ES480925A1 - Un proceso para incorporar pistas de aluminio sobre un cuer-po semiconductor. - Google Patents
Un proceso para incorporar pistas de aluminio sobre un cuer-po semiconductor.Info
- Publication number
- ES480925A1 ES480925A1 ES480925A ES480925A ES480925A1 ES 480925 A1 ES480925 A1 ES 480925A1 ES 480925 A ES480925 A ES 480925A ES 480925 A ES480925 A ES 480925A ES 480925 A1 ES480925 A1 ES 480925A1
- Authority
- ES
- Spain
- Prior art keywords
- semiconductor bodies
- aluminum deposition
- aluminum
- semiconductor body
- routing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052782 aluminium Inorganic materials 0.000 title abstract 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 230000008021 deposition Effects 0.000 title 1
- 239000004020 conductor Substances 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- MCULRUJILOGHCJ-UHFFFAOYSA-N triisobutylaluminium Chemical compound CC(C)C[Al](CC(C)C)CC(C)C MCULRUJILOGHCJ-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
- C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
- C23C16/20—Deposition of aluminium only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Un proceso para incorporar pistas de aluminio sobre un cuerpo semiconductor, que incluye, la activación de la superficie del cuerpo en una descarga de hidrógeno, la deposición de aluminio sobre la superficie activada mediante descomposición térmica de aluminio tri- isobutilo (TIBA) suministrado en forma de vapor a una cámara de reacción mantenida a una temperatura en el margen de 250-270ºC y el ataque selectivo del aluminio para definir las pistas conductoras, y en dónde el TIBA, antes de entrar en la cámara de reacción, se mantiene a una temperatura por debajo de los 90º.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB22632/78A GB1595659A (en) | 1978-05-25 | 1978-05-25 | Providing conductive tracks on semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
ES480925A1 true ES480925A1 (es) | 1980-01-01 |
Family
ID=10182578
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES480925A Expired ES480925A1 (es) | 1978-05-25 | 1979-05-25 | Un proceso para incorporar pistas de aluminio sobre un cuer-po semiconductor. |
Country Status (6)
Country | Link |
---|---|
US (1) | US4460618A (es) |
JP (1) | JPS54154291A (es) |
ES (1) | ES480925A1 (es) |
FR (1) | FR2426745A1 (es) |
GB (1) | GB1595659A (es) |
IT (1) | IT1192728B (es) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5985857A (ja) * | 1982-11-08 | 1984-05-17 | Semiconductor Energy Lab Co Ltd | アルミニユ−ム被膜の作製方法 |
US4585672A (en) * | 1983-03-21 | 1986-04-29 | Syracuse University | Hydrogen charged thin film conductor |
JPS61245523A (ja) * | 1985-04-23 | 1986-10-31 | Fujitsu Ltd | アルミニウム膜の成長方法 |
DE3666230D1 (en) * | 1985-05-03 | 1989-11-16 | American Telephone & Telegraph | Method of making a device comprising a patterned aluminum layer |
JPS61272379A (ja) * | 1985-05-27 | 1986-12-02 | Fujitsu Ltd | アルミニウムのcvd方法 |
JPS6211227A (ja) * | 1985-07-09 | 1987-01-20 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2559703B2 (ja) * | 1986-04-11 | 1996-12-04 | 富士通株式会社 | 配線膜のエピタキシヤル成長方法 |
US4839715A (en) * | 1987-08-20 | 1989-06-13 | International Business Machines Corporation | Chip contacts without oxide discontinuities |
US4913789A (en) * | 1988-04-18 | 1990-04-03 | Aung David K | Sputter etching and coating process |
JP2721023B2 (ja) * | 1989-09-26 | 1998-03-04 | キヤノン株式会社 | 堆積膜形成法 |
JPH03114266A (ja) * | 1990-09-13 | 1991-05-15 | Semiconductor Energy Lab Co Ltd | アルミニューム被膜 |
US5149596A (en) * | 1990-10-05 | 1992-09-22 | The United States Of America As Represented By The United States Department Of Energy | Vapor deposition of thin films |
JPH04221822A (ja) * | 1990-12-21 | 1992-08-12 | Kazuo Tsubouchi | 堆積膜形成法 |
