FI121902B - Valoa säteilevä diodi - Google Patents

Valoa säteilevä diodi Download PDF

Info

Publication number
FI121902B
FI121902B FI20070496A FI20070496A FI121902B FI 121902 B FI121902 B FI 121902B FI 20070496 A FI20070496 A FI 20070496A FI 20070496 A FI20070496 A FI 20070496A FI 121902 B FI121902 B FI 121902B
Authority
FI
Finland
Prior art keywords
layer
vertical
electrodes
tray
current
Prior art date
Application number
FI20070496A
Other languages
English (en)
Finnish (fi)
Swedish (sv)
Other versions
FI20070496A0 (fi
Inventor
Vladislav Bougrov
Maxim Odnoblyudov
Original Assignee
Optogan Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Optogan Oy filed Critical Optogan Oy
Publication of FI20070496A0 publication Critical patent/FI20070496A0/fi
Priority to FI20070496A priority Critical patent/FI121902B/fi
Priority to CN2008800205288A priority patent/CN101681971B/zh
Priority to US12/667,330 priority patent/US8198648B2/en
Priority to JP2010512725A priority patent/JP2010530628A/ja
Priority to EP08775463A priority patent/EP2165375A1/en
Priority to KR1020107001289A priority patent/KR20100050464A/ko
Priority to RU2010101276/28A priority patent/RU2462791C2/ru
Priority to PCT/FI2008/050338 priority patent/WO2008155452A1/en
Priority to TW097122991A priority patent/TW200908396A/zh
Priority to HK10108887.7A priority patent/HK1142461A1/xx
Application granted granted Critical
Publication of FI121902B publication Critical patent/FI121902B/fi

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
FI20070496A 2007-06-20 2007-06-20 Valoa säteilevä diodi FI121902B (fi)

Priority Applications (10)

Application Number Priority Date Filing Date Title
FI20070496A FI121902B (fi) 2007-06-20 2007-06-20 Valoa säteilevä diodi
EP08775463A EP2165375A1 (en) 2007-06-20 2008-06-09 Light emitting diode
US12/667,330 US8198648B2 (en) 2007-06-20 2008-06-09 Light emitting diode chip
JP2010512725A JP2010530628A (ja) 2007-06-20 2008-06-09 発光ダイオード
CN2008800205288A CN101681971B (zh) 2007-06-20 2008-06-09 发光二极管
KR1020107001289A KR20100050464A (ko) 2007-06-20 2008-06-09 발광 다이오드
RU2010101276/28A RU2462791C2 (ru) 2007-06-20 2008-06-09 Светоизлучающий диод
PCT/FI2008/050338 WO2008155452A1 (en) 2007-06-20 2008-06-09 Light emitting diode
TW097122991A TW200908396A (en) 2007-06-20 2008-06-20 Light emitting diode
HK10108887.7A HK1142461A1 (en) 2007-06-20 2010-09-17 Light emitting diode

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI20070496 2007-06-20
FI20070496A FI121902B (fi) 2007-06-20 2007-06-20 Valoa säteilevä diodi

Publications (2)

Publication Number Publication Date
FI20070496A0 FI20070496A0 (fi) 2007-06-20
FI121902B true FI121902B (fi) 2011-05-31

Family

ID=38212350

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20070496A FI121902B (fi) 2007-06-20 2007-06-20 Valoa säteilevä diodi

Country Status (10)

