ES8101782A1 - Detector de radiaciones de estado solido - Google Patents
Detector de radiaciones de estado solidoInfo
- Publication number
- ES8101782A1 ES8101782A1 ES486947A ES486947A ES8101782A1 ES 8101782 A1 ES8101782 A1 ES 8101782A1 ES 486947 A ES486947 A ES 486947A ES 486947 A ES486947 A ES 486947A ES 8101782 A1 ES8101782 A1 ES 8101782A1
- Authority
- ES
- Spain
- Prior art keywords
- layer
- nickel
- thickness
- selenium
- solid state
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005855 radiation Effects 0.000 title abstract 2
- 239000007787 solid Substances 0.000 title abstract 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 abstract 4
- 239000011669 selenium Substances 0.000 abstract 3
- 229910052711 selenium Inorganic materials 0.000 abstract 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- 229910003437 indium oxide Inorganic materials 0.000 abstract 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000005083 Zinc sulfide Substances 0.000 abstract 1
- 238000010521 absorption reaction Methods 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- DDSPUNTXKUFWTM-UHFFFAOYSA-N oxygen(2-);tin(4+) Chemical compound [O-2].[O-2].[Sn+4] DDSPUNTXKUFWTM-UHFFFAOYSA-N 0.000 abstract 1
- 229910001887 tin oxide Inorganic materials 0.000 abstract 1
- 229910052984 zinc sulfide Inorganic materials 0.000 abstract 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
- G01T1/2914—Measurement of spatial distribution of radiation
- G01T1/2921—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras
- G01T1/2928—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras using solid state detectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/301—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to very short wavelength, e.g. being sensitive to X-rays, gamma-rays or corpuscular radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/191—Photoconductor image sensors
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Light Receiving Elements (AREA)
- Measurement Of Radiation (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/969,545 US4233514A (en) | 1978-12-14 | 1978-12-14 | Solid state radiation detector and arrays thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| ES486947A0 ES486947A0 (es) | 1980-12-16 |
| ES8101782A1 true ES8101782A1 (es) | 1980-12-16 |
Family
ID=25515670
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES486947A Expired ES8101782A1 (es) | 1978-12-14 | 1979-12-14 | Detector de radiaciones de estado solido |
| ES494233A Granted ES494233A0 (es) | 1978-12-14 | 1980-08-13 | Conjunto de detectores de radiacion de estado solido |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES494233A Granted ES494233A0 (es) | 1978-12-14 | 1980-08-13 | Conjunto de detectores de radiacion de estado solido |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4233514A (https=) |
| JP (1) | JPS55104776A (https=) |
| DE (1) | DE2949862A1 (https=) |
| ES (2) | ES8101782A1 (https=) |
| FR (1) | FR2444341B1 (https=) |
| GB (1) | GB2037077B (https=) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5670673A (en) * | 1979-11-14 | 1981-06-12 | Hitachi Ltd | Photoelectric converter |
| US4363969A (en) * | 1980-07-16 | 1982-12-14 | Ong Poen S | Light switched segmented tomography detector |
| JPS58117478A (ja) * | 1982-01-05 | 1983-07-13 | Fuji Xerox Co Ltd | 放射線ｃｔスキャナ装置用放射線センサアレイ |
| JPS58182572A (ja) * | 1982-04-20 | 1983-10-25 | Toshiba Corp | 二次元放射線検出器 |
| JPS6243586A (ja) * | 1985-08-21 | 1987-02-25 | Nippon Mining Co Ltd | 放射線検出器 |
| FR2601499B1 (fr) * | 1986-07-08 | 1988-09-30 | Thomson Csf | Detecteur d'image a photoconducteur a memoire |
