi) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6127768A (en) * | 1997-05-09 | 2000-10-03 | Kobe Steel Usa, Inc. | Surface acoustic wave and bulk acoustic wave devices using a Zn.sub.(1-X) Yx O piezoelectric layer device |
US6303011B1 (en) * | 1997-06-23 | 2001-10-16 | Kabushiki Kaisha Riken | Gas sensor |
JP3878339B2 (ja) | 1997-11-14 | 2007-02-07 | 株式会社リケン | 窒素酸化物センサ |
JP3399392B2 (ja) * | 1999-02-19 | 2003-04-21 | 株式会社村田製作所 | 半導体発光素子、およびその製造方法 |
US6590336B1 (en) * | 1999-08-31 | 2003-07-08 | Murata Manufacturing Co., Ltd. | Light emitting device having a polar plane piezoelectric film and manufacture thereof |
WO2001073170A1 (fr) * | 2000-03-27 | 2001-10-04 | Tohoku Techno Arch Co., Ltd. | Materiau a semi-conducteurs d'oxyde de zinc |
GB2361480B (en) * | 2000-04-19 | 2002-06-19 | Murata Manufacturing Co | Method for forming p-type semiconductor film and light emitting device using the same |
JP2003063893A (ja) * | 2001-06-15 | 2003-03-05 | Murata Mfg Co Ltd | ZnO/サファイア基板及びその製造方法 |
JP4817350B2 (ja) | 2001-07-19 | 2011-11-16 | 株式会社 東北テクノアーチ | 酸化亜鉛半導体部材の製造方法 |
JP2006094140A (ja) | 2004-09-24 | 2006-04-06 | Murata Mfg Co Ltd | 圧電共振子及びその製造方法、圧電フィルタ並びにデュプレクサ |
JP5180189B2 (ja) | 2006-04-25 | 2013-04-10 | ナショナル ユニヴァーシティー オブ シンガポール | エピタキシャル横方向異常成長窒化ガリウムテンプレート上での酸化亜鉛膜成長の方法 |
FR3125459B1 (fr) | 2021-07-22 | 2023-11-17 | Centre Nat Rech Scient | Materiau comprenant une couche de micro-cristaux unidimensionnels auto-assembles de zno. |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3664867A (en) * | 1969-11-24 | 1972-05-23 | North American Rockwell | Composite structure of zinc oxide deposited epitaxially on sapphire |
JPS5133898A (fi) * | 1974-09-17 | 1976-03-23 | Hitachi Ltd | |
JPS5830749B2 (ja) * | 1977-07-28 | 1983-07-01 | 株式会社村田製作所 | 酸化亜鉛の圧電結晶膜 |
JPS5941602B2 (ja) * | 1978-04-18 | 1984-10-08 | 松下電器産業株式会社 | 表面弾性波素子 |
JPS5797214A (en) * | 1980-12-08 | 1982-06-16 | Matsushita Electric Ind Co Ltd | Transducer for surface wave |
EP0111510B1 (en) * | 1982-06-22 | 1988-02-03 | Hughes Aircraft Company | Low temperature process for depositing epitaxial layers |
JPS60124109A (ja) * | 1983-12-09 | 1985-07-03 | Clarion Co Ltd | 表面弾性波素子 |
JPH0340510A (ja) * | 1989-07-06 | 1991-02-21 | Murata Mfg Co Ltd | 弾性表面波装置 |
-
1993
- 1993-01-14 JP JP536593A patent/JP3198691B2/ja not_active Expired - Lifetime
-
1994
- 1994-01-10 FI FI940099A patent/FI111573B/fi not_active IP Right Cessation
- 1994-01-11 EP EP19940300157 patent/EP0608059B1/en not_active Expired - Lifetime
- 1994-01-11 DE DE69423525T patent/DE69423525T2/de not_active Expired - Lifetime
- 1994-01-13 US US08/180,606 patent/US5432397A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0608059A2 (en) | 1994-07-27 |
FI940099A (fi) | 1994-07-15 |
JP3198691B2 (ja) | 2001-08-13 |
DE69423525T2 (de) | 2000-07-20 |
US5432397A (en) | 1995-07-11 |
DE69423525D1 (de) | 2000-04-27 |
FI111573B (fi) | 2003-08-15 |
EP0608059B1 (en) | 2000-03-22 |
EP0608059A3 (en) | 1995-11-02 |
JPH06216699A (ja) | 1994-08-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MA | Patent expired |