FI112005B - Sähköisesti moduloitavissa oleva terminen säteilylähde - Google Patents
Sähköisesti moduloitavissa oleva terminen säteilylähde Download PDFInfo
- Publication number
- FI112005B FI112005B FI955657A FI955657A FI112005B FI 112005 B FI112005 B FI 112005B FI 955657 A FI955657 A FI 955657A FI 955657 A FI955657 A FI 955657A FI 112005 B FI112005 B FI 112005B
- Authority
- FI
- Finland
- Prior art keywords
- radiation
- layer
- filament
- source according
- source
- Prior art date
Links
- 230000005855 radiation Effects 0.000 title claims description 42
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 238000009529 body temperature measurement Methods 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000010408 film Substances 0.000 description 14
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 8
- 229910052796 boron Inorganic materials 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 238000005275 alloying Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 241000255969 Pieris brassicae Species 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 238000012886 linear function Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01K—ELECTRIC INCANDESCENT LAMPS
- H01K7/00—Lamps for purposes other than general lighting
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/10—Arrangements of light sources specially adapted for spectrometry or colorimetry
- G01J3/108—Arrangements of light sources specially adapted for spectrometry or colorimetry for measurement in the infrared range
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01K—ELECTRIC INCANDESCENT LAMPS
- H01K1/00—Details
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/16—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor the conductor being mounted on an insulating base
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Resistance Heating (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FI955657A FI112005B (fi) | 1995-11-24 | 1995-11-24 | Sähköisesti moduloitavissa oleva terminen säteilylähde |
| DE69615635T DE69615635T2 (de) | 1995-11-24 | 1996-11-15 | Elektrisch modulierbare Wärmestrahlungsquelle |
| EP96660084A EP0776023B1 (de) | 1995-11-24 | 1996-11-15 | Elektrisch modulierbare Wärmestrahlungsquelle |
| US08/754,128 US5827438A (en) | 1995-11-24 | 1996-11-22 | Electrically modulatable thermal radiant source with specific filament |
| JP8311951A JPH09184757A (ja) | 1995-11-24 | 1996-11-22 | 電気変調可能な熱放射源 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FI955657A FI112005B (fi) | 1995-11-24 | 1995-11-24 | Sähköisesti moduloitavissa oleva terminen säteilylähde |
| FI955657 | 1995-11-24 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| FI955657A0 FI955657A0 (fi) | 1995-11-24 |
| FI955657A FI955657A (fi) | 1997-05-25 |
| FI112005B true FI112005B (fi) | 2003-10-15 |
Family
ID=8544434
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FI955657A FI112005B (fi) | 1995-11-24 | 1995-11-24 | Sähköisesti moduloitavissa oleva terminen säteilylähde |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5827438A (de) |
| EP (1) | EP0776023B1 (de) |
| JP (1) | JPH09184757A (de) |
| DE (1) | DE69615635T2 (de) |
| FI (1) | FI112005B (de) |
Families Citing this family (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19808132B4 (de) * | 1997-02-27 | 2009-10-29 | Ust Umweltsensortechnik Gmbh | Bauelement zum Senden und Empfangen von infraroter Strahlung |
