ES8608233A1 - Una pila fotovoltaica de gran area, formada sobre un subs- trato electricamente aislante - Google Patents
Una pila fotovoltaica de gran area, formada sobre un subs- trato electricamente aislanteInfo
- Publication number
- ES8608233A1 ES8608233A1 ES539922A ES539922A ES8608233A1 ES 8608233 A1 ES8608233 A1 ES 8608233A1 ES 539922 A ES539922 A ES 539922A ES 539922 A ES539922 A ES 539922A ES 8608233 A1 ES8608233 A1 ES 8608233A1
- Authority
- ES
- Spain
- Prior art keywords
- small
- area
- photovoltaic cell
- area segments
- cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000000565 sealant Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
PILA FOTOVOLTAICA DE GRAN AREA. COMPRENDE: UNA PLURALIDAD DE SEGMENTOS DE PEQUEÑA AREA QUE PUEDEN CONECTARSE ENTRE SI, Y CADA UNO DE ELLOS INCLUYE: UN SUSTRATO (11) ELECTRICAMENTE AISLANTE QUE SEPARA CADA SEGMENTO (10) DE LOS CONTIGUOS, REALIZADO EN VIDRIO O POLIMEROS ORGANICOS; TRES SUBELEMENTOS (12A, 12B, 12C) DE TIPO P-I-N, BAJO LAS CUALES SE ENCUENTRA EL PRIMER ELECTRODO (14), REALIZADO EN UN METAL ALTAMENTE ELECTROCONDUCTIVO; UN SEGUNDO ELECTRODO SITUADO SOBRE EL SUBELEMENTO (12C), REALIZADO EN UN MATERIAL DE OXIDO CONDUCTIVO TRANSPARENTE, COMO OXIDO DE INDIO O ESTAÑO; Y UNA REJILLA COLECTORA DE CORRIENTE (24) COLOCADA SOBRE EL SEGUNDO ELECTRODO. SIENDO: P, POSITIVO; I, INTRINSECO; N NEGATIVO.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/575,373 US4514579A (en) | 1984-01-30 | 1984-01-30 | Large area photovoltaic cell and method for producing same |
Publications (2)
Publication Number | Publication Date |
---|---|
ES8608233A1 true ES8608233A1 (es) | 1986-06-01 |
ES539922A0 ES539922A0 (es) | 1986-06-01 |
Family
ID=24300061
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES539922A Expired ES8608233A1 (es) | 1984-01-30 | 1985-01-29 | Una pila fotovoltaica de gran area, formada sobre un subs- trato electricamente aislante |
Country Status (9)
Country | Link |
---|---|
US (1) | US4514579A (es) |
EP (1) | EP0153041A3 (es) |
JP (1) | JPS60182178A (es) |
AU (1) | AU3813885A (es) |
BR (1) | BR8500307A (es) |
CA (1) | CA1219941A (es) |
ES (1) | ES8608233A1 (es) |
IN (1) | IN160571B (es) |
ZA (1) | ZA85490B (es) |
Families Citing this family (78)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4878097A (en) * | 1984-05-15 | 1989-10-31 | Eastman Kodak Company | Semiconductor photoelectric conversion device and method for making same |
US4950614A (en) * | 1984-05-15 | 1990-08-21 | Semiconductor Energy Laboratory Co., Ltd. | Method of making a tandem type semiconductor photoelectric conversion device |
US4650524A (en) * | 1984-06-20 | 1987-03-17 | Sanyo Electric Co., Ltd | Method for dividing semiconductor film formed on a substrate into plural regions by backside energy beam irradiation |
US4746962A (en) * | 1984-08-29 | 1988-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method of making the same |
US4754544A (en) * | 1985-01-30 | 1988-07-05 | Energy Conversion Devices, Inc. | Extremely lightweight, flexible semiconductor device arrays |
JPH0624251B2 (ja) * | 1986-01-08 | 1994-03-30 | 富士通株式会社 | 光半導体装置 |
JPH0744286B2 (ja) * | 1986-03-04 | 1995-05-15 | 三菱電機株式会社 | 非晶質光発電素子モジュールの製造方法 |
US5155565A (en) * | 1988-02-05 | 1992-10-13 | Minnesota Mining And Manufacturing Company | Method for manufacturing an amorphous silicon thin film solar cell and Schottky diode on a common substrate |
US4882239A (en) * | 1988-03-08 | 1989-11-21 | Minnesota Mining And Manufacturing Company | Light-rechargeable battery |
