HK1124172A1 - Semiconductor structure and method of manufacturing a semiconductor structure - Google Patents

Semiconductor structure and method of manufacturing a semiconductor structure

Info

Publication number
HK1124172A1
HK1124172A1 HK08113431.2A HK08113431A HK1124172A1 HK 1124172 A1 HK1124172 A1 HK 1124172A1 HK 08113431 A HK08113431 A HK 08113431A HK 1124172 A1 HK1124172 A1 HK 1124172A1
Authority
HK
Hong Kong
Prior art keywords
semiconductor structure
manufacturing
semiconductor
Prior art date
Application number
HK08113431.2A
Other languages
English (en)
Inventor
Vladislav E Bougrov
Maxim A Odnoblyudov
Original Assignee
Optogan Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Optogan Oy filed Critical Optogan Oy
Publication of HK1124172A1 publication Critical patent/HK1124172A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
HK08113431.2A 2005-07-01 2008-12-10 Semiconductor structure and method of manufacturing a semiconductor structure HK1124172A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI20050707A FI118196B (fi) 2005-07-01 2005-07-01 Puolijohderakenne ja puolijohderakenteen valmistusmenetelmä
PCT/FI2006/000220 WO2007003684A1 (en) 2005-07-01 2006-06-20 Semiconductor structure and method of manufacturing a semiconductor structure

Publications (1)

Publication Number Publication Date
HK1124172A1 true HK1124172A1 (en) 2009-07-03

Family

ID=34803175

Family Applications (1)

Application Number Title Priority Date Filing Date
HK08113431.2A HK1124172A1 (en) 2005-07-01 2008-12-10 Semiconductor structure and method of manufacturing a semiconductor structure

Country Status (10)

Country Link
US (2) US7763904B2 (xx)
EP (1) EP1908122A4 (xx)
JP (1) JP5247439B2 (xx)
KR (1) KR101238310B1 (xx)
CN (1) CN100568560C (xx)
FI (1) FI118196B (xx)
HK (1) HK1124172A1 (xx)
RU (1) RU2391746C2 (xx)
TW (1) TWI390724B (xx)
WO (1) WO2007003684A1 (xx)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008182069A (ja) * 2007-01-25 2008-08-07 Toshiba Corp 半導体発光素子
TWI321366B (en) * 2007-02-09 2010-03-01 Huga Optotech Inc Epi-structure with uneven multi-quantum well and the method thereof
DE102008035784A1 (de) * 2008-07-31 2010-02-11 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
US8129205B2 (en) * 2010-01-25 2012-03-06 Micron Technology, Inc. Solid state lighting devices and associated methods of manufacturing
DE102011012925A1 (de) * 2011-03-03 2012-09-06 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
RU2485630C2 (ru) * 2011-08-04 2013-06-20 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования Томский государственный университет систем управления и радиоэлектроники Способ изготовления светодиода
US9269858B2 (en) * 2011-08-31 2016-02-23 Micron Technology, Inc. Engineered substrates for semiconductor devices and associated systems and methods
JP7094082B2 (ja) * 2017-06-14 2022-07-01 日本ルメンタム株式会社 光半導体素子、光サブアセンブリ、及び光モジュール
CN109143764A (zh) * 2018-11-05 2019-01-04 成都菲斯特科技有限公司 成像结构、投影屏幕及投影系统

