CN86102468A - 在无机非导体表面产生金属结构物的方法 - Google Patents

在无机非导体表面产生金属结构物的方法 Download PDF

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Publication number
CN86102468A
CN86102468A CN86102468.0A CN86102468A CN86102468A CN 86102468 A CN86102468 A CN 86102468A CN 86102468 A CN86102468 A CN 86102468A CN 86102468 A CN86102468 A CN 86102468A
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metallic structures
inorganic
works
mentioning according
metallization
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CN1015005B (zh
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哈拉德·苏尔
厄恩斯特·费尤尔
查斯蒂安·奥尔
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Bayer Pharma AG
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Schering AG
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    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/51Metallising, e.g. infiltration of sintered ceramic preforms with molten metal
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81Coating or impregnation
    • C04B41/85Coating or impregnation with inorganic materials
    • C04B41/88Metals
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemically Coating (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Chemical Treatment Of Metals (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)

Abstract

本发明涉及一种在无机非导体表面上产生金属结构物的工艺方法,其特征在于所需结构物在此表面上产生是借助于掩模、漆层或其它保护材料;如此处理的物体在光辐射区中,受到含卤活性气体的作用;在反应结束后,除掉保护材料;用众所周知的物理方法使物体金属化,在金属化之后,为了产生所需的结构物,将物体放入水或络合物、酸、碱的水溶液中,或溶解合成金属卤化物的物质中。

Description

本发明目的是用物理方法-即不用水浸蚀和活性溶液-在无机非导体表面产生金属结构物。就此而论,本发明的特征在于所需的金属结构物可通过正面印相(或以正相形式)方法贴敷在基片上。因此从本质上来说,本发明所涉及的是一种与众所周知方法截然不同的工艺方法,众所周知的方法是不覆盖要镀金属的表面部分,即反掩模敷设在基片上。
本发明不仅导致制造印刷电路的新途径,尤其是在电子学方面制造精细的导体电路和多层电路的新途径,而且,还导致制造装饰用的各种结构物,装饰品及其类似物的新途径。
本发明按照下列步骤实施:
1、基片采用正面印相方法用掩模、感光保护层或丝网漆层覆盖。
2、将上述物体置于光辐射区中,并受到含有卤素的活性气体的作用。
3、除掉掩模或保护层。
4、用习惯方法例如蒸发镀、阴极溅镀,等离子喷镀金属使基片敷以金属层。
5、通过在水或金属络合物水溶液(分别为无机和/或有机化合物)中浸泡基片,“冲洗”出所需的结构物。
当其暴露在含卤气体的等离子区中时,在基片未覆盖的表面产生了活性卤化物。惊人的是在连续的物理的金属喷镀期间,形成的可溶性的金属卤化物可用简单浸泡处理就被除掉,从而在等离子处理期间,喷镀的金属只保留在被覆盖的地方。
在等离子处理时所形成的活性卤化物非常坚固。例如,在连续真空蒸发镀期间它们不会被去掉,在存放若干天后它们仍然完全有效,因此在按照本发明的工艺方法产生这种结构物时,确保得到可靠的实施结果。
按照本发明的工艺方法制得的金属结构物可用众所周知的方法进行强化,最好用连续镀铜的方法或在电镀槽里化学镀镍的方法,以便强化金属镀层。
所有常见的无机非导体,尤其是氧化铝陶瓷、氧化硅陶瓷、玻璃以及有氧化层的金属如铝都能当作基片使用。
含卤素的最合适的气体是三氯化硼、四氯化硅、三氟化硼和四氯化碳。
用以下实例说明本发明:
实例1
在氧化铝陶瓷上产生蒸发镀金的结构物
用丝网喷漆或其它常用的工艺方法,将所需的导体图形贴敷在尺寸为50×50×2毫米的陶瓷片上。
陶瓷片在下列条件下,在等离子反应器中经受等离子处理:
电极温度    150℃
频率    13.56兆赫
功率密度 1.6瓦/厘米2
反应器中的压力    0.5百帕斯卡(hpa)
反应气体    三氯化硼
运载气体    氩
等离子的反应时间    90分钟
陶瓷片在等离子反应结束之后,从反应器中取出来,通过在适当的有机溶液中浸泡,除掉片上丝网漆层。
然后将此片放在普通的,真空蒸发镀用的器具中蒸发镀金。在未涂保护层处(即这些地方直接暴露在等离子中)的金变为溶于水的化合物。蒸发镀以后,此片泡在水里,金化合物被溶解,所需的结构物以一层薄金的形式保留在表面上。
实例2
在氧化硅陶瓷上产生蒸发镀铜的结构物
在一些尺寸为80×40×3毫米的氧化硅陶瓷片上覆盖所需结构物的掩模,并受到与实例1所到条件相同的等离子作用。然后,将这些片子从反应器中取出来,并除掉掩模。
用阴极溅镀法,以普通的方式将其表面敷铜。
然后,将这些片子浸泡在含有5%阿摩尼亚溶液的水中,先前受等离子作用之处的铜层被除掉。这些结构物取决于留在片上的掩模图形。
如果有必要,这些结构物可在化学铜槽里进行强化处理;就此而言,不需要其它的活化处理(例如浸泡在含有贵金属的溶液中)。
如果这些片敷银,而不敷铜,则可得到同样的结果。此处,在等离子处理期间的未覆盖处,在连续浸泡于阿摩尼亚溶液中时,银以配位化合物(complex    compound)的形式被除掉。