JPH01231378A (ja) * | 1988-03-11 | 1989-09-14 | Fuji Electric Co Ltd | 太陽電池 |
JPH029453U (es) * | 1988-06-30 | 1990-01-22 | ||
WO1992007386A1 (en) * | 1990-10-15 | 1992-04-30 | United Solar Systems Corporation | Monolithic solar cell array and method for its manufacture |
US7732243B2 (en) * | 1995-05-15 | 2010-06-08 | Daniel Luch | Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
US8664030B2 (en) | 1999-03-30 | 2014-03-04 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US8138413B2 (en) * | 2006-04-13 | 2012-03-20 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US8222513B2 (en) | 2006-04-13 | 2012-07-17 | Daniel Luch | Collector grid, electrode structures and interconnect structures for photovoltaic arrays and methods of manufacture |
US8076568B2 (en) * | 2006-04-13 | 2011-12-13 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US20090111206A1 (en) | 1999-03-30 | 2009-04-30 | Daniel Luch | Collector grid, electrode structures and interrconnect structures for photovoltaic arrays and methods of manufacture |
US7507903B2 (en) * | 1999-03-30 | 2009-03-24 | Daniel Luch | Substrate and collector grid structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
AU767581B2 (en) * | 1999-08-25 | 2003-11-20 | Kaneka Corporation | Thin film photoelectric conversion module and method of manufacturing the same |
US7898053B2 (en) * | 2000-02-04 | 2011-03-01 | Daniel Luch | Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
US8198696B2 (en) | 2000-02-04 | 2012-06-12 | Daniel Luch | Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
US7898054B2 (en) * | 2000-02-04 | 2011-03-01 | Daniel Luch | Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
US20110067754A1 (en) * | 2000-02-04 | 2011-03-24 | Daniel Luch | Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
US8334451B2 (en) * | 2003-10-03 | 2012-12-18 | Ixys Corporation | Discrete and integrated photo voltaic solar cells |
US9865758B2 (en) | 2006-04-13 | 2018-01-09 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US9236512B2 (en) | 2006-04-13 | 2016-01-12 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US8884155B2 (en) | 2006-04-13 | 2014-11-11 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US8729385B2 (en) | 2006-04-13 | 2014-05-20 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US8822810B2 (en) | 2006-04-13 | 2014-09-02 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US9006563B2 (en) | 2006-04-13 | 2015-04-14 | Solannex, Inc. | Collector grid and interconnect structures for photovoltaic arrays and modules |
US7982127B2 (en) * | 2006-12-29 | 2011-07-19 | Industrial Technology Research Institute | Thin film solar cell module of see-through type |
KR20100095426A (ko) * | 2007-11-02 | 2010-08-30 | 어플라이드 머티어리얼스, 인코포레이티드 | 증착 공정들 간의 플라즈마 처리 |
US20090139567A1 (en) * | 2007-11-29 | 2009-06-04 | Philip Chihchau Liu | Conformal protective coating for solar panel |
US7723206B2 (en) * | 2007-12-05 | 2010-05-25 | Fujifilm Corporation | Photodiode |
US8933320B2 (en) | 2008-01-18 | 2015-01-13 | Tenksolar, Inc. | Redundant electrical architecture for photovoltaic modules |
US8748727B2 (en) * | 2008-01-18 | 2014-06-10 | Tenksolar, Inc. | Flat-plate photovoltaic module |
US8212139B2 (en) | 2008-01-18 | 2012-07-03 | Tenksolar, Inc. | Thin-film photovoltaic module |
CN101499438B (zh) * | 2008-01-31 | 2011-02-09 | 财团法人工业技术研究院 | 透光型薄膜太阳能电池模块及其制造方法 |
US8129613B2 (en) * | 2008-02-05 | 2012-03-06 | Twin Creeks Technologies, Inc. | Photovoltaic cell comprising a thin lamina having low base resistivity and method of making |
