ES8609817A1 - Perfeccionamientos en un circuito integrado monolitico, pro-tegido contra cambio de polaridad - Google Patents

Perfeccionamientos en un circuito integrado monolitico, pro-tegido contra cambio de polaridad

Info

Publication number
ES8609817A1
ES8609817A1 ES549433A ES549433A ES8609817A1 ES 8609817 A1 ES8609817 A1 ES 8609817A1 ES 549433 A ES549433 A ES 549433A ES 549433 A ES549433 A ES 549433A ES 8609817 A1 ES8609817 A1 ES 8609817A1
Authority
ES
Spain
Prior art keywords
metal layer
semiconductor device
device provided
top surface
thermal shock
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES549433A
Other languages
English (en)
Other versions
ES549433A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of ES549433A0 publication Critical patent/ES549433A0/es
Publication of ES8609817A1 publication Critical patent/ES8609817A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H01L23/5283—Cross-sectional geometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Bipolar Transistors (AREA)

Abstract

CIRCUITO INTEGRADO MONOLITICO PROTEGIDO CONTRA CAMBIO DE POLARIDAD. SE TRATA DE UNA DISPOSICION DE SEMICONDUCTOR CON METALIZACIONES (1, 2) QUE EN ZONAS CON CARGA TERMICA A IMPULSOS PRESENTAN UNA SUPERFICIE ESTRUCTURADA. POR DEBAJO DE LA METALIZACION (1) SE DISPONE UNA ESTRUCTURA MEDIANTE ALMAS DE OXIDO (16) QUE PRODUCEN OTRA ESTRUCTURA CORRESPONDIENTE EN LA SUPERFICIE DE LA METALIZACION. LA APARICION DE ALTAS CARGAS TERMICAS A IMPULSOS ORIGINAN DIFERENTES DILATACIONES LONGITUDINALES DEL MATERIAL SEMICONDUCTOR Y DE LA METALIZACION (1), MOTIVAN EN ESTA DIFERENTES TENSIONES MECANICAS QUE, POR LAS CARACTERISTICAS DE LA SUPERFICIE ESTRUCTURADA, NO DAN LUGAR A FISURACION O ROTURA DE AQUELLA.
ES549433A 1984-11-30 1985-11-29 Perfeccionamientos en un circuito integrado monolitico, pro-tegido contra cambio de polaridad Expired ES8609817A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE3443771A DE3443771C2 (de) 1984-11-30 1984-11-30 Halbleiteranordnung mit Metallisierung

Publications (2)

Publication Number Publication Date
ES549433A0 ES549433A0 (es) 1986-07-16
ES8609817A1 true ES8609817A1 (es) 1986-07-16

Family

ID=6251612

Family Applications (1)

Application Number Title Priority Date Filing Date
ES549433A Expired ES8609817A1 (es) 1984-11-30 1985-11-29 Perfeccionamientos en un circuito integrado monolitico, pro-tegido contra cambio de polaridad

Country Status (6)

Country Link
EP (1) EP0202254B1 (es)
JP (1) JP2583487B2 (es)
BR (1) BR8507084A (es)
DE (2) DE3443771C2 (es)
ES (1) ES8609817A1 (es)
WO (1) WO1986003340A1 (es)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5013720A (en) * 1986-05-06 1991-05-07 Abbott Laboratories SAP-6-Val proteins and methods
DE4226429A1 (de) * 1992-08-10 1994-02-17 Bosch Gmbh Robert Halbleiteranordnung

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5183275U (es) * 1974-12-26 1976-07-03
JPS55138273A (en) * 1979-04-11 1980-10-28 Fujitsu Ltd Transistor
EP0154685B1 (en) * 1980-01-25 1990-04-18 Kabushiki Kaisha Toshiba Semiconductor memory device
JPS57207353A (en) * 1981-06-16 1982-12-20 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit
JPS5878472A (ja) * 1981-11-04 1983-05-12 Nec Corp 半導体装置
JPS593968A (ja) * 1982-06-29 1984-01-10 Mitsubishi Electric Corp 半導体集積回路装置
JPS5984553A (ja) * 1982-11-08 1984-05-16 Fujitsu Ltd 半導体装置の製造方法
JPS59169154A (ja) * 1983-03-16 1984-09-25 Fujitsu Ltd 半導体装置の製造方法
JPS60160121A (ja) * 1984-01-30 1985-08-21 Mitsubishi Electric Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS62501112A (ja) 1987-04-30
BR8507084A (pt) 1987-03-31
EP0202254B1 (de) 1990-06-13
DE3443771C2 (de) 1994-05-26
ES549433A0 (es) 1986-07-16
JP2583487B2 (ja) 1997-02-19
EP0202254A1 (de) 1986-11-26
DE3443771A1 (de) 1986-06-05
DE3578268D1 (de) 1990-07-19
WO1986003340A1 (en) 1986-06-05

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Legal Events

Date Code Title Description
FD1A Patent lapsed

Effective date: 20041102