FI118158B - Förfarande för modifiering av utgångsämneskemikalierna i en ALD-prosess - Google Patents

Förfarande för modifiering av utgångsämneskemikalierna i en ALD-prosess Download PDF

Info

Publication number
FI118158B
FI118158B FI992233A FI19992233A FI118158B FI 118158 B FI118158 B FI 118158B FI 992233 A FI992233 A FI 992233A FI 19992233 A FI19992233 A FI 19992233A FI 118158 B FI118158 B FI 118158B
Authority
FI
Finland
Prior art keywords
metal
precursor
reaction
metal precursor
reducing agent
Prior art date
Application number
FI992233A
Other languages
English (en)
Finnish (fi)
Swedish (sv)
Other versions
FI19992233A (fi
Inventor
Kai-Erik Elers
Original Assignee
Asm Int
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asm Int filed Critical Asm Int
Priority to FI992233A priority Critical patent/FI118158B/fi
Priority to FI20000564A priority patent/FI119941B/fi
Priority to PCT/FI2000/000884 priority patent/WO2001027346A1/en
Priority to TW089121351A priority patent/TW500826B/zh
Priority to DE60019789T priority patent/DE60019789T2/de
Priority to AU79257/00A priority patent/AU7925700A/en
Priority to JP2001529475A priority patent/JP5047434B2/ja
Priority to US10/110,598 priority patent/US6767582B1/en
Priority to KR1020027004822A priority patent/KR100697453B1/ko
Priority to EP00969585A priority patent/EP1230421B1/en
Priority to US09/687,205 priority patent/US6475276B1/en
Priority to US09/687,204 priority patent/US6482262B1/en
Priority to US10/049,125 priority patent/US6902763B1/en
Priority to AU10884/01A priority patent/AU1088401A/en
Priority to AU12082/01A priority patent/AU1208201A/en
Priority to JP2001532259A priority patent/JP4965782B2/ja
Priority to PCT/US2000/028537 priority patent/WO2001029280A1/en
Priority to PCT/US2000/028654 priority patent/WO2001029893A1/en
Priority to JP2001531142A priority patent/JP4746234B2/ja
Priority to EP00973583A priority patent/EP1221178A1/en
Priority to KR1020027004824A priority patent/KR100737901B1/ko
Publication of FI19992233A publication Critical patent/FI19992233A/fi
Priority to US10/210,715 priority patent/US6821889B2/en
Priority to US10/246,131 priority patent/US6800552B2/en
Priority to US10/867,890 priority patent/US20050000431A1/en
Priority to US10/969,297 priority patent/US7329590B2/en
Priority to US10/990,424 priority patent/US7144809B2/en
Priority to US11/288,872 priority patent/US7749871B2/en
Priority to US11/634,818 priority patent/US7485340B2/en
Application granted granted Critical
Publication of FI118158B publication Critical patent/FI118158B/fi

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45534—Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76855—After-treatment introducing at least one additional element into the layer
    • H01L21/76856—After-treatment introducing at least one additional element into the layer by treatment in plasmas or gaseous environments, e.g. nitriding a refractory metal liner
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
    • H01L2221/1068—Formation and after-treatment of conductors
    • H01L2221/1073—Barrier, adhesion or liner layers
    • H01L2221/1078—Multiple stacked thin films not being formed in openings in dielectrics

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Electrochemistry (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
FI992233A 1959-10-10 1999-10-15 Förfarande för modifiering av utgångsämneskemikalierna i en ALD-prosess FI118158B (sv)

Priority Applications (28)