| US5955839A (en) * | 1997-03-26 | 1999-09-21 | Quantum Vision, Inc. | Incandescent microcavity lightsource having filament spaced from reflector at node of wave emitted |
| US6796866B2 (en) * | 1999-07-08 | 2004-09-28 | California Institute Of Technology | Silicon micromachined broad band light source |
| WO2002080620A1 (en) * | 2001-03-28 | 2002-10-10 | Ecole Polytechnique Federale De Lausanne (Epfl) | High temperature micro-hotplate |
| ITTO20010341A1 (it) * | 2001-04-10 | 2002-10-10 | Fiat Ricerche | Sorgente di luce a matrice di microfilamenti. |
| DE602004027521D1 (de) * | 2003-10-27 | 2010-07-15 | Panasonic Elec Works Co Ltd | Infrarotes licht emittierendes bauelement und gassensor damit |
| ATE384413T1 (de) * | 2003-11-20 | 2008-02-15 | Koninkl Philips Electronics Nv | Dünnschichtheizelement |
| NO321281B1 (no) * | 2004-09-15 | 2006-04-18 | Sintef | Infrarod kilde |
| DE102004046705A1 (de) * | 2004-09-24 | 2006-03-30 | Eads Deutschland Gmbh | Mikromechanisch hergestellter Infrarotstrahler |
| GB0500393D0 (en) * | 2005-01-10 | 2005-02-16 | Univ Warwick | Microheaters |
| JP2006331752A (ja) * | 2005-05-25 | 2006-12-07 | Matsushita Electric Works Ltd | 赤外線放射素子 |
| US7846391B2 (en) | 2006-05-22 | 2010-12-07 | Lumencor, Inc. | Bioanalytical instrumentation using a light source subsystem |
| WO2007141826A1 (ja) | 2006-05-26 | 2007-12-13 | Nalux Co., Ltd. | 赤外光源 |
| WO2007139022A1 (ja) * | 2006-05-26 | 2007-12-06 | Nalux Co., Ltd. | 赤外光源およびその製造方法 |
| US7709811B2 (en) | 2007-07-03 | 2010-05-04 | Conner Arlie R | Light emitting diode illumination system |
| US8098375B2 (en) | 2007-08-06 | 2012-01-17 | Lumencor, Inc. | Light emitting diode illumination system |
| JP2010145296A (ja) * | 2008-12-19 | 2010-07-01 | Panasonic Electric Works Co Ltd | 赤外線放射素子及びその製造方法 |
| US8242462B2 (en) | 2009-01-23 | 2012-08-14 | Lumencor, Inc. | Lighting design of high quality biomedical devices |
| US8859303B2 (en) * | 2010-01-21 | 2014-10-14 | Cambridge Cmos Sensors Ltd. | IR emitter and NDIR sensor |
| US9214604B2 (en) | 2010-01-21 | 2015-12-15 | Cambridge Cmos Sensors Limited | Plasmonic IR devices |
| US8410560B2 (en) * | 2010-01-21 | 2013-04-02 | Cambridge Cmos Sensors Ltd. | Electromigration reduction in micro-hotplates |
| US8466436B2 (en) | 2011-01-14 | 2013-06-18 | Lumencor, Inc. | System and method for metered dosage illumination in a bioanalysis or other system |
| US8389957B2 (en) | 2011-01-14 | 2013-03-05 | Lumencor, Inc. | System and method for metered dosage illumination in a bioanalysis or other system |
| JP5639528B2 (ja) * | 2011-04-21 | 2014-12-10 | パナソニック株式会社 | 赤外線放射素子、赤外線光源 |
| JP6165763B2 (ja) * | 2011-12-01 | 2017-07-19 | コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． | Ｉｒエミッタの温度変調および電力消費を改善するための構造設計およびプロセス |
| US8967811B2 (en) | 2012-01-20 | 2015-03-03 | Lumencor, Inc. | Solid state continuous white light source |
| KR102132359B1 (ko) | 2012-05-08 | 2020-07-10 | 사이오센스 비.브이. | 적외선 에미터 및 비분산 적외선 센서 |
| EP2848914A4 (de) * | 2012-05-09 | 2015-10-21 | Panasonic Ip Man Co Ltd | Infrarotstrahlungselement |
| US9217561B2 (en) | 2012-06-15 | 2015-12-22 | Lumencor, Inc. | Solid state light source for photocuring |
| JP2014032078A (ja) * | 2012-08-02 | 2014-02-20 | Panasonic Corp | 赤外線放射素子 |
