FI87660C - Foerfarande och anordning foer dragning av monokristaller - Google Patents

Foerfarande och anordning foer dragning av monokristaller Download PDF

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Publication number
FI87660C
FI87660C FI885595A FI885595A FI87660C FI 87660 C FI87660 C FI 87660C FI 885595 A FI885595 A FI 885595A FI 885595 A FI885595 A FI 885595A FI 87660 C FI87660 C FI 87660C
Authority
FI
Finland
Prior art keywords
crucible
melt
post
loading
electrical
Prior art date
Application number
FI885595A
Other languages
English (en)
Finnish (fi)
Swedish (sv)
Other versions
FI87660B (fi
FI885595A (fi
FI885595A0 (fi
Inventor
Dieter Drechsel
Original Assignee
Leybold Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Leybold Ag filed Critical Leybold Ag
Publication of FI885595A0 publication Critical patent/FI885595A0/fi
Publication of FI885595A publication Critical patent/FI885595A/fi
Publication of FI87660B publication Critical patent/FI87660B/fi
Application granted granted Critical
Publication of FI87660C publication Critical patent/FI87660C/fi

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20Controlling or regulating
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05DSYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D9/00Level control, e.g. controlling quantity of material stored in vessel
    • G05D9/12Level control, e.g. controlling quantity of material stored in vessel characterised by the use of electric means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FI885595A 1988-03-03 1988-12-01 Foerfarande och anordning foer dragning av monokristaller FI87660C (fi)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3806917 1988-03-03
DE3806917 1988-03-03

Publications (4)

Publication Number Publication Date
FI885595A0 FI885595A0 (fi) 1988-12-01
FI885595A FI885595A (fi) 1989-09-04
FI87660B FI87660B (fi) 1992-10-30
FI87660C true FI87660C (fi) 1993-02-10

Family

ID=6348748

Family Applications (1)

Application Number Title Priority Date Filing Date
FI885595A FI87660C (fi) 1988-03-03 1988-12-01 Foerfarande och anordning foer dragning av monokristaller

Country Status (4)

Country Link
JP (1) JP2740239B2 (it)
DE (1) DE3904858C2 (it)
FI (1) FI87660C (it)
IT (2) IT8823017A0 (it)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2662803B1 (fr) * 1990-05-31 1992-09-04 Aerospatiale Dispositif et installation de cristallogenese pourvus de moyens d'observation.
EP0911430B1 (en) * 1991-04-26 2003-04-09 Mitsubishi Materials Corporation Single crystal growth method
DE4123336A1 (de) * 1991-07-15 1993-01-21 Leybold Ag Kristallziehverfahren und vorrichtung zu seiner durchfuehrung
DE4301072B4 (de) * 1993-01-16 2006-08-24 Crystal Growing Systems Gmbh Verfahren zum Ziehen von Einkristallen aus einer Schmelze
DE10120730B4 (de) 2001-04-27 2006-08-24 Schott Ag Verfahren und Vorrichtung zur Messung der Phasengrenze
CN114675676A (zh) * 2022-03-15 2022-06-28 东莞南玻太阳能玻璃有限公司 液面深度调节方法和装置、电子设备、存储介质

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3740563A (en) * 1971-06-25 1973-06-19 Monsanto Co Electroptical system and method for sensing and controlling the diameter and melt level of pulled crystals
DE2149093C3 (de) * 1971-10-01 1975-07-24 N.V. Philips' Gloeilampenfabrieken, Eindhoven (Niederlande) Vorrichtung zur Züchtung von Einkristallen durch Ziehen aus einer Schmelze
JPS5130528Y2 (it) * 1972-03-21 1976-07-31
JPS5013862U (it) * 1973-06-04 1975-02-13
DE2337169C2 (de) * 1973-07-21 1975-06-26 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Ziehen von Einkristallstäben
BE872578A (fr) * 1978-12-06 1979-03-30 Centre Rech Metallurgique Dispositif pour controler la surface de la charge d'un four a cuve
DE2903061A1 (de) * 1979-01-26 1980-08-07 Heliotronic Gmbh Verfahren zur herstellung grosskristalliner vorzugsorientierter siliciumfolien
US4282184A (en) * 1979-10-09 1981-08-04 Siltec Corporation Continuous replenishment of molten semiconductor in a Czochralski-process, single-crystal-growing furnace
US4410494A (en) * 1981-04-13 1983-10-18 Siltec Corporation Apparatus for controlling flow of molten material between crystal growth furnaces and a replenishment crucible
US4454096A (en) * 1981-06-15 1984-06-12 Siltec Corporation Crystal growth furnace recharge
US4508970A (en) * 1982-07-15 1985-04-02 Motorola, Inc. Melt level sensing system and method
DE3407456A1 (de) * 1984-02-29 1985-09-05 Werner & Mertz Gmbh, 6500 Mainz Kombiniertes reinigungs-/bleich-mittel fuer die behandlung des spuelwassers von toilettenautomaten und dessen anwendung
CA1261715A (en) * 1984-07-06 1989-09-26 General Signal Corporation Apparatus and process for growing monocrystals of semiconductor materials from shallow crucibles by czochralski technique
JPS6153190A (ja) * 1984-08-17 1986-03-17 インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション 結晶ブ−ル成長方法
JPS6186493A (ja) * 1984-10-04 1986-05-01 Toshiba Mach Co Ltd 半導体結晶引上機
DD253437A1 (de) * 1986-10-22 1988-01-20 Freiberg Spurenmetalle Veb Verfahren und anordnung zur ueberwachung und regelung von kristallzuechtungsprozessen

Also Published As

Publication number Publication date
JP2740239B2 (ja) 1998-04-15
DE3904858A1 (de) 1989-09-14
IT8823017A0 (it) 1988-12-20
FI87660B (fi) 1992-10-30
FI885595A (fi) 1989-09-04
IT8919640A0 (it) 1989-03-03
IT1229561B (it) 1991-09-04
FI885595A0 (fi) 1988-12-01
JPH01317187A (ja) 1989-12-21
DE3904858C2 (de) 2001-06-07

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Legal Events

Date Code Title Description
TC Name/ company changed in patent

Owner name: BALZERS UND LEYBOLD DEUTSCHLAND HOLDING

MM Patent lapsed
MM Patent lapsed

Owner name: BALZERS UND LEYBOLD DEUTSCHLAND HOLDING AG