Application Number Priority Date Filing Date Title
FI992233A FI118158B (sv) 1999-10-15 1999-10-15 Förfarande för modifiering av utgångsämneskemikalierna i en ALD-prosess
FI20000564A FI119941B (fi) 1999-10-15 2000-03-10 Menetelmä nanolaminaattien valmistamiseksi
TW089121351A TW500826B (en) 1999-10-15 2000-10-12 Method of modifying source chemicals in an ald process
DE60019789T DE60019789T2 (de) 1999-10-15 2000-10-12 Verfahren zum modifizieren von chemikalien in einem ald-verfahren
PCT/FI2000/000884 WO2001027346A1 (en) 1999-10-15 2000-10-12 Method of modifying source chemicals in an ald process
AU79257/00A AU7925700A (en) 1999-10-15 2000-10-12 Method of modifying source chemicals in an ald process
JP2001529475A JP5047434B2 (ja) 1999-10-15 2000-10-12 Ａｌｄ法において原料化学物質を改質する方法
US10/110,598 US6767582B1 (en) 1999-10-15 2000-10-12 Method of modifying source chemicals in an ald process
KR1020027004822A KR100697453B1 (ko) 1999-10-15 2000-10-12 전이 금속 소오스 재료의 환원 방법 및 원자 층 증착 방법
EP00969585A EP1230421B1 (en) 1999-10-15 2000-10-12 Method of modifying source chemicals in an ald process
US09/687,204 US6482262B1 (en) 1959-10-10 2000-10-13 Deposition of transition metal carbides
US09/687,205 US6475276B1 (en) 1999-10-15 2000-10-13 Production of elemental thin films using a boron-containing reducing agent
JP2001532259A JP4965782B2 (ja) 1999-10-15 2000-10-16 遷移金属炭化物の堆積
AU12082/01A AU1208201A (en) 1999-10-15 2000-10-16 Method for depositing nanolaminate thin films on sensitive surfaces
US10/049,125 US6902763B1 (en) 1999-10-15 2000-10-16 Method for depositing nanolaminate thin films on sensitive surfaces
PCT/US2000/028537 WO2001029280A1 (en) 1999-10-15 2000-10-16 Deposition of transition metal carbides
PCT/US2000/028654 WO2001029893A1 (en) 1999-10-15 2000-10-16 Method for depositing nanolaminate thin films on sensitive surfaces
JP2001531142A JP4746234B2 (ja) 1999-10-15 2000-10-16 感受性表面上にナノラミネート薄膜を堆積するための方法
EP00973583A EP1221178A1 (en) 1999-10-15 2000-10-16 Method for depositing nanolaminate thin films on sensitive surfaces
KR1020027004824A KR100737901B1 (ko) 1999-10-15 2000-10-16 민감한 표면에 나노적층박막을 증착하는 방법
AU10884/01A AU1088401A (en) 1999-10-15 2000-10-16 Deposition of transition metal carbides
US10/210,715 US6821889B2 (en) 1999-10-15 2002-07-30 Production of elemental thin films using a boron-containing reducing agent
US10/246,131 US6800552B2 (en) 1999-10-15 2002-09-17 Deposition of transition metal carbides
US10/867,890 US20050000431A1 (en) 1999-10-15 2004-06-14 Method of modifying source chemicals in an ALD process
US10/969,297 US7329590B2 (en) 1999-10-15 2004-10-19 Method for depositing nanolaminate thin films on sensitive surfaces
US10/990,424 US7144809B2 (en) 1999-10-15 2004-11-16 Production of elemental films using a boron-containing reducing agent
US11/288,872 US7749871B2 (en) 1999-10-15 2005-11-28 Method for depositing nanolaminate thin films on sensitive surfaces
US11/634,818 US7485340B2 (en) 1999-10-15 2006-12-05 Production of elemental films using a boron-containing reducing agent

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI992233A FI118158B (sv) 1999-10-15 1999-10-15 Förfarande för modifiering av utgångsämneskemikalierna i en ALD-prosess
FI992233 1999-10-15

Publications (2)

Publication Number Publication Date
FI19992233A FI19992233A (fi) 2001-04-16
FI118158B true FI118158B (sv) 2007-07-31

Family

ID=8555458

Family Applications (1)

Application Number Title Priority Date Filing Date
FI992233A FI118158B (sv) 1959-10-10 1999-10-15 Förfarande för modifiering av utgångsämneskemikalierna i en ALD-prosess

Country Status (9)

