WO1987001513A3 - Gallium arsenide solar cell system - Google Patents
Gallium arsenide solar cell system Download PDFInfo
- Publication number
- WO1987001513A3 WO1987001513A3 PCT/US1986/001845 US8601845W WO8701513A3 WO 1987001513 A3 WO1987001513 A3 WO 1987001513A3 US 8601845 W US8601845 W US 8601845W WO 8701513 A3 WO8701513 A3 WO 8701513A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- solar cell
- gallium arsenide
- solar cells
- faces
- solar
- Prior art date
Links
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title abstract 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 title abstract 5
- 238000003491 array Methods 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
An N-on-P gallium arsenide solar cell, and solar cell arrays incorporating N-on-P gallium arsenide solar cells. In the N-on-P gallium arsenide solar cell, the n-type gallium arsenide faces the sun. The solar cell arrays utilize geometrically alternating, laterally disposed N-on-P solar cells and P-on-N solar cells. Series electrical connections between adjacent solar cells in the array are accomplished by connecting the lower faces of a first and a second solar cell, the upper faces of the second and a third solar cell, and so forth in an alternating pattern. The connections between the upper faces can be eliminated entirely by placing pairs of the N-on-P and P-on-N solar cells in lateral contact to form a module, extending a connector grid across the upper surface of the module, and using strip connectors to joint the bases of adjacent modules.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US77369685A | 1985-09-09 | 1985-09-09 | |
US773,696 | 1985-09-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO1987001513A2 WO1987001513A2 (en) | 1987-03-12 |
WO1987001513A3 true WO1987001513A3 (en) | 1987-05-21 |
Family
ID=25099033
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1986/001845 WO1987001513A2 (en) | 1985-09-09 | 1986-09-08 | Gallium arsenide solar cell system |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0236447A1 (en) |
IL (1) | IL79993A0 (en) |
WO (1) | WO1987001513A2 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4753683A (en) * | 1985-09-09 | 1988-06-28 | Hughes Aircraft Company | Gallium arsenide solar cell system |
JP3578539B2 (en) * | 1996-02-08 | 2004-10-20 | 三菱電機株式会社 | Solar cell manufacturing method and solar cell structure |
DE102006021804A1 (en) * | 2006-05-09 | 2007-11-15 | International Solar Energy Research Center Konstanz E.V. | Solar cell module and method for the production of solar cell modules |
JP5153097B2 (en) * | 2006-07-31 | 2013-02-27 | 三洋電機株式会社 | Solar cell module |
CN106816479A (en) * | 2016-12-27 | 2017-06-09 | 中国电子科技集团公司第十八研究所 | Flexible solar cell array suitable for near space ultra-long time-of-flight aircraft |
FR3100382A1 (en) * | 2019-09-02 | 2021-03-05 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Photovoltaic module with conductive strips and associated manufacturing method |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3888698A (en) * | 1972-11-09 | 1975-06-10 | Communications Satellite Corp | Infrared-transparent solar cell |
WO1979000813A1 (en) * | 1978-03-22 | 1979-10-18 | Massachusetts Inst Technology | Shallow-homojunction solar cells |
-
1986
- 1986-09-08 WO PCT/US1986/001845 patent/WO1987001513A2/en unknown
- 1986-09-08 EP EP86905633A patent/EP0236447A1/en not_active Withdrawn
- 1986-09-09 IL IL79993A patent/IL79993A0/en unknown
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3888698A (en) * | 1972-11-09 | 1975-06-10 | Communications Satellite Corp | Infrared-transparent solar cell |
WO1979000813A1 (en) * | 1978-03-22 | 1979-10-18 | Massachusetts Inst Technology | Shallow-homojunction solar cells |
Non-Patent Citations (6)
Title |
---|
Applied Physics Letters, Volume 36, No. 1, 1 January 1980, American Institute of Physics, (Woodbury, New York, US), J.C.C. FAN et al.: "Shallow-Homojunction GaAs Cells with High Resistance to 1-MeV Electron Radiation", pages 53-56, see the whole document * |
Applied Physics Letters, Volume 46, No. 8, 15 April 1985, American Institute of Physics, (Woodbury, New York, US), J.G. WERTHEN et al.: "18.7% Efficient (1-sun, AMO) Large-Area GaAs Solar Cells", pages 776-778 see the whole document * |
JEE Journal of Electronic Engineering, Volume 19, No. 186, June 1982, (Tokyo, JP), Y. YUKIMOTO: "Research Advances for GaAs Solar Cells", pages 39-42 see figures 1-4 * |
Revue de Physique Appliquee, Volume 17, No. 7, July 1982, (Orsay, FR), M. LE METAYER et al.: "Une Photopile a Haut Rendement pour Utilisation Spatiale", pages 415-419, see paragraph 2 * |
The Conference Record of the Fifteenth IEEE Photovoltaic Specialists Conference-1981, 12-15 May 1981, Kissimmee, Florida, (IEEE, US), G.W. TURNER et al.: "GaAs Shallow-Homojunction Concentrator Solar Cells", pages 151-155 see the whole document * |
The Conference Record of the Fifteenth IEEE Photovoltaic Specialists Conference-1981, 12-15 May 1981, Kissimmee, Florida, (IEEE, US), J.C.C. FAN et al.: "Thin-Film GaAs Solar Cells", pages 666-672 see Abstract * |
Also Published As
Publication number | Publication date |
---|---|
EP0236447A1 (en) | 1987-09-16 |
IL79993A0 (en) | 1986-12-31 |
WO1987001513A2 (en) | 1987-03-12 |
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