ES8707774A1 - Procedimiento para la produccion de estructuras metalicas sobre superficies no conductoras, inorganicas - Google Patents

Procedimiento para la produccion de estructuras metalicas sobre superficies no conductoras, inorganicas

Info

Publication number
ES8707774A1
ES8707774A1 ES554048A ES554048A ES8707774A1 ES 8707774 A1 ES8707774 A1 ES 8707774A1 ES 554048 A ES554048 A ES 554048A ES 554048 A ES554048 A ES 554048A ES 8707774 A1 ES8707774 A1 ES 8707774A1
Authority
ES
Spain
Prior art keywords
objects
conductors
manufacture
inorganic non
metallic structures
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES554048A
Other languages
English (en)
Other versions
ES554048A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bayer Pharma AG
Original Assignee
Schering AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schering AG filed Critical Schering AG
Publication of ES8707774A1 publication Critical patent/ES8707774A1/es
Publication of ES554048A0 publication Critical patent/ES554048A0/es
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/51—Metallising, e.g. infiltration of sintered ceramic preforms with molten metal
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C04B41/88—Metals
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemically Coating (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • ing And Chemical Polishing (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Chemical Vapour Deposition (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
  • Chemical Treatment Of Metals (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)

Abstract

METODO DE PRODUCIR ESTRUCTURAS METALICAS SOBRE SUPERFICIES NO CONDUCTORAS, INORGANICAS. COMPRENDE: A) TRATAR LAS ESTRUCTURAS BARNIZADAS O CUBIERTAS CON GASES REACTIVOS QUE CONTIENEN HALOGENO, EN UN REACTOR DE PLASMA, A 150JC, A UNA FRECUENCIA DE 15,56 MHZ, UNA DENSIDAD POTENCIAL DE 1,6 WATIOS/CM Y A UNA PRESION DE 0,5 HPA, PARA INCANDESCER LAS ESTRUCTURAS Y RETIRAR EL AGENTE DE CUBRICION; B) METALIZAR LAS ESTRUCTURAS DE (A) CON ATOMIZACION O PULVERIZACION CATODICA; Y C) TRATAR LAS ESTRUCTURAS METALICAS CON SOLUCIONES ACUOSAS FORMADORAS DE COMPLEJO, ACIDOS O ALCALIS, PARA REFORZARLAS. EL GAS QUE CONTIENE HALOGENO ES TETRACLORURO DE SILICIO. SE UTILIZA EN PROCESOS DE FABRICACION.
ES554048A 1985-04-16 1986-04-16 Procedimiento para la produccion de estructuras metalicas sobre superficies no conductoras, inorganicas Expired ES8707774A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19853514094 DE3514094A1 (de) 1985-04-16 1985-04-16 Herstellung metallischer strukturen auf anorganischen nichtleitern

Publications (2)

Publication Number Publication Date
ES8707774A1 true ES8707774A1 (es) 1987-09-01
ES554048A0 ES554048A0 (es) 1987-09-01

Family

ID=6268528

Family Applications (1)

Application Number Title Priority Date Filing Date
ES554048A Expired ES8707774A1 (es) 1985-04-16 1986-04-16 Procedimiento para la produccion de estructuras metalicas sobre superficies no conductoras, inorganicas

Country Status (8)

Country Link
US (1) US4980197A (es)
EP (1) EP0199114B1 (es)
JP (1) JPS61291963A (es)
CN (1) CN1015005B (es)
AT (1) AT392086B (es)
CA (1) CA1290720C (es)
DE (2) DE3514094A1 (es)
ES (1) ES8707774A1 (es)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2695410B1 (fr) * 1992-09-04 1994-11-18 France Telecom Procédé de prétraitement d'un substrat pour le dépôt sélectif de tungstène.
GB9317170D0 (en) * 1993-08-18 1993-10-06 Applied Vision Ltd Improvements in physical vapour deposition apparatus
WO1995027570A1 (en) * 1994-04-08 1995-10-19 Ray Mark A Selective plasma deposition