Country Link
US (2) US6767582B1 (ko)
EP (1) EP1230421B1 (ko)
JP (1) JP5047434B2 (ko)
KR (1) KR100697453B1 (ko)
AU (1) AU7925700A (ko)
DE (1) DE60019789T2 (ko)
FI (1) FI118158B (ko)
TW (1) TW500826B (ko)
WO (1) WO2001027346A1 (ko)

Families Citing this family (103)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI118158B (sv) * 1999-10-15 2007-07-31 Asm Int Förfarande för modifiering av utgångsämneskemikalierna i en ALD-prosess
US7515264B2 (en) * 1999-06-15 2009-04-07 Tokyo Electron Limited Particle-measuring system and particle-measuring method
US6319766B1 (en) 2000-02-22 2001-11-20 Applied Materials, Inc. Method of tantalum nitride deposition by tantalum oxide densification
US6620723B1 (en) 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US6825447B2 (en) 2000-12-29 2004-11-30 Applied Materials, Inc. Apparatus and method for uniform substrate heating and contaminate collection
US6765178B2 (en) 2000-12-29 2004-07-20 Applied Materials, Inc. Chamber for uniform substrate heating
US6811814B2 (en) 2001-01-16 2004-11-02 Applied Materials, Inc. Method for growing thin films by catalytic enhancement
US6951804B2 (en) * 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US6660126B2 (en) 2001-03-02 2003-12-09 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6734020B2 (en) 2001-03-07 2004-05-11 Applied Materials, Inc. Valve control system for atomic layer deposition chamber
US7037574B2 (en) 2001-05-23 2006-05-02 Veeco Instruments, Inc. Atomic layer deposition for fabricating thin films
US7211144B2 (en) * 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
JP2005518088A (ja) 2001-07-16 2005-06-16 アプライド　マテリアルズ　インコーポレイテッド タングステン複合膜の形成
US9051641B2 (en) 2001-07-25 2015-06-09 Applied Materials, Inc. Cobalt deposition on barrier surfaces
US8026161B2 (en) 2001-08-30 2011-09-27 Micron Technology, Inc. Highly reliable amorphous high-K gate oxide ZrO2
US6844203B2 (en) * 2001-08-30 2005-01-18 Micron Technology, Inc. Gate oxides, and methods of forming
JP4178776B2 (ja) * 2001-09-03 2008-11-12 東京エレクトロン株式会社 成膜方法
US20030049931A1 (en) * 2001-09-19 2003-03-13 Applied Materials, Inc. Formation of refractory metal nitrides using chemisorption techniques
TW589684B (en) 2001-10-10 2004-06-01 Applied Materials Inc Method for depositing refractory metal layers employing sequential deposition techniques
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US6729824B2 (en) 2001-12-14 2004-05-04 Applied Materials, Inc. Dual robot processing system
US6939801B2 (en) 2001-12-21 2005-09-06 Applied Materials, Inc. Selective deposition of a barrier layer on a dielectric material
US6809026B2 (en) 2001-12-21 2004-10-26 Applied Materials, Inc. Selective deposition of a barrier layer on a metal film
US6620670B2 (en) 2002-01-18 2003-09-16 Applied Materials, Inc. Process conditions and precursors for atomic layer deposition (ALD) of AL2O3
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US6827978B2 (en) 2002-02-11 2004-12-07 Applied Materials, Inc. Deposition of tungsten films
US6833161B2 (en) 2002-02-26 2004-12-21 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US6720027B2 (en) 2002-04-08 2004-04-13 Applied Materials, Inc. Cyclical deposition of a variable content titanium silicon nitride layer
US6932871B2 (en) 2002-04-16 2005-08-23 Applied Materials, Inc. Multi-station deposition apparatus and method
US7374617B2 (en) 2002-04-25 2008-05-20 Micron Technology, Inc. Atomic layer deposition methods and chemical vapor deposition methods
US7160577B2 (en) 2002-05-02 2007-01-09 Micron Technology, Inc. Methods for atomic-layer deposition of aluminum oxides in integrated circuits
US7135421B2 (en) 2002-06-05 2006-11-14 Micron Technology, Inc. Atomic layer-deposited hafnium aluminum oxide
US6838125B2 (en) * 2002-07-10 2005-01-04 Applied Materials, Inc. Method of film deposition using activated precursor gases
US7186385B2 (en) 2002-07-17 2007-03-06 Applied Materials, Inc. Apparatus for providing gas to a processing chamber
