FI118196B - Puolijohderakenne ja puolijohderakenteen valmistusmenetelmä - Google Patents

Puolijohderakenne ja puolijohderakenteen valmistusmenetelmä Download PDF

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Publication number
FI118196B
FI118196B FI20050707A FI20050707A FI118196B FI 118196 B FI118196 B FI 118196B FI 20050707 A FI20050707 A FI 20050707A FI 20050707 A FI20050707 A FI 20050707A FI 118196 B FI118196 B FI 118196B
Authority
FI
Finland
Prior art keywords
diffusion
layers
layer
semiconductor structure
lattice constant
Prior art date
Application number
FI20050707A
Other languages
English (en)
Finnish (fi)
Swedish (sv)
Other versions
FI20050707A (fi
FI20050707A0 (fi
Inventor
Maxim A Odnoblyudov
Vladislav E Bougrov
Original Assignee
Optogan Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Optogan Oy filed Critical Optogan Oy
Publication of FI20050707A0 publication Critical patent/FI20050707A0/fi
Priority to FI20050707A priority Critical patent/FI118196B/fi
Priority to CNB200680023943XA priority patent/CN100568560C/zh
Priority to RU2008102874/28A priority patent/RU2391746C2/ru
Priority to JP2008518877A priority patent/JP5247439B2/ja
Priority to PCT/FI2006/000220 priority patent/WO2007003684A1/en
Priority to KR1020087002038A priority patent/KR101238310B1/ko
Priority to US11/988,055 priority patent/US7763904B2/en
Priority to EP06764446A priority patent/EP1908122A4/en
Priority to TW095122874A priority patent/TWI390724B/zh
Publication of FI20050707A publication Critical patent/FI20050707A/fi
Application granted granted Critical
Publication of FI118196B publication Critical patent/FI118196B/fi
Priority to HK08113431.2A priority patent/HK1124172A1/xx
Priority to US12/829,466 priority patent/US8062913B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
FI20050707A 2005-01-07 2005-07-01 Puolijohderakenne ja puolijohderakenteen valmistusmenetelmä FI118196B (fi)

Priority Applications (11)

Application Number Priority Date Filing Date Title
FI20050707A FI118196B (fi) 2005-07-01 2005-07-01 Puolijohderakenne ja puolijohderakenteen valmistusmenetelmä
US11/988,055 US7763904B2 (en) 2005-01-07 2006-06-20 Semiconductor structure and method of manufacturing a semiconductor structure
RU2008102874/28A RU2391746C2 (ru) 2005-07-01 2006-06-20 Полупроводниковая структура и способ изготовления полупроводниковой структуры
JP2008518877A JP5247439B2 (ja) 2005-07-01 2006-06-20 半導体構造および半導体構造を製造する方法
PCT/FI2006/000220 WO2007003684A1 (en) 2005-07-01 2006-06-20 Semiconductor structure and method of manufacturing a semiconductor structure
KR1020087002038A KR101238310B1 (ko) 2005-07-01 2006-06-20 반도체 구조 및 반도체 구조의 제조 방법
CNB200680023943XA CN100568560C (zh) 2005-07-01 2006-06-20 半导体结构及制造半导体结构的方法
EP06764446A EP1908122A4 (en) 2005-07-01 2006-06-20 SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE
TW095122874A TWI390724B (zh) 2005-07-01 2006-06-26 半導體結構體及其製造方法
HK08113431.2A HK1124172A1 (en) 2005-07-01 2008-12-10 Semiconductor structure and method of manufacturing a semiconductor structure
US12/829,466 US8062913B2 (en) 2005-07-01 2010-07-02 Semiconductor structure and method of manufacturing a semiconductor structure

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI20050707A FI118196B (fi) 2005-07-01 2005-07-01 Puolijohderakenne ja puolijohderakenteen valmistusmenetelmä
FI20050707 2005-07-01

Publications (3)

Publication Number Publication Date
FI20050707A0 FI20050707A0 (fi) 2005-07-01
FI20050707A FI20050707A (fi) 2007-01-02
FI118196B true FI118196B (fi) 2007-08-15

Family

ID=34803175

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20050707A FI118196B (fi) 2005-01-07 2005-07-01 Puolijohderakenne ja puolijohderakenteen valmistusmenetelmä

Country Status (10)

Country Link
US (2) US7763904B2 (ja)
EP (1) EP1908122A4 (ja)
JP (1) JP5247439B2 (ja)
KR (1) KR101238310B1 (ja)
CN (1) CN100568560C (ja)
FI (1) FI118196B (ja)
HK (1) HK1124172A1 (ja)
RU (1) RU2391746C2 (ja)
TW (1) TWI390724B (ja)
WO (1) WO2007003684A1 (ja)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008182069A (ja) * 2007-01-25 2008-08-07 Toshiba Corp 半導体発光素子
TWI321366B (en) * 2007-02-09 2010-03-01 Huga Optotech Inc Epi-structure with uneven multi-quantum well and the method thereof
DE102008035784A1 (de) * 2008-07-31 2010-02-11 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
US8129205B2 (en) * 2010-01-25 2012-03-06 Micron Technology, Inc. Solid state lighting devices and associated methods of manufacturing
DE102011012925A1 (de) * 2011-03-03 2012-09-06 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
RU2485630C2 (ru) * 2011-08-04 2013-06-20 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования Томский государственный университет систем управления и радиоэлектроники Способ изготовления светодиода
US9269858B2 (en) * 2011-08-31 2016-02-23 Micron Technology, Inc. Engineered substrates for semiconductor devices and associated systems and methods
JP7094082B2 (ja) * 2017-06-14 2022-07-01 日本ルメンタム株式会社 光半導体素子、光サブアセンブリ、及び光モジュール
CN109143764A (zh) * 2018-11-05 2019-01-04 成都菲斯特科技有限公司 成像结构、投影屏幕及投影系统