Country Link
US (1) US8198648B2 (ko)
EP (1) EP2165375A1 (ko)
JP (1) JP2010530628A (ko)
KR (1) KR20100050464A (ko)
CN (1) CN101681971B (ko)
FI (1) FI121902B (ko)
HK (1) HK1142461A1 (ko)
RU (1) RU2462791C2 (ko)
TW (1) TW200908396A (ko)
WO (1) WO2008155452A1 (ko)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI527260B (zh) * 2008-11-19 2016-03-21 廣鎵光電股份有限公司 發光元件結構及其半導體晶圓結構
KR101093120B1 (ko) * 2009-11-16 2011-12-13 서울옵토디바이스주식회사 전류분산을 위한 전극 연장부들을 갖는 발광 다이오드
KR101625125B1 (ko) * 2009-12-29 2016-05-27 서울바이오시스 주식회사 전극 연장부들을 갖는 발광 다이오드
BR112013001623B1 (pt) 2010-07-23 2021-02-02 Nichia Corporation elemento emissor de luz
JP5841600B2 (ja) * 2010-08-10 2016-01-13 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． Ｌｅｄへの分路層の配置
TWD154431S (zh) * 2012-10-03 2013-07-01 晶元光電股份有限公司 發光二極體
TW201511362A (zh) * 2013-09-09 2015-03-16 Lextar Electronics Corp 發光二極體晶片
USD719112S1 (en) 2013-11-22 2014-12-09 Epistar Corporation Light-emitting diode device
KR102182024B1 (ko) * 2014-07-01 2020-11-23 엘지이노텍 주식회사 발광 소자
WO2016032193A1 (ko) * 2014-08-27 2016-03-03 서울바이오시스 주식회사 발광 소자 및 이의 제조 방법
KR20160025455A (ko) 2014-08-27 2016-03-08 서울바이오시스 주식회사 발광 소자 및 이의 제조 방법
CN109817781A (zh) * 2019-01-31 2019-05-28 深圳第三代半导体研究院 一种正装集成单元发光二极管
CN111863802A (zh) * 2019-04-24 2020-10-30 深圳第三代半导体研究院 一种垂直集成单元二极管芯片
CN111863853A (zh) * 2019-04-24 2020-10-30 深圳第三代半导体研究院 一种垂直集成单元二极管芯片
CN111048638A (zh) * 2019-04-25 2020-04-21 深圳第三代半导体研究院 一种垂直集成单元二极管芯片
CN113036009B (zh) * 2019-12-25 2022-07-05 深圳第三代半导体研究院 一种薄膜垂直集成单元二极管芯片

Family Cites Families (18)

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Publication number Priority date Publication date Assignee Title
US6784463B2 (en) * 1997-06-03 2004-08-31 Lumileds Lighting U.S., Llc III-Phospide and III-Arsenide flip chip light-emitting devices
US6307218B1 (en) * 1998-11-20 2001-10-23 Lumileds Lighting, U.S., Llc Electrode structures for light emitting devices
US6614056B1 (en) * 1999-12-01 2003-09-02 Cree Lighting Company Scalable led with improved current spreading structures
JP4501234B2 (ja) * 2000-06-28 2010-07-14 日亜化学工業株式会社 窒化物半導体素子
US7102158B2 (en) * 2000-10-23 2006-09-05 General Electric Company Light-based system for detecting analytes
JP4616491B2 (ja) 2001-03-21 2011-01-19 星和電機株式会社 窒化ガリウム系化合物半導体発光素子
US6618418B2 (en) * 2001-11-15 2003-09-09 Xerox Corporation Dual III-V nitride laser structure with reduced thermal cross-talk
TW516248B (en) * 2001-12-21 2003-01-01 Epitech Technology Corp Nitride light emitting diode with spiral-shaped metal electrode
US6828596B2 (en) * 2002-06-13 2004-12-07 Lumileds Lighting U.S., Llc Contacting scheme for large and small area semiconductor light emitting flip chip devices
US6958498B2 (en) * 2002-09-27 2005-10-25 Emcore Corporation Optimized contact design for flip-chip LED
TWI222756B (en) * 2002-11-12 2004-10-21 Epitech Corp Ltd Lateral current blocking light emitting diode and method of making the same
RU2231171C1 (ru) * 2003-04-30 2004-06-20 Закрытое акционерное общество "Инновационная фирма "ТЕТИС" Светоизлучающий диод
US20050133806A1 (en) * 2003-12-17 2005-06-23 Hui Peng P and N contact pad layout designs of GaN based LEDs for flip chip packaging
US7285801B2 (en) * 2004-04-02 2007-10-23 Lumination, Llc LED with series-connected monolithically integrated mesas
JP2006086516A (ja) 2004-08-20 2006-03-30 Showa Denko Kk 半導体発光素子の製造方法
TWI246210B (en) * 2005-04-28 2005-12-21 Epitech Corp Ltd Lateral current blocking light emitting diode and method for manufacturing the same
US20060267043A1 (en) * 2005-05-27 2006-11-30 Emerson David T Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices
JP4947954B2 (ja) * 2005-10-31 2012-06-06 スタンレー電気株式会社 発光素子

Also Published As

Publication number Publication date
JP2010530628A (ja) 2010-09-09
HK1142461A1 (en) 2010-12-03
TW200908396A (en) 2009-02-16
WO2008155452A1 (en) 2008-12-24
CN101681971B (zh) 2012-09-19
US8198648B2 (en) 2012-06-12
US20100163910A1 (en) 2010-07-01
EP2165375A1 (en) 2010-03-24
RU2462791C2 (ru) 2012-09-27
FI20070496A0 (fi) 2007-06-20
KR20100050464A (ko) 2010-05-13
RU2010101276A (ru) 2011-07-27
CN101681971A (zh) 2010-03-24

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