KR100464855B1 (ko) * 2002-07-26 2005-01-06 삼성전자주식회사 박막 형성 방법과, 이를 이용한 커패시터 형성 방법 및트랜지스터 형성 방법
US6921702B2 (en) 2002-07-30 2005-07-26 Micron Technology Inc. Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics
US7199023B2 (en) * 2002-08-28 2007-04-03 Micron Technology, Inc. Atomic layer deposited HfSiON dielectric films wherein each precursor is independendently pulsed
US7084078B2 (en) 2002-08-29 2006-08-01 Micron Technology, Inc. Atomic layer deposited lanthanide doped TiOx dielectric films
JP4113755B2 (ja) * 2002-10-03 2008-07-09 東京エレクトロン株式会社 処理装置
US6958302B2 (en) 2002-12-04 2005-10-25 Micron Technology, Inc. Atomic layer deposited Zr-Sn-Ti-O films using TiI4
US7101813B2 (en) 2002-12-04 2006-09-05 Micron Technology Inc. Atomic layer deposited Zr-Sn-Ti-O films
US20040144980A1 (en) * 2003-01-27 2004-07-29 Ahn Kie Y. Atomic layer deposition of metal oxynitride layers as gate dielectrics and semiconductor device structures utilizing metal oxynitride layers
US6753248B1 (en) 2003-01-27 2004-06-22 Applied Materials, Inc. Post metal barrier/adhesion film
JP4361747B2 (ja) * 2003-03-04 2009-11-11 東京エレクトロン株式会社 薄膜の形成方法
US7192892B2 (en) 2003-03-04 2007-03-20 Micron Technology, Inc. Atomic layer deposited dielectric layers
JP4009550B2 (ja) * 2003-03-27 2007-11-14 エルピーダメモリ株式会社 金属酸化膜の形成方法
US7135369B2 (en) * 2003-03-31 2006-11-14 Micron Technology, Inc. Atomic layer deposited ZrAlxOy dielectric layers including Zr4AlO9
US7094691B2 (en) * 2003-04-09 2006-08-22 Sharp Laboratories Of America, Inc. MOCVD of tungsten nitride thin films using W(CO)6 and NH3 for copper barrier applications
US7183186B2 (en) 2003-04-22 2007-02-27 Micro Technology, Inc. Atomic layer deposited ZrTiO4 films
US7914847B2 (en) 2003-05-09 2011-03-29 Asm America, Inc. Reactor surface passivation through chemical deactivation
KR101090895B1 (ko) * 2003-05-09 2011-12-08 에이에스엠 아메리카, 인코포레이티드 화학적 비활성화를 통한 반응기 표면의 패시베이션
US7378129B2 (en) 2003-08-18 2008-05-27 Micron Technology, Inc. Atomic layer deposition methods of forming conductive metal nitride comprising layers
US6943097B2 (en) * 2003-08-19 2005-09-13 International Business Machines Corporation Atomic layer deposition of metallic contacts, gates and diffusion barriers
US7235482B2 (en) * 2003-09-08 2007-06-26 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing a contact interconnection layer containing a metal and nitrogen by atomic layer deposition for deep sub-micron semiconductor technology
US20050056219A1 (en) * 2003-09-16 2005-03-17 Tokyo Electron Limited Formation of a metal-containing film by sequential gas exposure in a batch type processing system
CN100377357C (zh) * 2003-10-22 2008-03-26 松下电器产业株式会社 半导体装置及其制造方法
US7071118B2 (en) * 2003-11-12 2006-07-04 Veeco Instruments, Inc. Method and apparatus for fabricating a conformal thin film on a substrate
US20050145177A1 (en) * 2003-12-30 2005-07-07 Mcswiney Michael Method and apparatus for low temperature silicon nitride deposition
KR100560654B1 (ko) * 2004-01-08 2006-03-16 삼성전자주식회사 질화실리콘막을 형성을 위한 질소화합물 및 이를 이용한질화실리콘 막의 형성방법
US8119210B2 (en) 2004-05-21 2012-02-21 Applied Materials, Inc. Formation of a silicon oxynitride layer on a high-k dielectric material
US8323754B2 (en) 2004-05-21 2012-12-04 Applied Materials, Inc. Stabilization of high-k dielectric materials
US7601649B2 (en) 2004-08-02 2009-10-13 Micron Technology, Inc. Zirconium-doped tantalum oxide films
US7081421B2 (en) 2004-08-26 2006-07-25 Micron Technology, Inc. Lanthanide oxide dielectric layer
US7494939B2 (en) 2004-08-31 2009-02-24 Micron Technology, Inc. Methods for forming a lanthanum-metal oxide dielectric layer
US7588988B2 (en) 2004-08-31 2009-09-15 Micron Technology, Inc. Method of forming apparatus having oxide films formed using atomic layer deposition
US7235501B2 (en) 2004-12-13 2007-06-26 Micron Technology, Inc. Lanthanum hafnium oxide dielectrics
US7560395B2 (en) 2005-01-05 2009-07-14 Micron Technology, Inc. Atomic layer deposited hafnium tantalum oxide dielectrics