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US3954534A (en) * 1974-10-29 1976-05-04 Xerox Corporation Method of forming light emitting diode array with dome geometry
TW253999B (ja) * 1993-06-30 1995-08-11 Hitachi Cable
DE19629920B4 (de) * 1995-08-10 2006-02-02 LumiLeds Lighting, U.S., LLC, San Jose Licht-emittierende Diode mit einem nicht-absorbierenden verteilten Braggreflektor
US5779924A (en) * 1996-03-22 1998-07-14 Hewlett-Packard Company Ordered interface texturing for a light emitting device
US6849472B2 (en) * 1997-09-30 2005-02-01 Lumileds Lighting U.S., Llc Nitride semiconductor device with reduced polarization fields
JP3196833B2 (ja) * 1998-06-23 2001-08-06 日本電気株式会社 Ｉｉｉ−ｖ族化合物半導体の成長方法及びこの方法を用いた半導体発光素子の製造方法
JP3592553B2 (ja) * 1998-10-15 2004-11-24 株式会社東芝 窒化ガリウム系半導体装置
US6614059B1 (en) * 1999-01-07 2003-09-02 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device with quantum well
JP2001102690A (ja) * 1999-09-29 2001-04-13 Toshiba Corp 窒化物系半導体レーザ装置
KR100700993B1 (ko) * 1999-12-03 2007-03-30 크리, 인코포레이티드 향상된 광 적출 구조체를 갖는 발광 다이오드 및 그 제조 방법
US6903376B2 (en) * 1999-12-22 2005-06-07 Lumileds Lighting U.S., Llc Selective placement of quantum wells in flipchip light emitting diodes for improved light extraction
DE10033496A1 (de) * 2000-07-10 2002-01-31 Osram Opto Semiconductors Gmbh Halbleiterchip für die Optoelektronik
AU2001280097A1 (en) * 2000-08-18 2002-03-04 Showa Denko K.K. Method of fabricating group-iii nitride semiconductor crystal, metho of fabricating gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor light-emitting device, and light source using the semiconductor light
JP4055503B2 (ja) * 2001-07-24 2008-03-05 日亜化学工業株式会社 半導体発光素子
JP2003092426A (ja) * 2001-09-18 2003-03-28 Nichia Chem Ind Ltd 窒化物系化合物半導体発光素子およびその製造方法
JP2003101157A (ja) * 2001-09-26 2003-04-04 Toshiba Corp 半導体装置及びその製造方法
US6683327B2 (en) * 2001-11-13 2004-01-27 Lumileds Lighting U.S., Llc Nucleation layer for improved light extraction from light emitting devices
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JP3776824B2 (ja) * 2002-04-05 2006-05-17 株式会社東芝 半導体発光素子およびその製造方法
US6921804B2 (en) 2003-03-25 2005-07-26 Equistar Chemicals L.P. Cascaded polyolefin slurry polymerization employing disengagement vessel between reactors
US6781160B1 (en) * 2003-06-24 2004-08-24 United Epitaxy Company, Ltd. Semiconductor light emitting device and method for manufacturing the same
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JP2005093682A (ja) * 2003-09-17 2005-04-07 Toyoda Gosei Co Ltd ＧａＮ系半導体発光素子及びその製造方法
KR100714639B1 (ko) * 2003-10-21 2007-05-07 삼성전기주식회사 발광 소자

Also Published As

Publication number Publication date
FI20050707A (fi) 2007-01-02
US20100314662A1 (en) 2010-12-16
EP1908122A4 (en) 2013-03-27
CN100568560C (zh) 2009-12-09
US20090127574A1 (en) 2009-05-21
WO2007003684A1 (en) 2007-01-11
RU2391746C2 (ru) 2010-06-10
EP1908122A1 (en) 2008-04-09
US8062913B2 (en) 2011-11-22
TW200705657A (en) 2007-02-01
JP5247439B2 (ja) 2013-07-24
RU2008102874A (ru) 2009-08-10
JP2008545261A (ja) 2008-12-11
HK1124172A1 (en) 2009-07-03
CN101213676A (zh) 2008-07-02
TWI390724B (zh) 2013-03-21
US7763904B2 (en) 2010-07-27
FI20050707A0 (fi) 2005-07-01
KR101238310B1 (ko) 2013-02-28
KR20080034441A (ko) 2008-04-21

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