FR3125459B1 - Materiau comprenant une couche de micro-cristaux unidimensionnels auto-assembles de zno. - Google Patents
Materiau comprenant une couche de micro-cristaux unidimensionnels auto-assembles de zno. Download PDFInfo
- Publication number
- FR3125459B1 FR3125459B1 FR2107939A FR2107939A FR3125459B1 FR 3125459 B1 FR3125459 B1 FR 3125459B1 FR 2107939 A FR2107939 A FR 2107939A FR 2107939 A FR2107939 A FR 2107939A FR 3125459 B1 FR3125459 B1 FR 3125459B1
- Authority
- FR
- France
- Prior art keywords
- layer
- self
- zno
- crystals
- quartz
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000463 material Substances 0.000 title abstract 3
- 239000013081 microcrystal Substances 0.000 title abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910021489 α-quartz Inorganic materials 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/02—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by evaporation of the solvent
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/20—Aluminium oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B5/00—Single-crystal growth from gels
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Dispersion Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Laminated Bodies (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Manufacturing Of Electric Cables (AREA)
Abstract
La présente invention concerne un matériau multicouches, comprenant un support solide revêtu au moins partiellement d’une couche tampon de quartz-α texturé (100), dont la direction cristallographique [100] du quartz α est parallèle à la direction cristallographique [100] du silicium (100) ; et sur ladite couche tampon de (100) quartz-α, une couche de micro-cristaux unidimensionnels de (110) ZnO épitaxié (ou microfils de ZnO épitaxié), lesdits micro-cristaux étant auto-assemblés. La présente invention concerne également un procédé de fabrication d’un tel matériau multicouches, ainsi que l’utilisation dans l’industrie dans différents domaines technologiques. Figure pour l’abrégé : 8
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR2107939A FR3125459B1 (fr) | 2021-07-22 | 2021-07-22 | Materiau comprenant une couche de micro-cristaux unidimensionnels auto-assembles de zno. |
PCT/FR2022/051466 WO2023002139A1 (fr) | 2021-07-22 | 2022-07-21 | Pseudo-substrat epitaxie piezoelectrique, utilisation et procede de preparation d'un tel pseudo-substrat |
EP22754134.9A EP4374001A1 (fr) | 2021-07-22 | 2022-07-21 | Materiau comprenant une couche de micro-cristaux unidimensionnels auto-assembles de zno |
JP2024503902A JP2024527870A (ja) | 2021-07-22 | 2022-07-21 | 自己組織化された一次元ZnO微結晶の層を含む材料 |
PCT/FR2022/051467 WO2023002140A1 (fr) | 2021-07-22 | 2022-07-21 | Materiau comprenant une couche de micro-cristaux unidimensionnels auto-assembles de zno |
CN202280050735.8A CN117677736A (zh) | 2021-07-22 | 2022-07-21 | 包括自组装一维ZnO微晶层的材料 |
EP22754133.1A EP4374000A1 (fr) | 2021-07-22 | 2022-07-21 | Pseudo-substrat epitaxie piezoelectrique, utilisation et procede de preparation d'un tel pseudo-substrat |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR2107939 | 2021-07-22 | ||
FR2107939A FR3125459B1 (fr) | 2021-07-22 | 2021-07-22 | Materiau comprenant une couche de micro-cristaux unidimensionnels auto-assembles de zno. |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3125459A1 FR3125459A1 (fr) | 2023-01-27 |
FR3125459B1 true FR3125459B1 (fr) | 2023-11-17 |
Family
ID=79270012
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR2107939A Active FR3125459B1 (fr) | 2021-07-22 | 2021-07-22 | Materiau comprenant une couche de micro-cristaux unidimensionnels auto-assembles de zno. |
Country Status (5)
Country | Link |
---|---|
EP (2) | EP4374000A1 (fr) |
JP (1) | JP2024527870A (fr) |
CN (1) | CN117677736A (fr) |
FR (1) | FR3125459B1 (fr) |
WO (2) | WO2023002139A1 (fr) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3198691B2 (ja) | 1993-01-14 | 2001-08-13 | 株式会社村田製作所 | 酸化亜鉛圧電結晶膜 |
FI125154B (en) | 2012-06-29 | 2015-06-15 | Mia Kuusela | Arrangements that can be converted into baby care items |
FR2993580B1 (fr) | 2012-07-23 | 2016-12-23 | Univ Pierre Et Marie Curie (Paris 6) | Procede de preparation d'une couche de quartz-alpha epitaxiee sur support solide, materiau obtenu et applications |
WO2020140165A1 (fr) | 2018-12-30 | 2020-07-09 | 瑞声声学科技(深圳)有限公司 | Corps unique de haut-parleur |
-
2021
- 2021-07-22 FR FR2107939A patent/FR3125459B1/fr active Active
-
2022
- 2022-07-21 EP EP22754133.1A patent/EP4374000A1/fr active Pending
- 2022-07-21 CN CN202280050735.8A patent/CN117677736A/zh active Pending
- 2022-07-21 EP EP22754134.9A patent/EP4374001A1/fr active Pending
- 2022-07-21 WO PCT/FR2022/051466 patent/WO2023002139A1/fr active Application Filing
- 2022-07-21 WO PCT/FR2022/051467 patent/WO2023002140A1/fr active Application Filing
- 2022-07-21 JP JP2024503902A patent/JP2024527870A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
WO2023002140A1 (fr) | 2023-01-26 |
CN117677736A (zh) | 2024-03-08 |
EP4374001A1 (fr) | 2024-05-29 |
FR3125459A1 (fr) | 2023-01-27 |
WO2023002139A1 (fr) | 2023-01-26 |
JP2024527870A (ja) | 2024-07-26 |
EP4374000A1 (fr) | 2024-05-29 |
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