US7399666B2 (en) * 2005-02-15 2008-07-15 Micron Technology, Inc. Atomic layer deposition of Zr3N4/ZrO2 films as gate dielectrics
US20060216548A1 (en) * 2005-03-22 2006-09-28 Ming Mao Nanolaminate thin films and method for forming the same using atomic layer deposition
US7687409B2 (en) 2005-03-29 2010-03-30 Micron Technology, Inc. Atomic layer deposited titanium silicon oxide films
US7220671B2 (en) * 2005-03-31 2007-05-22 Intel Corporation Organometallic precursors for the chemical phase deposition of metal films in interconnect applications
US7217660B1 (en) 2005-04-19 2007-05-15 Spansion Llc Method for manufacturing a semiconductor component that inhibits formation of wormholes
US9202758B1 (en) 2005-04-19 2015-12-01 Globalfoundries Inc. Method for manufacturing a contact for a semiconductor component and related structure
US7390756B2 (en) 2005-04-28 2008-06-24 Micron Technology, Inc. Atomic layer deposited zirconium silicon oxide films
US7662729B2 (en) 2005-04-28 2010-02-16 Micron Technology, Inc. Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer
US7572695B2 (en) 2005-05-27 2009-08-11 Micron Technology, Inc. Hafnium titanium oxide films
US20060272577A1 (en) * 2005-06-03 2006-12-07 Ming Mao Method and apparatus for decreasing deposition time of a thin film
US7767363B2 (en) * 2005-06-24 2010-08-03 Micron Technology, Inc. Methods for photo-processing photo-imageable material
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US7989290B2 (en) 2005-08-04 2011-08-02 Micron Technology, Inc. Methods for forming rhodium-based charge traps and apparatus including rhodium-based charge traps
US7575978B2 (en) 2005-08-04 2009-08-18 Micron Technology, Inc. Method for making conductive nanoparticle charge storage element
US8110469B2 (en) 2005-08-30 2012-02-07 Micron Technology, Inc. Graded dielectric layers
US7582562B2 (en) 2005-10-06 2009-09-01 Micron Technology, Inc. Atomic layer deposition methods
US7524765B2 (en) * 2005-11-02 2009-04-28 Intel Corporation Direct tailoring of the composition and density of ALD films
WO2007142690A2 (en) 2005-11-04 2007-12-13 Applied Materials, Inc. Apparatus and process for plasma-enhanced atomic layer deposition
KR100870820B1 (ko) 2005-12-29 2008-11-27 매그나칩 반도체 유한회사 이미지 센서 및 그의 제조방법
US7709402B2 (en) 2006-02-16 2010-05-04 Micron Technology, Inc. Conductive layers for hafnium silicon oxynitride films
JP4816185B2 (ja) * 2006-03-24 2011-11-16 Ｊｆｅスチール株式会社 チタン化合物の成膜方法
US7563730B2 (en) 2006-08-31 2009-07-21 Micron Technology, Inc. Hafnium lanthanide oxynitride films
US8741062B2 (en) * 2008-04-22 2014-06-03 Picosun Oy Apparatus and methods for deposition reactors
US20100062149A1 (en) 2008-09-08 2010-03-11 Applied Materials, Inc. Method for tuning a deposition rate during an atomic layer deposition process
GB0918129D0 (en) 2009-10-16 2009-12-02 British American Tobacco Co Control of puff profile
WO2011049816A2 (en) 2009-10-20 2011-04-28 Asm International N.V. Processes for passivating dielectric films
US8293658B2 (en) * 2010-02-17 2012-10-23 Asm America, Inc. Reactive site deactivation against vapor deposition
CN102471885A (zh) * 2010-04-01 2012-05-23 乔治洛德方法研究和开发液化空气有限公司 使用氨基金属与卤化金属前体组合的含金属氮化物的薄膜沉积
JP5541223B2 (ja) * 2010-07-29 2014-07-09 東京エレクトロン株式会社 成膜方法及び成膜装置
US9223203B2 (en) 2011-07-08 2015-12-29 Asm International N.V. Microcontact printed films as an activation layer for selective atomic layer deposition
US9412602B2 (en) * 2013-03-13 2016-08-09 Asm Ip Holding B.V. Deposition of smooth metal nitride films
BR112016006911B1 (pt) * 2013-10-04 2022-01-11 Basf Se Método para formar um revestimento liso de superfície decorativa, produto de papel ou papelão, e, uso de um produto de papel ou papelão
FI126970B (en) * 2014-12-22 2017-08-31 Picosun Oy Atomic layer cultivation in which the first and second species of source materials are present simultaneously
WO2019104021A1 (en) 2017-11-21 2019-05-31 Watlow Electric Manufacturing Company Ceramic pedestal having atomic protective layer
CN114438472A (zh) * 2022-01-21 2022-05-06 亚芯半导体材料(江苏)有限公司 集成电路芯片用大尺寸超高纯钒溅射靶材及其制备工艺