JP3048749B2 (ja) * | 1992-04-28 | 2000-06-05 | キヤノン株式会社 | 薄膜形成方法 |
US5995396A (en) * | 1997-12-16 | 1999-11-30 | Lucent Technologies Inc. | Hybrid standby power system, method of operation thereof and telecommunications installation employing the same |
US5985375A (en) * | 1998-09-03 | 1999-11-16 | Micron Technology, Inc. | Method for pulsed-plasma enhanced vapor deposition |
US8796851B2 (en) | 2012-01-05 | 2014-08-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bonding pad and method of making same |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2867546A (en) * | 1956-02-08 | 1959-01-06 | Ohio Commw Eng Co | Gas plating of aluminum using aluminum trilsobutyl |
US2921868A (en) * | 1956-06-07 | 1960-01-19 | Union Carbide Corp | Aluminum gas plating of various substrates |
DE1267054B (de) * | 1958-09-10 | 1968-04-25 | Union Carbide Corp | Gasplattierungsverfahren zur Erzeugung von Aluminiumueberzuegen |
US2990295A (en) * | 1958-11-07 | 1961-06-27 | Union Carbide Corp | Deposition of aluminum |
US2929739A (en) * | 1958-11-07 | 1960-03-22 | Union Carbide Corp | Aluminum plating |
US3041197A (en) * | 1959-06-01 | 1962-06-26 | Berger Carl | Coating surfaces with aluminum |
DE1235106B (de) * | 1960-02-29 | 1967-02-23 | Union Carbide Corp | Verfahren zur Gasplattierung von Aluminium auf erhitzte Gegenstaende |
US3188230A (en) * | 1961-03-16 | 1965-06-08 | Alloyd Corp | Vapor deposition process and device |
US3158499A (en) * | 1961-07-07 | 1964-11-24 | Union Carbide Corp | Method of depositing metal coatings in holes, tubes, cracks, fissures and the like |
US3282243A (en) * | 1965-09-08 | 1966-11-01 | Ethyl Corp | Movable means comprising vapor-plating nozzle and exhaust |
US3402067A (en) * | 1965-09-24 | 1968-09-17 | Engelhard Ind Inc | Method for depositing aluminum film |
US3615956A (en) * | 1969-03-27 | 1971-10-26 | Signetics Corp | Gas plasma vapor etching process |
BE758258A (fr) * | 1969-11-01 | 1971-04-01 | Sumitomo Chemical Co | Procede de depot d'aluminium |
GB1352619A (en) * | 1970-08-21 | 1974-05-08 | Motorola Inc | Thin film resistor |
DE2242875A1 (de) * | 1971-10-13 | 1973-04-19 | Ibm | Metallisierungs- und kontaktanordnung bei monolithischen halbleiteranordnungen und verfahren zu deren herstellung |
JPS4911540A (es) * | 1972-05-31 | 1974-02-01 | ||
JPS4911541A (es) * | 1972-06-01 | 1974-02-01 | ||
JPS5443872B2 (es) * | 1972-09-18 | 1979-12-22 | ||
DE2309506A1 (de) * | 1973-02-26 | 1974-08-29 | Siemens Ag | Verfahren zur herstellung von anschluss- und kontaktflaechen durch metallabscheidung aus der gasphase |
US3994793A (en) * | 1975-05-22 | 1976-11-30 | International Business Machines Corporation | Reactive ion etching of aluminum |
JPS5810988B2 (ja) * | 1975-05-23 | 1983-02-28 | 株式会社日立製作所 | キソウカガクハンノウホウシキ |
US4031274A (en) * | 1975-10-14 | 1977-06-21 | General Electric Company | Method for coating cavities with metal |
LU74666A1 (es) * | 1976-03-29 | 1977-10-10 |
-
1978
- 1978-05-25 GB GB22632/78A patent/GB1595659A/en not_active Expired
-
1979
- 1979-05-17 IT IT22733/79A patent/IT1192728B/it active
- 1979-05-25 ES ES480925A patent/ES480925A1/es not_active Expired
- 1979-05-25 JP JP6488479A patent/JPS54154291A/ja active Granted
- 1979-05-25 FR FR7913340A patent/FR2426745A1/fr active Granted
-
1981
- 1981-10-26 US US06/314,944 patent/US4460618A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
FR2426745A1 (fr) | 1979-12-21 |
FR2426745B1 (es) | 1983-08-26 |
GB1595659A (en) | 1981-08-12 |
IT1192728B (it) | 1988-05-04 |
US4460618A (en) | 1984-07-17 |
JPH0234166B2 (es) | 1990-08-01 |
IT7922733A0 (it) | 1979-05-17 |
JPS54154291A (en) | 1979-12-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FD1A | Patent lapsed |
Effective date: 19991007 |