US20100032010A1 (en) * | 2008-08-10 | 2010-02-11 | Twin Creeks Technologies, Inc. | Method to mitigate shunt formation in a photovoltaic cell comprising a thin lamina |
US20100031995A1 (en) * | 2008-08-10 | 2010-02-11 | Twin Creeks Technologies, Inc. | Photovoltaic module comprising thin laminae configured to mitigate efficiency loss due to shunt formation |
US8338209B2 (en) * | 2008-08-10 | 2012-12-25 | Twin Creeks Technologies, Inc. | Photovoltaic cell comprising a thin lamina having a rear junction and method of making |
US20100059119A1 (en) * | 2008-09-09 | 2010-03-11 | Electronics And Telecommunications Research Institute | Solar cell and method of manufacturing the same |
JP4726962B2 (ja) * | 2009-01-09 | 2011-07-20 | シャープ株式会社 | 薄膜太陽電池モジュール及び薄膜太陽電池アレイ |
US20110303281A1 (en) | 2009-02-26 | 2011-12-15 | Tomoya Kodama | Method for manufacturing thin film compound solar cell |
EP2443666A4 (en) * | 2009-06-15 | 2013-06-05 | Tenksolar Inc | SOLAR PANEL INDEPENDENT OF LIGHTING |
WO2011032741A2 (en) * | 2009-09-16 | 2011-03-24 | International Business Machines Corporation | Method for manufacturing a thin-film photovoltaic cell module encompassing an array of cells and photovoltaic cell module |
JP2013506988A (ja) * | 2009-09-30 | 2013-02-28 | エルジー イノテック カンパニー リミテッド | 太陽光発電装置 |
US9012766B2 (en) | 2009-11-12 | 2015-04-21 | Silevo, Inc. | Aluminum grid as backside conductor on epitaxial silicon thin film solar cells |
US9773933B2 (en) | 2010-02-23 | 2017-09-26 | Tenksolar, Inc. | Space and energy efficient photovoltaic array |
US8829330B2 (en) | 2010-02-23 | 2014-09-09 | Tenksolar, Inc. | Highly efficient solar arrays |
DE102010017246A1 (de) * | 2010-06-04 | 2011-12-08 | Solibro Gmbh | Solarzellenmodul und Herstellungsverfahren hierfür |
US9214576B2 (en) | 2010-06-09 | 2015-12-15 | Solarcity Corporation | Transparent conducting oxide for photovoltaic devices |
US9299861B2 (en) | 2010-06-15 | 2016-03-29 | Tenksolar, Inc. | Cell-to-grid redundandt photovoltaic system |
US9773928B2 (en) | 2010-09-10 | 2017-09-26 | Tesla, Inc. | Solar cell with electroplated metal grid |
US9800053B2 (en) | 2010-10-08 | 2017-10-24 | Tesla, Inc. | Solar panels with integrated cell-level MPPT devices |
US9054256B2 (en) | 2011-06-02 | 2015-06-09 | Solarcity Corporation | Tunneling-junction solar cell with copper grid for concentrated photovoltaic application |
WO2013098426A1 (es) * | 2011-12-27 | 2013-07-04 | Teknia Manufacturing Group, S. L. | Módulo de concentración solar fotovoltáica |
AU2013326971B2 (en) | 2012-10-04 | 2016-06-30 | Tesla, Inc. | Photovoltaic devices with electroplated metal grids |
US9865754B2 (en) | 2012-10-10 | 2018-01-09 | Tesla, Inc. | Hole collectors for silicon photovoltaic cells |
US9281436B2 (en) | 2012-12-28 | 2016-03-08 | Solarcity Corporation | Radio-frequency sputtering system with rotary target for fabricating solar cells |
US9412884B2 (en) | 2013-01-11 | 2016-08-09 | Solarcity Corporation | Module fabrication of solar cells with low resistivity electrodes |
US9219174B2 (en) | 2013-01-11 | 2015-12-22 | Solarcity Corporation | Module fabrication of solar cells with low resistivity electrodes |
US10074755B2 (en) | 2013-01-11 | 2018-09-11 | Tesla, Inc. | High efficiency solar panel |
US9624595B2 (en) | 2013-05-24 | 2017-04-18 | Solarcity Corporation | Electroplating apparatus with improved throughput |
CN105917472B (zh) * | 2014-01-13 | 2018-11-09 | 光城公司 | 高效率太阳能面板 |