| EP2762865A1 (de) * | 2013-01-31 | 2014-08-06 | Sensirion Holding AG | Chemische Sensor und Verfahren zur Herstellung solch eines chemischen Sensors |
| TW201432860A (zh) * | 2013-02-01 | 2014-08-16 | Oriental System Technology Inc | 晶片型紅外線發射器封裝件 |
| JP6242229B2 (ja) * | 2014-02-10 | 2017-12-06 | 矢崎総業株式会社 | 赤外光源 |
| EP3104721B1 (de) * | 2014-02-10 | 2020-10-14 | Philip Morris Products S.a.s. | Aerosolerzeugungssystem mit flüssigkeitsdurchlässiger heizungsanordnung |
| CN104817054B (zh) * | 2015-05-05 | 2016-08-17 | 广州大学 | 微弹簧式悬臂梁自带均热板微加热器及其制备工艺 |
| DE102015222072B4 (de) * | 2015-11-10 | 2019-03-28 | Robert Bosch Gmbh | Heizvorrichtung für MEMS-Sensor |
| FI127446B (en) * | 2016-10-28 | 2018-06-15 | Teknologian Tutkimuskeskus Vtt Oy | Infrared transmitter with layered structure |
| US10680150B2 (en) * | 2017-08-15 | 2020-06-09 | Dragan Grubisik | Electrically conductive-semitransparent solid state infrared emitter apparatus and method of use thereof |
| US10299344B2 (en) * | 2017-08-15 | 2019-05-21 | Davorin Babic | Dual emission layer solid state infrared emitter apparatus and method of use thereof |
| US10636777B2 (en) | 2017-12-22 | 2020-04-28 | Ams Sensors Uk Limited | Infra-red device |
| US10883804B2 (en) | 2017-12-22 | 2021-01-05 | Ams Sensors Uk Limited | Infra-red device |
| US11067422B2 (en) | 2018-03-28 | 2021-07-20 | Cambridge Gan Devices Limited | Thermal fluid flow sensor |
| US10593826B2 (en) | 2018-03-28 | 2020-03-17 | Cambridge Gan Devices Limited | Infra-red devices |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE68921124T2 (de) * | 1988-08-25 | 1995-07-20 | Toshiba Lighting & Technology | Heizstreifen. |
| US5021711A (en) * | 1990-10-29 | 1991-06-04 | Gte Products Corporation | Quartz lamp envelope with molybdenum foil having oxidation-resistant surface formed by ion implantation |
| US5285131A (en) * | 1990-12-03 | 1994-02-08 | University Of California - Berkeley | Vacuum-sealed silicon incandescent light |
| US5464966A (en) * | 1992-10-26 | 1995-11-07 | The United States Of America As Represented By The Secretary Of Commerce | Micro-hotplate devices and methods for their fabrication |
| FI101911B1 (fi) * | 1993-04-07 | 1998-09-15 | Valtion Teknillinen | Sähköisesti moduloitava terminen säteilylähde ja menetelmä sen valmistamiseksi |
| FI110727B (fi) * | 1994-06-23 | 2003-03-14 | Vaisala Oyj | Sähköisesti moduloitava terminen säteilylähde |
-
1995
- 1995-11-24 FI FI955657A patent/FI112005B/fi not_active IP Right Cessation
-
1996
- 1996-11-15 DE DE69615635T patent/DE69615635T2/de not_active Expired - Lifetime
- 1996-11-15 EP EP96660084A patent/EP0776023B1/de not_active Expired - Lifetime
- 1996-11-22 US US08/754,128 patent/US5827438A/en not_active Expired - Lifetime
- 1996-11-22 JP JP8311951A patent/JPH09184757A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US5827438A (en) | 1998-10-27 |
| DE69615635T2 (de) | 2002-07-11 |
| EP0776023B1 (de) | 2001-10-04 |
| DE69615635D1 (de) | 2001-11-08 |
| EP0776023A2 (de) | 1997-05-28 |
| FI955657A0 (fi) | 1995-11-24 |
| EP0776023A3 (de) | 1997-11-05 |
| JPH09184757A (ja) | 1997-07-15 |
| FI955657A (fi) | 1997-05-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GB | Transfer or assigment of application |
Owner name: VAISALA OY |
|
| MM | Patent lapsed |