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI118158B (sv) * 1999-10-15 2007-07-31 Asm Int Förfarande för modifiering av utgångsämneskemikalierna i en ALD-prosess
US3640689A (en) * 1970-03-04 1972-02-08 Fansteel Inc Composite hard metal product
SE393967B (sv) 1974-11-29 1977-05-31 Sateko Oy Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket
US4803127A (en) 1983-02-25 1989-02-07 Liburdi Engineering Limited Vapor deposition of metal compound coating utilizing metal sub-halides and coated metal article
JPH0780718B2 (ja) * 1989-08-04 1995-08-30 トヨタ自動車株式会社 ダイヤモンドの合成方法および合成装置
US5054420A (en) * 1989-09-29 1991-10-08 Alcan International Limited Use of a particulate packed bed at the inlet of a vertical tube MOCVD reactor to achieve desired gas flow characteristics
US5160544A (en) * 1990-03-20 1992-11-03 Diamonex Incorporated Hot filament chemical vapor deposition reactor
US5254210A (en) * 1992-04-27 1993-10-19 The United States Of America As Represented By The Secretary Of The Army Method and apparatus for growing semiconductor heterostructures
US5342652A (en) 1992-06-15 1994-08-30 Materials Research Corporation Method of nucleating tungsten on titanium nitride by CVD without silane
FI100409B (fi) 1994-11-28 1997-11-28 Asm Int Menetelmä ja laitteisto ohutkalvojen valmistamiseksi
FI97731C (fi) 1994-11-28 1997-02-10 Mikrokemia Oy Menetelmä ja laite ohutkalvojen valmistamiseksi
EP0742847B1 (en) 1994-11-30 2000-05-24 Micron Technology, Inc. A method of depositing tungsten nitride using a source gas comprising silicon
KR0155918B1 (ko) 1995-11-03 1998-12-01 김광호 선택적 텅스텐질화박막을 이용한 반도체장치의 캐패시터 형성방법
US5855678A (en) * 1997-04-30 1999-01-05 Sri International Fluidized bed reactor to deposit a material on a surface by chemical vapor deposition, and methods of forming a coated substrate therewith
US5913145A (en) 1997-08-28 1999-06-15 Texas Instruments Incorporated Method for fabricating thermally stable contacts with a diffusion barrier formed at high temperatures
US6305314B1 (en) * 1999-03-11 2001-10-23 Genvs, Inc. Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
JP3694433B2 (ja) * 1999-07-30 2005-09-14 沖電気工業株式会社 半導体装置の製造方法
TW576873B (en) * 2000-04-14 2004-02-21 Asm Int Method of growing a thin film onto a substrate
KR100447248B1 (ko) * 2002-01-22 2004-09-07 주성엔지니어링(주) Ｉｃｐ 에쳐용 가스 확산판
KR100481008B1 (ko) * 2002-06-03 2005-04-07 주성엔지니어링(주) 화학기상증착공정용 기체 가열장치 및 이를 이용한반도체소자 제조방법
US6838125B2 (en) * 2002-07-10 2005-01-04 Applied Materials, Inc. Method of film deposition using activated precursor gases
US6915592B2 (en) * 2002-07-29 2005-07-12 Applied Materials, Inc. Method and apparatus for generating gas to a processing chamber

