ES486947A0 - Detector de radiaciones de estado solido - Google Patents

Detector de radiaciones de estado solido

Info

Publication number
ES486947A0
ES486947A0 ES486947A ES486947A ES486947A0 ES 486947 A0 ES486947 A0 ES 486947A0 ES 486947 A ES486947 A ES 486947A ES 486947 A ES486947 A ES 486947A ES 486947 A0 ES486947 A0 ES 486947A0
Authority
ES
Spain
Prior art keywords
solid state
radiation detector
state radiation
detector
solid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
ES486947A
Other languages
English (en)
Other versions
ES8101782A1 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of ES486947A0 publication Critical patent/ES486947A0/es
Publication of ES8101782A1 publication Critical patent/ES8101782A1/es
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
    • G01T1/2914—Measurement of spatial distribution of radiation
    • G01T1/2921—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras
    • G01T1/2928—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras using solid state detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/085—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors the device being sensitive to very short wavelength, e.g. X-ray, Gamma-rays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
ES486947A 1978-12-14 1979-12-14 Detector de radiaciones de estado solido Expired ES8101782A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/969,545 US4233514A (en) 1978-12-14 1978-12-14 Solid state radiation detector and arrays thereof

Publications (2)

Publication Number Publication Date
ES486947A0 true ES486947A0 (es) 1980-12-16
ES8101782A1 ES8101782A1 (es) 1980-12-16

Family

ID=25515670

Family Applications (2)

Application Number Title Priority Date Filing Date
ES486947A Expired ES8101782A1 (es) 1978-12-14 1979-12-14 Detector de radiaciones de estado solido
ES494233A Expired ES8105482A1 (es) 1978-12-14 1980-08-13 Conjunto de detectores de radiacion de estado solido

Family Applications After (1)

Application Number Title Priority Date Filing Date
ES494233A Expired ES8105482A1 (es) 1978-12-14 1980-08-13 Conjunto de detectores de radiacion de estado solido

Country Status (6)

Country Link
US (1) US4233514A (es)
JP (1) JPS55104776A (es)
DE (1) DE2949862A1 (es)
ES (2) ES8101782A1 (es)
FR (1) FR2444341B1 (es)
GB (1) GB2037077B (es)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5670673A (en) * 1979-11-14 1981-06-12 Hitachi Ltd Photoelectric converter
US4363969A (en) * 1980-07-16 1982-12-14 Ong Poen S Light switched segmented tomography detector
JPS58117478A (ja) * 1982-01-05 1983-07-13 Fuji Xerox Co Ltd 放射線ｃｔスキャナ装置用放射線センサアレイ
JPS58182572A (ja) * 1982-04-20 1983-10-25 Toshiba Corp 二次元放射線検出器
JPS6243586A (ja) * 1985-08-21 1987-02-25 Nippon Mining Co Ltd 放射線検出器
FR2601499B1 (fr) * 1986-07-08 1988-09-30 Thomson Csf Detecteur d'image a photoconducteur a memoire
FR2605167B1 (fr) * 1986-10-10 1989-03-31 Thomson Csf Capteur d'images electrostatique
KR890702257A (ko) * 1987-10-15 1989-12-23 원본 미기재 저 노이즈 광검출 및 그것을 위한 광 검출기
DE4227096A1 (de) * 1992-08-17 1994-02-24 Philips Patentverwaltung Röntgenbilddetektor
WO1997010616A1 (en) * 1995-09-12 1997-03-20 Philips Electronics N.V. X-ray image sensor
JP3805100B2 (ja) 1997-04-10 2006-08-02 キヤノン株式会社 光電変換装置
JP4059463B2 (ja) 1998-12-10 2008-03-12 株式会社島津製作所 放射線検出装置
JP3832615B2 (ja) * 1999-08-26 2006-10-11 株式会社島津製作所 放射線検出装置
WO2002063340A1 (fr) * 2001-02-07 2002-08-15 Kyoto Semiconductor Corporation Radiametre et element de detection de radiations
US7138290B2 (en) * 2004-12-03 2006-11-21 Micron Technology, Inc. Methods of depositing silver onto a metal selenide-comprising surface and methods of depositing silver onto a selenium-comprising surface
US7507512B2 (en) * 2005-11-29 2009-03-24 General Electric Company Particle-in-binder X-ray sensitive coating using polyimide binder
US9269838B2 (en) 2011-12-09 2016-02-23 Karim S. Karim Radiation detector system and method of manufacture
EP3322342B1 (en) 2015-07-14 2023-11-22 DOSE Smart Imaging Apparatus for radiation detection in a digital imaging system
US9698193B1 (en) 2016-09-15 2017-07-04 Ka Imaging Inc. Multi-sensor pixel architecture for use in a digital imaging system
CN110132326B (zh) * 2019-05-16 2021-08-17 京东方科技集团股份有限公司 Msm型探测器及其偏置电压调整方法和装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2706792A (en) * 1951-05-25 1955-04-19 Gen Electric X-ray detection
US2706791A (en) * 1951-06-18 1955-04-19 Gen Electric Semi-conductor
US3602721A (en) * 1967-11-20 1971-08-31 Malsushita Electric Ind Co Ltd Photoelectric device with enhanced photoconductive sensitivity and storage effect of input radiation
BE758451A (fr) * 1969-11-07 1971-04-16 Siemens Ag Detecteur pour le comptage de particules nucleaires et de rayons x"
DE2107928A1 (en) * 1971-02-19 1972-10-05 Siemens Ag Radiation-sensitive resistance cell - contg selenium layer as sensitive element
DE2141934A1 (de) * 1971-08-20 1973-03-01 Siemens Ag Strahlenmessgeraet
DE2361635A1 (de) * 1973-12-11 1975-06-12 Eichinger Peter Halbleiter-gammastrahlungsdetektor
US4085327A (en) * 1977-01-14 1978-04-18 General Electric Company Direct charge readout electron radiography apparatus with improved signal-to-noise ratio
GB1559664A (en) * 1977-02-17 1980-01-23 Tokyo Shibaura Electric Co Semiconductor radiation detector

Also Published As

Publication number Publication date
JPS55104776A (en) 1980-08-11
US4233514A (en) 1980-11-11
GB2037077A (en) 1980-07-02
ES494233A0 (es) 1981-05-16
DE2949862A1 (de) 1980-07-03
ES8101782A1 (es) 1980-12-16
FR2444341B1 (fr) 1985-10-04
FR2444341A1 (fr) 1980-07-11
JPS6257954B2 (es) 1987-12-03
GB2037077B (en) 1983-04-13
ES8105482A1 (es) 1981-05-16

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