ES510893A0 - Procedimiento para la fabricacion de semiconductores amorfos - Google Patents

Procedimiento para la fabricacion de semiconductores amorfos

Info

Publication number
ES510893A0
ES510893A0 ES510893A ES510893A ES510893A0 ES 510893 A0 ES510893 A0 ES 510893A0 ES 510893 A ES510893 A ES 510893A ES 510893 A ES510893 A ES 510893A ES 510893 A0 ES510893 A0 ES 510893A0
Authority
ES
Spain
Prior art keywords
procedure
manufacture
amorphous semiconductors
semiconductors
amorphous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
ES510893A
Other languages
English (en)
Spanish (es)
Other versions
ES8402462A1 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Chronar Corp
Original Assignee
Chronar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chronar Corp filed Critical Chronar Corp
Publication of ES8402462A1 publication Critical patent/ES8402462A1/es
Publication of ES510893A0 publication Critical patent/ES510893A0/es
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Photovoltaic Devices (AREA)
  • Silicon Compounds (AREA)
  • Bipolar Transistors (AREA)
  • Formation Of Insulating Films (AREA)
ES510893A 1981-03-11 1982-03-10 Procedimiento para la fabricacion de semiconductores amorfos Granted ES510893A0 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US24270781A 1981-03-11 1981-03-11

Publications (2)

Publication Number Publication Date
ES8402462A1 ES8402462A1 (es) 1984-02-01
ES510893A0 true ES510893A0 (es) 1984-02-01

Family

ID=22915870

Family Applications (1)

Application Number Title Priority Date Filing Date
ES510893A Granted ES510893A0 (es) 1981-03-11 1982-03-10 Procedimiento para la fabricacion de semiconductores amorfos

Country Status (11)

Country Link
EP (1) EP0075007A4 (enrdf_load_html_response)
JP (1) JPS58500360A (enrdf_load_html_response)
KR (1) KR910002764B1 (enrdf_load_html_response)
CA (1) CA1187622A (enrdf_load_html_response)
ES (1) ES510893A0 (enrdf_load_html_response)
HU (1) HU187713B (enrdf_load_html_response)
IN (1) IN156594B (enrdf_load_html_response)
IT (1) IT1150674B (enrdf_load_html_response)
NO (1) NO823744L (enrdf_load_html_response)
OA (1) OA07249A (enrdf_load_html_response)
WO (1) WO1982003069A1 (enrdf_load_html_response)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1245109A (en) * 1983-10-31 1988-11-22 Hsien-Kun Chu Method of forming amorphous polymeric halosilane films and products produced therefrom
FR2555206B1 (fr) * 1983-11-22 1986-05-09 Thomson Csf Procede de depot de silicium amorphe par decomposition thermique a basse temperature et dispositif de mise en oeuvre du procede
DE3441044A1 (de) * 1984-11-09 1986-05-22 Messerschmitt-Bölkow-Blohm GmbH, 8012 Ottobrunn Verfahren zur herstellung von duennschicht-halbleiterelementen, insbesondere solarzellen
US4637895A (en) * 1985-04-01 1987-01-20 Energy Conversion Devices, Inc. Gas mixtures for the vapor deposition of semiconductor material
US4696834A (en) * 1986-02-28 1987-09-29 Dow Corning Corporation Silicon-containing coatings and a method for their preparation
US4762808A (en) * 1987-06-22 1988-08-09 Dow Corning Corporation Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes
US4923719A (en) * 1988-08-22 1990-05-08 Allied-Signal Inc. Method of coating silicon carbide fibers
US5424097A (en) * 1993-09-30 1995-06-13 Specialty Coating Systems, Inc. Continuous vapor deposition apparatus
AU7447896A (en) * 1995-10-18 1997-05-07 Specialty Coating Systems, Inc. Processes for the preparation of octafluoro-{2,2}paracyclophane
JP3808102B2 (ja) * 1995-10-27 2006-08-09 スペシャルティ、コーティング、システムズ、インコーポレイテッド 半導体ウエハ上へのパリレンａｆ４の蒸着方法
US5806319A (en) * 1997-03-13 1998-09-15 Wary; John Method and apparatus for cryogenically cooling a deposition chamber
US5841005A (en) * 1997-03-14 1998-11-24 Dolbier, Jr.; William R. Parylene AF4 synthesis
US6051276A (en) * 1997-03-14 2000-04-18 Alpha Metals, Inc. Internally heated pyrolysis zone
RU2298588C2 (ru) * 2005-07-21 2007-05-10 Общество с Ограниченной Ответственностью "Гелиос" Способ получения вещества, выбранного из ряда тугоплавких металлов или ряда неметаллов: кремний, бор, фосфор, мышьяк, сера
EP1943669A4 (en) 2005-10-05 2012-06-13 Kovio Inc LINEAR AND NETWORKED HIGHLY MOLECULAR POLYSILANES, POLYGERMANES AND COPOLYMERS THEREOF, COMPOSITIONS CONTAINING THEM AND METHOD FOR THE PREPARATION AND USE OF SUCH COMPOUNDS AND COMPOSITIONS
US7799376B2 (en) * 2007-07-27 2010-09-21 Dalsa Semiconductor Inc. Method of controlling film stress in MEMS devices