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3954534A (en) * 1974-10-29 1976-05-04 Xerox Corporation Method of forming light emitting diode array with dome geometry
TW253999B (xx) * 1993-06-30 1995-08-11 Hitachi Cable
DE19629920B4 (de) * 1995-08-10 2006-02-02 LumiLeds Lighting, U.S., LLC, San Jose Licht-emittierende Diode mit einem nicht-absorbierenden verteilten Braggreflektor
US5779924A (en) * 1996-03-22 1998-07-14 Hewlett-Packard Company Ordered interface texturing for a light emitting device
US6849472B2 (en) * 1997-09-30 2005-02-01 Lumileds Lighting U.S., Llc Nitride semiconductor device with reduced polarization fields
JP3196833B2 (ja) * 1998-06-23 2001-08-06 日本電気株式会社 Ｉｉｉ−ｖ族化合物半導体の成長方法及びこの方法を用いた半導体発光素子の製造方法
JP3592553B2 (ja) * 1998-10-15 2004-11-24 株式会社東芝 窒化ガリウム系半導体装置
US6614059B1 (en) * 1999-01-07 2003-09-02 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device with quantum well
JP2001102690A (ja) * 1999-09-29 2001-04-13 Toshiba Corp 窒化物系半導体レーザ装置
KR100700993B1 (ko) * 1999-12-03 2007-03-30 크리, 인코포레이티드 향상된 광 적출 구조체를 갖는 발광 다이오드 및 그 제조 방법
US6903376B2 (en) * 1999-12-22 2005-06-07 Lumileds Lighting U.S., Llc Selective placement of quantum wells in flipchip light emitting diodes for improved light extraction
DE10033496A1 (de) * 2000-07-10 2002-01-31 Osram Opto Semiconductors Gmbh Halbleiterchip für die Optoelektronik
AU2001280097A1 (en) * 2000-08-18 2002-03-04 Showa Denko K.K. Method of fabricating group-iii nitride semiconductor crystal, metho of fabricating gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor light-emitting device, and light source using the semiconductor light
JP4055503B2 (ja) * 2001-07-24 2008-03-05 日亜化学工業株式会社 半導体発光素子
JP2003092426A (ja) * 2001-09-18 2003-03-28 Nichia Chem Ind Ltd 窒化物系化合物半導体発光素子およびその製造方法
JP2003101157A (ja) * 2001-09-26 2003-04-04 Toshiba Corp 半導体装置及びその製造方法
US6683327B2 (en) * 2001-11-13 2004-01-27 Lumileds Lighting U.S., Llc Nucleation layer for improved light extraction from light emitting devices
JP3968566B2 (ja) * 2002-03-26 2007-08-29 日立電線株式会社 窒化物半導体結晶の製造方法及び窒化物半導体ウエハ並びに窒化物半導体デバイス
JP3776824B2 (ja) * 2002-04-05 2006-05-17 株式会社東芝 半導体発光素子およびその製造方法
US6921804B2 (en) 2003-03-25 2005-07-26 Equistar Chemicals L.P. Cascaded polyolefin slurry polymerization employing disengagement vessel between reactors
US6781160B1 (en) * 2003-06-24 2004-08-24 United Epitaxy Company, Ltd. Semiconductor light emitting device and method for manufacturing the same
US6847057B1 (en) * 2003-08-01 2005-01-25 Lumileds Lighting U.S., Llc Semiconductor light emitting devices
JP2005093682A (ja) * 2003-09-17 2005-04-07 Toyoda Gosei Co Ltd ＧａＮ系半導体発光素子及びその製造方法
KR100714639B1 (ko) * 2003-10-21 2007-05-07 삼성전기주식회사 발광 소자

Also Published As

Publication number Publication date
FI20050707A (fi) 2007-01-02
US20100314662A1 (en) 2010-12-16
EP1908122A4 (en) 2013-03-27
CN100568560C (zh) 2009-12-09
US20090127574A1 (en) 2009-05-21
WO2007003684A1 (en) 2007-01-11
RU2391746C2 (ru) 2010-06-10
EP1908122A1 (en) 2008-04-09
US8062913B2 (en) 2011-11-22
TW200705657A (en) 2007-02-01
JP5247439B2 (ja) 2013-07-24
RU2008102874A (ru) 2009-08-10
JP2008545261A (ja) 2008-12-11
CN101213676A (zh) 2008-07-02
TWI390724B (zh) 2013-03-21
US7763904B2 (en) 2010-07-27
FI20050707A0 (fi) 2005-07-01
FI118196B (fi) 2007-08-15
KR101238310B1 (ko) 2013-02-28
KR20080034441A (ko) 2008-04-21

Similar Documents

Publication Publication Date Title
TWI348741B (en) Semiconductor device and method of manufacturing the same
EP1935027A4 (en) SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
EP1946374A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
TWI562380B (en) Semiconductor device, electronic device, and method of manufacturing semiconductor device
EP1966740A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
GB2418437B (en) A rib-frame structure and method of manufacturing it
TWI318008B (en) Method of manufacturing semiconductor device
SG131100A1 (en) Semiconductor device and manufacturing method of the same
EP2008310A4 (en) SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
EP1953814A4 (en) WAFER HOUSING STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
HK1124172A1 (en) Semiconductor structure and method of manufacturing a semiconductor structure
HK1097104A1 (en) Method of forming a semiconductor device and structure therefor
EP1725496A4 (en) METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
EP2008628A4 (en) PACKING WITH AN ARTICLE AND METHOD OF MANUFACTURING THEREOF
ZA200602215B (en) Honeycomb structure and manufacturing method thereof
TWI319615B (en) Package substrate and manufacturing method thereof
GB2419709B (en) Structure manufacturing method
HK1079336A1 (en) Semiconductor wafer and manufacturing method therefor
EP1868251A4 (en) SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING THE SAME
TWI318794B (en) Semiconductor device and manufacturing method of the same
HK1103854A1 (en) Method of forming a low resistance semiconductor contact and structure therefor
TWI318006B (en) Semiconductor device and manufacturing method thereof
EP1919829A4 (en) AEROGEL AND METHOD OF MANUFACTURING
EP1846952A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
HUE044227T2 (hu) Félvezetõ szerkezet és eljárás annak kialakítására