US10309012B2 (en) | 2014-07-03 | 2019-06-04 | Tesla, Inc. | Wafer carrier for reducing contamination from carbon particles and outgassing |
US9899546B2 (en) | 2014-12-05 | 2018-02-20 | Tesla, Inc. | Photovoltaic cells with electrodes adapted to house conductive paste |
US9947822B2 (en) | 2015-02-02 | 2018-04-17 | Tesla, Inc. | Bifacial photovoltaic module using heterojunction solar cells |
US9761744B2 (en) | 2015-10-22 | 2017-09-12 | Tesla, Inc. | System and method for manufacturing photovoltaic structures with a metal seed layer |
KR101769687B1 (ko) * | 2015-12-09 | 2017-08-21 | 숭실대학교산학협력단 | 연속형 전기전자 소자 및 그 제조 방법 |
US9842956B2 (en) | 2015-12-21 | 2017-12-12 | Tesla, Inc. | System and method for mass-production of high-efficiency photovoltaic structures |
US9496429B1 (en) | 2015-12-30 | 2016-11-15 | Solarcity Corporation | System and method for tin plating metal electrodes |
US10115838B2 (en) | 2016-04-19 | 2018-10-30 | Tesla, Inc. | Photovoltaic structures with interlocking busbars |
JP2018006515A (ja) * | 2016-06-30 | 2018-01-11 | 三菱ケミカル株式会社 | 太陽電池モジュール、及び太陽電池発電システム |
US10672919B2 (en) | 2017-09-19 | 2020-06-02 | Tesla, Inc. | Moisture-resistant solar cells for solar roof tiles |
US11190128B2 (en) | 2018-02-27 | 2021-11-30 | Tesla, Inc. | Parallel-connected solar roof tile modules |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4281208A (en) * | 1979-02-09 | 1981-07-28 | Sanyo Electric Co., Ltd. | Photovoltaic device and method of manufacturing thereof |
JPS55115372A (en) * | 1979-02-27 | 1980-09-05 | Sanyo Electric Co Ltd | Photovoltaic device |
AU535443B2 (en) * | 1979-03-20 | 1984-03-22 | Sanyo Electric Co., Ltd. | Sunlight into energy conversion apparatus |
US4255208A (en) * | 1979-05-25 | 1981-03-10 | Ramot University Authority For Applied Research And Industrial Development Ltd. | Method of producing monocrystalline semiconductor films utilizing an intermediate water dissolvable salt layer |
US4410558A (en) * | 1980-05-19 | 1983-10-18 | Energy Conversion Devices, Inc. | Continuous amorphous solar cell production system |
US4315096A (en) * | 1980-07-25 | 1982-02-09 | Eastman Kodak Company | Integrated array of photovoltaic cells having minimized shorting losses |
US4401887A (en) * | 1980-10-01 | 1983-08-30 | Eikonix Corporation | Reducing flare in self-scanned photosensor arrays |
EP0106854A1 (en) * | 1982-04-27 | 1984-05-02 | The Australian National University | Arrays of polarised energy-generating elements |
-
1984
- 1984-01-30 US US06/575,373 patent/US4514579A/en not_active Expired - Lifetime
-
1985
- 1985-01-18 CA CA000472362A patent/CA1219941A/en not_active Expired
- 1985-01-22 ZA ZA85490A patent/ZA85490B/xx unknown
- 1985-01-24 BR BR8500307A patent/BR8500307A/pt unknown
- 1985-01-28 JP JP60014155A patent/JPS60182178A/ja active Pending
- 1985-01-29 AU AU38138/85A patent/AU3813885A/en not_active Abandoned
- 1985-01-29 ES ES539922A patent/ES8608233A1/es not_active Expired
- 1985-01-29 EP EP19850300584 patent/EP0153041A3/en not_active Withdrawn
- 1985-02-13 IN IN116/DEL/85A patent/IN160571B/en unknown
Also Published As
Publication number | Publication date |
---|---|
CA1219941A (en) | 1987-03-31 |
EP0153041A3 (en) | 1985-11-13 |
AU3813885A (en) | 1985-08-08 |
BR8500307A (pt) | 1985-09-03 |
IN160571B (es) | 1987-07-18 |
JPS60182178A (ja) | 1985-09-17 |
ZA85490B (en) | 1986-03-26 |
EP0153041A2 (en) | 1985-08-28 |
ES539922A0 (es) | 1986-06-01 |
US4514579A (en) | 1985-04-30 |
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