| FR2605167B1 (fr) * | 1986-10-10 | 1989-03-31 | Thomson Csf | Capteur d'images electrostatique |
| KR890702257A (ko) * | 1987-10-15 | 1989-12-23 | 원본 미기재 | 저 노이즈 광검출 및 그것을 위한 광 검출기 |
| DE4227096A1 (de) * | 1992-08-17 | 1994-02-24 | Philips Patentverwaltung | Röntgenbilddetektor |
| DE69637638D1 (de) * | 1995-09-12 | 2008-09-25 | Philips Intellectual Property | Röntgenbildsensor |
| JP3805100B2 (ja) | 1997-04-10 | 2006-08-02 | キヤノン株式会社 | 光電変換装置 |
| JP4059463B2 (ja) * | 1998-12-10 | 2008-03-12 | 株式会社島津製作所 | 放射線検出装置 |
| JP3832615B2 (ja) * | 1999-08-26 | 2006-10-11 | 株式会社島津製作所 | 放射線検出装置 |
| JP4225531B2 (ja) * | 2001-02-07 | 2009-02-18 | 京セミ株式会社 | 放射線検出器および放射線検出素子 |
| US7138290B2 (en) * | 2004-12-03 | 2006-11-21 | Micron Technology, Inc. | Methods of depositing silver onto a metal selenide-comprising surface and methods of depositing silver onto a selenium-comprising surface |
| US7507512B2 (en) * | 2005-11-29 | 2009-03-24 | General Electric Company | Particle-in-binder X-ray sensitive coating using polyimide binder |
| WO2013082721A1 (en) | 2011-12-09 | 2013-06-13 | Karim Karim S | Radiation detector system and method of manufacture |
| EP3322342B1 (en) | 2015-07-14 | 2023-11-22 | DOSE Smart Imaging | Apparatus for radiation detection in a digital imaging system |
| US9698193B1 (en) | 2016-09-15 | 2017-07-04 | Ka Imaging Inc. | Multi-sensor pixel architecture for use in a digital imaging system |
| CN110132326B (zh) * | 2019-05-16 | 2021-08-17 | 京东方科技集团股份有限公司 | Msm型探测器及其偏置电压调整方法和装置 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2706792A (en) * | 1951-05-25 | 1955-04-19 | Gen Electric | X-ray detection |
| US2706791A (en) * | 1951-06-18 | 1955-04-19 | Gen Electric | Semi-conductor |
| US3602721A (en) * | 1967-11-20 | 1971-08-31 | Malsushita Electric Ind Co Ltd | Photoelectric device with enhanced photoconductive sensitivity and storage effect of input radiation |
| BE758451A (fr) * | 1969-11-07 | 1971-04-16 | Siemens Ag | Detecteur pour le comptage de particules nucleaires et de rayons x" |
| DE2107928A1 (en) * | 1971-02-19 | 1972-10-05 | Siemens Ag | Radiation-sensitive resistance cell - contg selenium layer as sensitive element |
| DE2141934A1 (de) * | 1971-08-20 | 1973-03-01 | Siemens Ag | Strahlenmessgeraet |
| DE2361635A1 (de) * | 1973-12-11 | 1975-06-12 | Eichinger Peter | Halbleiter-gammastrahlungsdetektor |
| US4085327A (en) * | 1977-01-14 | 1978-04-18 | General Electric Company | Direct charge readout electron radiography apparatus with improved signal-to-noise ratio |
| GB1559664A (en) * | 1977-02-17 | 1980-01-23 | Tokyo Shibaura Electric Co | Semiconductor radiation detector |
-
1978
- 1978-12-14 US US05/969,545 patent/US4233514A/en not_active Expired - Lifetime
-
1979
- 1979-12-10 GB GB7942553A patent/GB2037077B/en not_active Expired
- 1979-12-12 DE DE19792949862 patent/DE2949862A1/de not_active Ceased
- 1979-12-14 ES ES486947A patent/ES8101782A1/es not_active Expired
- 1979-12-14 JP JP16169279A patent/JPS55104776A/ja active Granted
- 1979-12-14 FR FR7930667A patent/FR2444341B1/fr not_active Expired
-
1980
- 1980-08-13 ES ES494233A patent/ES494233A0/es active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6257954B2 (https=) | 1987-12-03 |
| ES486947A0 (es) | 1980-12-16 |
| ES8105482A1 (es) | 1981-05-16 |
| JPS55104776A (en) | 1980-08-11 |
| FR2444341B1 (fr) | 1985-10-04 |
| DE2949862A1 (de) | 1980-07-03 |
| GB2037077B (en) | 1983-04-13 |
| US4233514A (en) | 1980-11-11 |
| GB2037077A (en) | 1980-07-02 |
| FR2444341A1 (fr) | 1980-07-11 |
| ES494233A0 (es) | 1981-05-16 |
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