Claims (5)

1、在无机非导体表面产生金属结构物的方法其特征在于:
所需结构物在表面上形成是借助于掩模、漆层或其它的覆盖材料;
如此处理过的物体在光辐射区内受到含卤活性气体的作用;
在反应结束后,除掉覆盖材料;
物体用众所周知的物理方法进行金属化;
在金属化之后,为了产生所需的结构物,将此物体放入水中,或络合物、酸、碱的水溶液中,或溶解合成的金属卤化物的物质中。
2、根据权利要求1提到的方法,其特征在于将三氯化硼、四氯化硅、三氟化硼或四氯化碳当作含卤气体使用。
3、根据权利要求1提到的方法,其特征在于使物体金属化处理是用蒸发镀、阴极溅镀或等离子金属喷镀的方法。
4、根据权利要求1至3提到的方法,其特征在于通过在电镀金属用的化学(自动催化的)电镀槽中的处理,使金属结构物强化。
5、根据权利要求1和4提到的方法,其特征在于在物理的金属化处理后,通过在电镀金属用的化学电镀槽中浸泡,就直接形成结构物。
CN86102468A 1985-04-16 1986-04-16 在无机非导体表面上制造金属构形的方法 Expired CN1015005B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DEP3514094.1 1985-04-16
DE19853514094 DE3514094A1 (de) 1985-04-16 1985-04-16 Herstellung metallischer strukturen auf anorganischen nichtleitern

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CN86102468A true CN86102468A (zh) 1986-10-15
CN1015005B CN1015005B (zh) 1991-12-04

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EP (1) EP0199114B1 (zh)
JP (1) JPS61291963A (zh)
CN (1) CN1015005B (zh)
AT (1) AT392086B (zh)
CA (1) CA1290720C (zh)
DE (2) DE3514094A1 (zh)
ES (1) ES8707774A1 (zh)

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FR2695410B1 (fr) * 1992-09-04 1994-11-18 France Telecom Procédé de prétraitement d'un substrat pour le dépôt sélectif de tungstène.
GB9317170D0 (en) * 1993-08-18 1993-10-06 Applied Vision Ltd Improvements in physical vapour deposition apparatus
EP0706425A4 (en) * 1994-04-08 1997-12-29 Mark A Ray SELECTIVE PLASMA DEPOSIT

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DE3514094C2 (zh) 1991-10-17
ATA98486A (de) 1990-07-15
EP0199114A2 (de) 1986-10-29
JPH041067B2 (zh) 1992-01-09
CN1015005B (zh) 1991-12-04
DE3685050D1 (de) 1992-06-04
AT392086B (de) 1991-01-25
CA1290720C (en) 1991-10-15
ES8707774A1 (es) 1987-09-01
JPS61291963A (ja) 1986-12-22
DE3514094A1 (de) 1986-10-23
US4980197A (en) 1990-12-25
ES554048A0 (es) 1987-09-01
EP0199114A3 (en) 1988-10-19
EP0199114B1 (de) 1992-04-29

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