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USB509825I5 (es) * 1965-11-26
US3677799A (en) * 1970-11-10 1972-07-18 Celanese Corp Vapor phase boron deposition by pulse discharge
DE2139297A1 (de) * 1971-08-05 1973-02-15 Siemens Ag Verfahren zur herstellung gitterfoermiger, elektrisch leitfaehiger belegungen
US3776762A (en) * 1971-10-18 1973-12-04 Kote Corp Du Dry lubrication
GB1423952A (en) * 1973-06-26 1976-02-04 Oike & Co Process for preparing a metallized resin film for condenser element
US3978249A (en) * 1974-04-29 1976-08-31 Asg Industries, Inc. Method for producing intricate metal designs on glass
US4322457A (en) * 1978-01-25 1982-03-30 Western Electric Co., Inc. Method of selectively depositing a metal on a surface
DE2851101C2 (de) * 1978-11-25 1980-09-18 Ulrich 7110 Oehringen Wagner Verfahren zum Gravieren von Werkstückflachen durch Ätzen
JPS55157233A (en) * 1979-05-28 1980-12-06 Hitachi Ltd Method and apparatus for monitoring etching
EP0049400B1 (en) * 1980-09-22 1984-07-11 Kabushiki Kaisha Toshiba Method of smoothing an insulating layer formed on a semiconductor body
JPS5767938A (en) * 1980-10-16 1982-04-24 Canon Inc Production of photoconductive member
CH649099A5 (en) * 1981-05-04 1985-04-30 Euro Varnish B V Process for obtaining metallised or highly reflective surfaces employing an aqueous varnish
JPS57186321A (en) * 1981-05-12 1982-11-16 Fuji Electric Corp Res & Dev Ltd Producing method for amorphous silicon film
US4401687A (en) * 1981-11-12 1983-08-30 Advanced Semiconductor Materials America Plasma deposition of silicon
DE3204425A1 (de) * 1982-02-09 1983-08-25 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung freitragender metallgitterstrukturen
DE3204846A1 (de) * 1982-02-11 1983-08-18 Schott Glaswerke, 6500 Mainz Plasmaverfahren zur innenbeschichtung von glasrohren
DE3205345A1 (de) * 1982-02-15 1983-09-01 Philips Patentverwaltung Gmbh, 2000 Hamburg "verfahren zur herstellung von fluordotierten lichtleitfasern"
US4422897A (en) * 1982-05-25 1983-12-27 Massachusetts Institute Of Technology Process for selectively etching silicon
JPH0635323B2 (ja) * 1982-06-25 1994-05-11 株式会社日立製作所 表面処理方法
US4450042A (en) * 1982-07-06 1984-05-22 Texas Instruments Incorporated Plasma etch chemistry for anisotropic etching of silicon
US4517223A (en) * 1982-09-24 1985-05-14 Sovonics Solar Systems Method of making amorphous semiconductor alloys and devices using microwave energy
JPS5978987A (ja) * 1982-10-29 1984-05-08 マルイ工業株式会社 金属被膜上へのパタ−ン形成方法
DE3334419A1 (de) * 1983-09-23 1985-04-04 Brown, Boveri & Cie Ag, 6800 Mannheim Verfahren zur verstaerkung von metallisierten flaechen auf halbleiterleistungsbauelementen oder keramiksubstraten
JPS6077429A (ja) * 1983-10-04 1985-05-02 Asahi Glass Co Ltd ドライエツチング方法
US4613400A (en) * 1985-05-20 1986-09-23 Applied Materials, Inc. In-situ photoresist capping process for plasma etching

Also Published As

Publication number Publication date
EP0199114A2 (de) 1986-10-29
DE3514094A1 (de) 1986-10-23
CN1015005B (zh) 1991-12-04
US4980197A (en) 1990-12-25
EP0199114A3 (en) 1988-10-19
JPS61291963A (ja) 1986-12-22
DE3685050D1 (de) 1992-06-04
AT392086B (de) 1991-01-25
DE3514094C2 (es) 1991-10-17
EP0199114B1 (de) 1992-04-29
CA1290720C (en) 1991-10-15
JPH041067B2 (es) 1992-01-09
CN86102468A (zh) 1986-10-15
ES554048A0 (es) 1987-09-01
ATA98486A (de) 1990-07-15

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Legal Events

Date Code Title Description
FD1A Patent lapsed

Effective date: 20000601