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USB524765I5 (enrdf_load_html_response) * 1966-02-03 1900-01-01
US3490961A (en) * 1966-12-21 1970-01-20 Sprague Electric Co Method of producing silicon body
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
US4237150A (en) * 1979-04-18 1980-12-02 The United States Of America As Represented By The United States Department Of Energy Method of producing hydrogenated amorphous silicon film
US4237151A (en) * 1979-06-26 1980-12-02 The United States Of America As Represented By The United States Department Of Energy Thermal decomposition of silane to form hydrogenated amorphous Si film
JPS5767938A (en) * 1980-10-16 1982-04-24 Canon Inc Production of photoconductive member

Also Published As

Publication number Publication date
OA07249A (fr) 1984-08-31
IT1150674B (it) 1986-12-17
CA1187622A (en) 1985-05-21
HU187713B (en) 1986-02-28
IT8220100A0 (it) 1982-03-11
IN156594B (enrdf_load_html_response) 1985-09-14
ES8402462A1 (es) 1984-02-01
NO823744L (no) 1982-11-10
EP0075007A1 (en) 1983-03-30
KR910002764B1 (ko) 1991-05-04
WO1982003069A1 (en) 1982-09-16
JPS58500360A (ja) 1983-03-10
EP0075007A4 (en) 1984-06-05

Similar Documents

Publication Publication Date Title
IT8249249A0 (it) Procedimento per la fabbricazione di pannolini elasticizzati
AR226004A1 (es) Proceso para la fabricacion de etileno
ES529265A0 (es) Procedimiento para la fabricacion de derivados de la piperacina
ES528142A0 (es) Procedimiento para la obtencion de compuestos de hexapiranosa
ES528127A0 (es) Procedimiento para la fabricacion de compuestos fotoconductores.
ES510893A0 (es) Procedimiento para la fabricacion de semiconductores amorfos
ES542159A0 (es) Procedimiento para la fabricacion de tetrafluoruro de sili- cio
MX161648A (es) Procedimiento para la produccion de hidrogeno
MX7419E (es) Procedimiento para la preparacion de pss-asa
MX157607A (es) Procedimiento para la preparacion de ciclohexilamina
ES516760A0 (es) Procedimiento para la realizacion de la portezuela de un vehiculo
AR231288A1 (es) Procedimiento para la preparacion de 3-amido-n-/2-5-dimetilaminometil-furan-2-il-metiltio etil-benzamidas
ES537829A0 (es) Procedimiento para la obtencion de compuestos de eglina
ES528669A0 (es) Procedimiento para la fabricacion de espejos
MX162208A (es) Procedimiento para la fabricacion de caprolactona
ES527205A0 (es) Procedimiento para la produccion de compuestos poliazoicos
ES546519A0 (es) Procedimiento para la obtencion de oxazolidinonas trisusti- tuidas
AR227701A1 (es) Procedimiento para la produccion de alpha-haloalquilamidas
AR229374A1 (es) Procedimiento para la preparacion de 2-hidroximetil-3-hidroxi-6-(1-hidroxi-2-t-butilaminoetil)-piridina
AR229890A1 (es) Procedimiento para la preparacion de 1-carvona
ES545611A0 (es) Procedimiento para la fabricacion de nuevos compuestos cina-moicos
ES548189A0 (es) Procedimiento litografico para la fabricacion de dispositi- vos semiconductores
ES527260A0 (es) Procedimiento para la obtencion de compuestos de 2-heterociclil-tio-alquilo inferior-penem
AR231433A1 (es) Procedimiento para la fabricacion de etilaminas beta-ciclo-substituidas
AR240908A1 (es) Procedimiento para la fabricacion de 2-halogeno- resorcinol

Legal Events

Date Code Title Description
FD1A Patent lapsed

Effective date: 19981103