Also Published As

Publication number Publication date
EP1230421A1 (en) 2002-08-14
EP1230421B1 (en) 2005-04-27
TW500826B (en) 2002-09-01
JP5047434B2 (ja) 2012-10-10
AU7925700A (en) 2001-04-23
US20050000431A1 (en) 2005-01-06
FI19992233A (fi) 2001-04-16
JP2003511560A (ja) 2003-03-25
KR20020040876A (ko) 2002-05-30
DE60019789T2 (de) 2006-01-19
US6767582B1 (en) 2004-07-27
KR100697453B1 (ko) 2007-03-20
DE60019789D1 (de) 2005-06-02
WO2001027346A1 (en) 2001-04-19

Similar Documents

Publication Publication Date Title
FI118158B (sv) Förfarande för modifiering av utgångsämneskemikalierna i en ALD-prosess
FI117944B (fi) Menetelmä siirtymämetallinitridiohutkalvojen kasvattamiseksi
US6800552B2 (en) Deposition of transition metal carbides
US7638170B2 (en) Low resistivity metal carbonitride thin film deposition by atomic layer deposition
JP4938962B2 (ja) ゲッタリング反応物を用いるａｌｄによる金属窒化物堆積
WO2001029280A1 (en) Deposition of transition metal carbides
WO2007000186A1 (en) Deposition method of ternary films
US20080145535A1 (en) Cyclic Chemical Vapor Deposition of Metal-Silicon Containing Films
US6365231B2 (en) Ammonium halide eliminator, chemical vapor deposition system and chemical vapor deposition process
JP2007039806A (ja) 成膜方法、成膜装置及び記憶媒体
US9085823B2 (en) Method of forming a tantalum-containing layer on a substrate
JP2023134421A (ja) 還元性共反応物の存在下でタングステンまたはモリブデン層を堆積させる方法
JP2003524888A (ja) 感受性表面上にナノラミネート薄膜を堆積するための方法
Prieur et al. Conformal atomic layer deposition of TA-based diffusion barrier film using a novel mono-guanidinate precursor
FI117943B (fi) Menetelmä alkuaineohutkalvojen kasvattamiseksi
WO2023086298A1 (en) Molybdenum precursor compounds
WO2019204382A1 (en) Low temperature molybdenum film depositon utilizing boron nucleation layers

Legal Events

Date Code Title Description
FG Patent granted

Ref document number: 118158

Country of ref document: FI